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M29DW128F70NF1T

STMicroelectronics

M29DW128F70NF1T by STMicroelectronics

M29DW128F70NF1T from STMicroelectronics is a 16-bit NOR flash memory with a density of 128Mb, operating at 3V. It features asynchronous access with a max speed of 70ns and supports parallel interface. Ideal for embedded applications requiring reliable data storage in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,212 parts In-Stock

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4,212

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Vyrian

USA . 3,840 parts In-Stock

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3,840

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Anansix

USA . 637 parts In-Stock

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637

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 185 parts In-Stock

1+ parts

$4.377

100+ parts

-

1k+ parts

$3.940

10k+ parts

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185

$4.377

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$3.940

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MKK Technologies

India . 670 parts In-Stock

1+ parts

$8.231

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670

$8.231

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DigiPath Technology Company

USA . 670 parts In-Stock

1+ parts

$8.231

100+ parts

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670

$8.231

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Corphita

USA . 1,965 parts In-Stock

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1,965

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Parana Technologies

USA . 1,485 parts In-Stock

1+ parts

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$5.234

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1,485

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$5.234

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Overview

Unlock the power of innovation with the M29DW128F70NF1T Flash Memory by STMicroelectronics, a trusted leader in semiconductor solutions. Designed for reliability and efficiency, this high-performance memory excels in various applications, from consumer electronics to automotive systems. Enjoy fast data access, low power consumption, and seamless integration into your projects, elevating your designs with unmatched quality and longevity that only STMicroelectronics can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliable performance and protection against environmental factors.

Surface Mount: YES

Surface mount capability allows for compact PCB designs, saving space and improving manufacturability.

Package Shape: RECTANGULAR

The rectangular shape is optimal for fitting into tight spaces on circuit boards, enhancing design flexibility.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables faster access times, improving overall system performance.

Nominal Supply Voltage / Vsup: 3 V

A nominal voltage of 3 V is widely compatible with various systems, making it versatile for different applications.

Power Supplies (V): 3/3.3 V

Supports 3 V and 3.3 V supply options, ensuring compatibility with a range of electronic devices.

No. of Terminals: 56

A higher number of terminals facilitates better connectivity and integration in complex electronic systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline, thin profile design helps in saving board space and supports modern compact device designs.

Alternate Memory Width: 8

The 8-bit width option allows for efficient data handling in applications where smaller data paths are sufficient.

Maximum Operating Temperature: 70 °C

A high maximum operating temperature ensures reliability in warmer environments, suitable for various applications.

Organization: 8MX16

The 8MX16 organization provides a balanced architecture for efficient data access and storage.

Minimum Operating Temperature: 0 °C

Supported operation from 0 °C allows for functionality in typical indoor environments.

No. of Sectors/Size: 16,254

A large number of sectors enables efficient data management and organization within the memory.

Terminal Finish: TIN LEAD

Tin-lead finish enhances solderability, ensuring reliable connections on circuit boards.

Terminal Position: DUAL

Dual terminal positioning provides increased design flexibility for various PCB layouts.

Maximum Seated Height: 1.2 mm

Low seated height contributes to better clearance and fit in compact designs.

Width: 14 mm

A compact width allows for efficient use of space on circuit boards.

Minimum Supply Voltage (Vsup): 2.7 V

The capability to function down to 2.7 V extends its usability in battery-operated devices.

Page Size (words): 8/16

Flexible page sizes enhance the efficiency of read and write operations, tailoring to specific application needs.

Type: NOR TYPE

NOR type memory provides fast random access for high-performance applications.

Common Flash Interface: YES

Compatibility with a common flash interface simplifies integration with existing systems.

Length: 18.4 mm

The ideal length allows it to fit neatly into a range of compact designs.

Programming Voltage (V): 3 V

Standard programming voltage optimizes compatibility with popular programming environments.

Temperature Grade: COMMERCIAL

Commercial temperature grading ensures the memory operates reliably in a wide range of environments.

Technology: CMOS

CMOS technology provides low power consumption and high performance, ideal for energy-sensitive applications.

Parallel or Serial: PARALLEL

Parallel access configuration supports faster data transfer speeds, significantly improving system performance.

Terminal Form: GULL WING

Gull wing terminals improve the reliability of solder joints and are easier to inspect in manufacturing.

Sector Size (Words): 8K, 64K

Flexible sector sizes provide options for optimized memory usage in different applications.

Maximum Supply Current: 20 mA

Low maximum supply current ensures minimal power draw, which is important for battery-operated devices.

No. of Words: 8388608 words

With over 8 million words, this memory offers ample storage for a wide range of applications.

Toggle Bit: YES

The toggle bit feature enhances data integrity and improves error checking during operations.

Memory Width: 16

The 16-bit memory width provides high data throughput, ideal for high-performance applications.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch supports more terminals on a smaller chip, facilitating complex designs.

No. of Words Code: 8M

A coding capacity of 8M words offers versatility for various programming tasks.

Command User Interface: YES

A user-friendly command interface simplifies the integration process and reduces development time.

Ready or Busy: YES

The capability to signal readiness enhances synchronization in data systems, improving overall reliability.

Maximum Supply Voltage (Vsup): 3.6 V

The high maximum voltage tolerance allows for flexibility in power supply choices.

Boot Block: BOTTOM/TOP

Flexible boot block positioning enhances compatibility with various system architectures.

Memory Density: 134217728 bit

High memory density maximizes storage capacity, meeting the demands of modern applications.

Memory IC Type: FLASH

Flash memory type ensures non-volatility, preserving data even when power is lost.

Maximum Standby Current: 0.0001 Amp

Ultra-low standby current enhances battery life in portable devices.

Maximum Access Time: 70 ns

Fast access time improves data retrieval speed, crucial for high-performance applications.

Data Polling: YES

Data polling mechanism facilitates efficient status checking during read/write operations, enhancing performance.

Technical Specifications

Flash Memory M29DW128F70NF1T attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

M29DW128F70NF1T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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