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M29DW128F60ZA6F

STMicroelectronics

M29DW128F60ZA6F by STMicroelectronics

M29DW128F60ZA6F from STMicroelectronics is a 16-bit NOR Flash memory with a density of 128Mb, operating at 3V. It features asynchronous access with a max time of 60ns and supports industrial-grade temperatures from -40 °C to 85 °C. Ideal for embedded applications, it offers reliable data storage in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,545 parts In-Stock

1+ parts

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3,545

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Digiode

USA . 3,355 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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3,355

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Anansix

USA . 2,461 parts In-Stock

1+ parts

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100+ parts

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2,461

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 839 parts In-Stock

1+ parts

$2.881

100+ parts

-

1k+ parts

$2.593

10k+ parts

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839

$2.881

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$2.593

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MKK Technologies

India . 1,657 parts In-Stock

1+ parts

$5.418

100+ parts

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1,657

$5.418

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DigiPath Technology Company

USA . 1,657 parts In-Stock

1+ parts

$5.418

100+ parts

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1,657

$5.418

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Corphita

USA . 4,534 parts In-Stock

1+ parts

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4,534

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Parana Technologies

USA . 155 parts In-Stock

1+ parts

-

100+ parts

$3.445

1k+ parts

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155

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$3.445

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Overview

Elevate your designs with the M29DW128F60ZA6F Flash Memory from STMicroelectronics, a trusted leader in semiconductor innovation. With its robust performance in diverse applications—from industrial automation to telecommunications—this reliable memory solution enhances efficiency and reliability. Enjoy superior quality, low power consumption, and exceptional temperature resilience, ensuring your projects thrive in any environment. Unlock unparalleled value and peace of mind with STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The robust plastic/epoxy body material provides excellent protection against environmental factors, making it suitable for various industrial applications.

Surface Mount: YES

Surface mount technology allows for efficient use of space on printed circuit boards, which is essential for modern compact electronic designs.

Package Shape: RECTANGULAR

The rectangular package shape offers a standardized footprint that aids in easy integration into existing layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access without needing synchronized signals, improving performance in applications requiring quick read/write cycles.

Nominal Supply Voltage / Vsup: 3 V

A nominal voltage of 3V is convenient for compatibility with various systems while ensuring efficient power consumption.

Power Supplies (V): 3/3.3 V

Dual power supply options enhance flexibility for use in different systems, allowing for easier adaptation and reduced complexity.

No. of Terminals: 64

With 64 terminals, this chip can support complex data connections, ensuring high data throughput and improved performance.

Package Style (Meter): GRID ARRAY, THIN PROFILE

The thin profile grid array design enables space-saving implementations while maintaining effective thermal performance.

Alternate Memory Width: 8

An alternate memory width of 8 bits offers flexibility in data handling, catering to various application requirements.

Maximum Operating Temperature: 85 °C

Operating at high temperatures up to 85 °C ensures reliability in demanding environments, useful for industrial applications.

Organization: 8MX16

This organization format provides efficient data arrangements, optimizing performance and allowing for easy memory access.

Minimum Operating Temperature: -40 °C

The capability to operate at -40 °C ensures functionality in extreme conditions, making it suitable for harsh environments.

No. of Sectors/Size: 16,254

An ample number of sectors allows for flexible memory management and segmentation, making it efficient for various applications.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for device layouts, enabling optimal connectivity and space efficiency.

Maximum Seated Height: 1.2 mm

A low seated height allows for compact design options, making it ideal for modern electronics where space is a premium.

Width: 10 mm

A width of 10 mm ensures that the component can easily fit within standard PCB designs.

Minimum Supply Voltage (Vsup): 2.7 V

A lower voltage threshold of 2.7V ensures compatibility with a wider range of applications and power systems.

Page Size (words): 8/16

Flexible page sizes help optimize read and write operations based on application requirements, enhancing overall performance.

Maximum Time At Peak Reflow Temperature (s): 40

The ability to withstand a maximum of 40 seconds at peak reflow temperature ensures reliability during soldering processes.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C confirms compatibility with lead-free soldering processes, supporting modern manufacturing regulations.

Type: NOR TYPE

NOR flash memory allows for fast read operations and efficient random access, making it ideal for code storage applications.

Common Flash Interface: YES

A common flash interface provides compatibility with a wide range of systems, facilitating easier integration.

Length: 13 mm

A length of 13 mm allows for versatile placement on PCBs, ensuring it fits well within varying design constraints.

Programming Voltage (V): 3

A programming voltage of 3V offers a balance of performance and efficiency, reducing power consumption during write operations.

Temperature Grade: INDUSTRIAL

Industrial grade specifications ensure that the memory device is designed for reliability under challenging conditions.

Technology: CMOS

CMOS technology supports low power consumption and high-speed operation, optimizing performance in battery-powered devices.

Parallel or Serial: PARALLEL

Parallel access enables faster data transfer rates, improving performance for applications demanding high throughput.

Terminal Form: BALL

Ball terminals facilitate effective thermal management and seamless integration with PCB designs.

Sector Size (Words): 8K, 64K

Diverse sector sizes allow for optimized memory allocations based on varying application needs, enhancing efficiency.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA allows for efficient power management, contributing to longer device lifespans.

No. of Words: 8388608 words

With a substantial word count of over 8 million, this flash memory provides ample storage for large data requirements.

Toggle Bit: YES

The toggle bit feature streamlines error detection, enhancing data integrity and reliability during operation.

Memory Width: 16

A memory width of 16 bits allows for efficient data handling, optimizing operations in 16-bit architectures.

Terminal Pitch: 1 mm

A 1 mm terminal pitch ensures compatibility with standard PCB designs while allowing for high-density packaging.

No. of Words Code: 8M

An 8M words code enhances data storage capacity, making it suitable for applications that require significant memory.

Command User Interface: YES

A command user interface simplifies memory management, making it user-friendly for developers.

Ready or Busy: YES

The ready/busy signal provides real-time status updates, improving control and efficiency during data operations.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V ensures stability and flexibility for various applications while maintaining high performance.

Boot Block: BOTTOM/TOP

Flexible boot block positioning allows for versatile application development, accommodating different initialization requirements.

Memory Density: 134217728 bit

Having a memory density of 134,217,728 bits ensures substantial data storage, making it ideal for data-intensive applications.

Memory IC Type: FLASH

As a flash memory IC, it offers non-volatile data storage, retaining information even without power.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current optimizes power efficiency, extending battery life in portable devices.

Maximum Access Time: 60 ns

With a maximum access time of 60 ns, this flash memory provides quick data retrieval, essential for performance-centric applications.

Data Polling: YES

Data polling capability enhances operational efficiency by allowing developers to check memory status without delay.

Technical Specifications

Flash Memory M29DW128F60ZA6F attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

60 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PBGA-B64

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M29DW128F60ZA6F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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