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M29DW128F70NF1E

STMicroelectronics

M29DW128F70NF1E by STMicroelectronics

M29DW128F70NF1E from STMicroelectronics is a 128Mb NOR Flash memory with a 3V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports parallel interface and comes in a compact SOIC package. Ideal for embedded applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,114 parts In-Stock

1+ parts

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5,114

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Digiode

USA . 3,788 parts In-Stock

1+ parts

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3,788

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Anansix

USA . 2,156 parts In-Stock

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2,156

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,979 parts In-Stock

1+ parts

$3.284

100+ parts

-

1k+ parts

$2.956

10k+ parts

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1,979

$3.284

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$2.956

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MKK Technologies

India . 1,045 parts In-Stock

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$6.176

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1,045

$6.176

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DigiPath Technology Company

USA . 1,045 parts In-Stock

1+ parts

$6.176

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1,045

$6.176

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Corphita

USA . 3,738 parts In-Stock

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3,738

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Parana Technologies

USA . 479 parts In-Stock

1+ parts

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$3.927

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479

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$3.927

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Overview

Unlock the potential of your designs with the M29DW128F70NF1E from STMicroelectronics, a leader in reliable and innovative flash memory solutions. This high-quality NOR type flash memory offers exceptional performance with its compact form factor, making it perfect for a variety of applications including consumer electronics, automotive systems, and industrial controls. Experience superior efficiency, lower power consumption, and seamless integration—empowering your projects to reach new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection, making this flash memory suitable for various applications.

Surface Mount: YES

Surface mount technology enables efficient PCB design and helps reduce the overall size of the device.

Package Shape: RECTANGULAR

The rectangular shape optimizes space on the PCB, allowing for denser circuit layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for faster data access times, improving performance in applications.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V contributes to lower power consumption and heat generation.

Power Supplies (V): 3/3.3

The flexibility in supply voltage ensures compatibility with a wide range of systems and components.

No. of Terminals: 56

Having 56 terminals allows extensive connectivity options, supporting various configurations.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline and thin profile makes it ideal for compact electronic devices where space is at a premium.

Alternate Memory Width: 8

An alternate memory width enhances flexibility in various applications, accommodating different data sizes.

Maximum Operating Temperature: 70 °C

Rated for high operating temperatures, this memory can function reliably in demanding environments.

Organization: 8MX16

The 8MX16 configuration offers a balance of capacity and performance for memory-intensive applications.

Minimum Operating Temperature: 0 °C

With a minimum operating temperature of 0 °C, this device can function in moderate cold environments.

No. of Sectors/Size: 16,254

A high number of sectors allows for efficient data management and better error handling.

Terminal Finish: MATTE TIN/TIN BISMUTH

The matte tin/tin bismuth finish enhances solderability and provides good corrosion resistance.

Terminal Position: DUAL

Dual terminal position offers design flexibility and compatibility with various PCB layouts.

Maximum Seated Height: 1.2 mm

The compact height allows for slim designs in portable electronics without compromising performance.

Width: 14 mm

With a width of 14 mm, this memory fits well in narrow spaces typical in modern electronics.

Minimum Supply Voltage (Vsup): 2.7 V

The minimum supply voltage of 2.7V allows operation in systems with lower power requirements.

Page Size (words): 8/16

The ability to handle different page sizes increases efficiency for various read/write operations.

Maximum Time At Peak Reflow Temperature (s): 40

The high tolerance to reflow temperatures reflects reliability during assembly processes.

Peak Reflow Temperature °C: 260

Withstand high peak temperatures ensures compatibility with industrial manufacturing processes.

Type: NOR TYPE

NOR type provides fast random access and flexibility, making it ideal for code storage and execution.

Common Flash Interface: YES

The common flash interface guarantees integration into a wide variety of systems and components.

Length: 18.4 mm

A balanced length allows for versatile placement in electronic designs without hindrance.

Programming Voltage (V): 3

Operating at 3V for programming simplifies design considerations in low-voltage applications.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures reliability in a wide range of applications, ideal for consumer electronics.

Technology: CMOS

CMOS technology enhances efficiency, power consumption, and scalability of the memory.

Parallel or Serial: PARALLEL

Parallel operation supports higher data transfer rates, boosting overall system performance.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and ensure a stable mechanical connection.

Sector Size (Words): 8K, 64K

Flexible sector sizes optimize space for applications requiring varied memory organization.

Maximum Supply Current: 20 mA

Low current consumption of 20 mA promotes energy efficiency in portable applications.

No. of Words: 8388608 words

The substantial word count allows for significant data storage, perfect for applications needing high capacity.

Toggle Bit: YES

Support for toggle bit enhances error detection and correction capabilities.

Memory Width: 16

A 16-bit memory width ensures optimal data throughput for a variety of applications.

Terminal Pitch: 0.5 mm

Close terminal pitch is ideal for high-density designs, maximizing PCB real estate.

No. of Words Code: 8M

The 8M word code indicates substantial storage capability, ideal for complex applications.

Command User Interface: YES

A user-friendly command interface simplifies integration into systems and expedites development.

Ready or Busy: YES

Ready or busy signals facilitate effective communication with the system, enhancing operation management.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V ensures compatibility across a range of electronic devices.

Boot Block: BOTTOM/TOP

Bottom/top boot block configuration allows for greater flexibility in firmware storage and system design.

Memory Density: 134217728 bit

A high memory density delivers ample storage for extensive data applications, increasing efficiency.

Memory IC Type: FLASH

As a flash memory IC, it offers non-volatility and high-speed read/write capabilities.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current enhances energy efficiency, ideal for battery-operated devices.

Maximum Access Time: 70 ns

Fast access time ensures speedy data retrieval, enhancing overall system responsiveness.

Data Polling: YES

Data polling capability allows for efficient monitoring of memory operations, improving system control.

Technical Specifications

Flash Memory M29DW128F70NF1E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

M29DW128F70NF1E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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