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M29DW128F60ZA1T

STMicroelectronics

M29DW128F60ZA1T by STMicroelectronics

M29DW128F60ZA1T from STMicroelectronics is a 16-bit NOR Flash memory with a density of 128Mb, operating at 3V. It features asynchronous access with a max time of 60ns and supports parallel interface. Ideal for embedded applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,768 parts In-Stock

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3,768

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Vyrian

USA . 3,143 parts In-Stock

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3,143

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Anansix

USA . 1,831 parts In-Stock

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1,831

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,900 parts In-Stock

1+ parts

$2.378

100+ parts

-

1k+ parts

$2.140

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1,900

$2.378

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$2.140

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MKK Technologies

India . 713 parts In-Stock

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$4.472

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713

$4.472

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DigiPath Technology Company

USA . 713 parts In-Stock

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$4.472

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713

$4.472

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Corphita

USA . 2,949 parts In-Stock

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Parana Technologies

USA . 1,423 parts In-Stock

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$2.844

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1,423

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$2.844

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Overview

Unlock unparalleled performance with the M29DW128F60ZA1T flash memory from STMicroelectronics. Renowned for their innovation and reliability, STMicroelectronics delivers exceptional quality in every device. This versatile NOR flash memory is perfect for a wide range of applications, from automotive to consumer electronics. Experience faster data access and increased efficiency, empowering your designs with robust storage solutions that stand the test of time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable materials ensure longevity and protection against environmental factors.

Surface Mount: YES

Surface mount capability allows for compact designs and ease of integration in modern electronics.

Package Shape: RECTANGULAR

Rectangular shape optimizes board space and facilitates efficient layout in electronic assemblies.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances speed and responsiveness in data processing and memory access.

Nominal Supply Voltage / Vsup (V): 3

Standard supply voltage makes it compatible with a wide range of applications and systems.

Power Supplies (V): 3/3.3

Dual voltage support offers flexibility in powering the device, accommodating various system designs.

No. of Terminals: 64

A high number of terminals enables extensive connectivity options, enhancing device functionalities.

Package Style (Meter): GRID ARRAY, THIN PROFILE

Thin profile design supports space-constrained applications while maintaining performance.

Alternate Memory Width: 8

Alternative memory width allows for versatile configurations, improving performance for specific applications.

Maximum Operating Temperature: 70 °C

High temperature tolerance ensures reliability in demanding environments and extended temperature ranges.

Organization: 8MX16

Provides a significant amount of storage with a 16-bit data width, enhancing data handling capabilities.

Minimum Operating Temperature: 0 °C

Wide operating temperature range ensures functionality in various environmental conditions.

No. of Sectors/Size: 16,254

Large number of sectors enables efficient data management and better organization of stored information.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and design for ease of mounting.

Maximum Seated Height: 1.2 mm

Low seated height supports compact designs, ideal for space-constrained applications.

Width: 10 mm

Compact width allows for efficient use of board space in integrated electronics.

Minimum Supply Voltage (Vsup): 2.7 V

Minimum supply voltage provides compatibility with a wide range of devices, enhancing versatility.

Page Size (words): 8/16

Flexible page size options allow for optimization based on application requirements.

Maximum Time At Peak Reflow Temperature (s): 30

Designed to withstand rigorous soldering processes, ensuring reliability and durability.

Peak Reflow Temperature °C: 240

Compatibility with high-temperature reflow processes ensures robust soldering and assembly.

Type: NOR TYPE

NOR type memory offers fast random access, making it ideal for high-performance applications.

Common Flash Interface: YES

Standardized interface simplifies integration and interoperability with various systems.

Length: 13 mm

Compact length supports space-saving designs in modern electronic applications.

Programming Voltage (V): 3

Standard programming voltage ensures compatibility with various programming tools and systems.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliability in typical operational settings.

Technology: CMOS

CMOS technology provides low power consumption and high density, enhancing efficiency.

Parallel or Serial: PARALLEL

Parallel interface allows for faster data transfer rates, improving overall performance.

Terminal Form: BALL

Ball terminal form facilitates efficient heat dissipation and enhances electrical performance.

Sector Size (Words): 8K, 64K

Flexible sector sizes enhance the ability to tailor the memory for specific application needs.

Maximum Supply Current: 20 mA

Low maximum supply current aids in power efficiency, making it suitable for portable devices.

No. of Words: 8388608 words

Substantial storage capacity supports demanding applications and extensive data storage.

Toggle Bit: YES

Toggle bit improves error detection and memory reliability, ensuring data integrity.

Memory Width: 16

16-bit memory width enhances data throughput, optimizing performance for data-intensive tasks.

Terminal Pitch: 1 mm

1 mm terminal pitch allows for high-density designs, maximizing utilization of PCB space.

No. of Words Code: 8M

8M word capacity offers ample space for various applications, increasing versatility.

Command User Interface: YES

User-friendly command interface simplifies operations and enhances usability for developers.

Ready or Busy: YES

Ready/busy status indication assists in synchronizing operations, improving system reliability.

Maximum Supply Voltage (Vsup): 3.6 V

Compatible with higher supply voltages allows integration into a broader range of systems.

Boot Block: BOTTOM/TOP

Versatile boot block configuration enhances system boot performance and flexibility.

Memory Density: 134217728 bit

High memory density supports large-scale applications, providing significant data storage capacity.

Memory IC Type: FLASH

Flash memory offers the ability to retain data without power, ideal for non-volatile storage solutions.

Maximum Standby Current: 0.0001 Amp

Very low standby current aids in power conservation, promoting energy efficiency in battery-powered devices.

Maximum Access Time: 60 ns

Rapid access time enhances system responsiveness and speeds up data retrieval.

Data Polling: YES

Data polling capability enables efficient data management and error detection, improving resilience.

Technical Specifications

Flash Memory M29DW128F60ZA1T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

60 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PBGA-B64

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

240

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

YES

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M29DW128F60ZA1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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