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M29DW128F60NF1E

STMicroelectronics

M29DW128F60NF1E by STMicroelectronics

M29DW128F60NF1E from STMicroelectronics is a 16-bit NOR Flash memory with a density of 128Mb, operating at 3V. It features asynchronous access with a max time of 60ns and supports parallel interface, ideal for embedded applications. Its compact SOIC package ensures efficient space utilization in designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 5,989 parts In-Stock

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5,989

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Vyrian

USA . 4,743 parts In-Stock

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4,743

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Anansix

USA . 456 parts In-Stock

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456

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,182 parts In-Stock

1+ parts

$4.830

100+ parts

-

1k+ parts

$4.347

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1,182

$4.830

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$4.347

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MKK Technologies

India . 265 parts In-Stock

1+ parts

$9.082

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265

$9.082

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DigiPath Technology Company

USA . 265 parts In-Stock

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$9.082

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265

$9.082

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Corphita

USA . 5,908 parts In-Stock

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5,908

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Parana Technologies

USA . 249 parts In-Stock

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$5.775

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249

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$5.775

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Overview

Unlock the power of innovation with the M29DW128F60NF1E from STMicroelectronics! This cutting-edge flash memory solution combines high performance and reliability, perfect for a range of applications—from consumer electronics to automotive systems. With a compact design and efficient operation, it ensures seamless integration into your projects, enhancing functionality while optimizing space. Trust in STMicroelectronics' legacy of excellence to elevate your designs and drive success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for efficient space-saving designs and automated manufacturing processes.

Package Shape: RECTANGULAR

Rectangular package shapes contribute to a compact layout and easy integration into circuit boards.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides faster read access times, enhancing overall system performance.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V ensures compatibility with a wide range of devices while maintaining energy efficiency.

Power Supplies (V): 3/3.3

Supports both 3V and 3.3V, making it versatile for different electronic applications.

No. of Terminals: 56

A higher number of terminals allows for more complex interconnections and improved functionality.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline, thin-profile design is perfect for space-constrained applications without sacrificing performance.

Alternate Memory Width: 8

An 8-bit memory width contributes to efficient data handling, suitable for various application requirements.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70 °C, the flash memory can function effectively in moderate operating conditions.

Organization: 8MX16

The 8MX16 organization provides a balanced architecture for data storage and accessibility, optimizing performance.

Minimum Operating Temperature: 0 °C

Operational down to 0 °C ensures usability in a variety of environments, including cooler climates.

No. of Sectors/Size: 16,254

A large number of sectors enables efficient data management and organization, essential for complex applications.

Terminal Finish: MATTE TIN/TIN BISMUTH

The terminal finish enhances solderability and ensures a reliable electrical connection for improved longevity.

Terminal Position: DUAL

Dual terminal positioning enhances connectivity options, making integration into PCBs easier.

Maximum Seated Height: 1.2 mm

A low seated height of 1.2 mm contributes to a compact design, facilitating the use of this memory in miniaturized applications.

Width: 14 mm

A width of 14 mm allows for efficient space utilization on the circuit board.

Minimum Supply Voltage (Vsup): 2.7 V

A minimum supply voltage of 2.7V ensures flexibility in power supply options, accommodating a wide range of devices.

Page Size (words): 8/16

A choice of page sizes enhances flexibility in data writing and reading operations, catering to various application needs.

Maximum Time At Peak Reflow Temperature (s): 40

Supporting a maximum reflow time of 40 seconds ensures compatibility with commonly used soldering processes.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures of up to 260 °C ensures reliability during mounting processes.

Type: NOR TYPE

As a NOR type flash memory, it offers fast random access for read operations, ideal for executing code in place.

Common Flash Interface: YES

Support for a common flash interface makes integration straightforward and facilitates compatibility with multiple devices.

Length: 18.4 mm

A length of 18.4 mm optimizes space efficiency on the PCB while still delivering robust functionality.

Programming Voltage (V): 3

The programming voltage of 3V allows for ease of integration into low-voltage systems.

Temperature Grade: COMMERCIAL

Being rated for commercial temperature ranges makes this product suitable for a variety of everyday applications.

Technology: CMOS

CMOS technology ensures low power consumption and high density, contributing to efficient performance.

Parallel or Serial: PARALLEL

Parallel access allows for faster data transfer rates, ideal for applications requiring high-speed data retrieval.

Terminal Form: GULL WING

Gull wing terminals provide excellent surface mountability and ease of soldering.

Sector Size (Words): 8K,64K

Configurable sector sizes of 8K and 64K make it adaptable to various data storage requirements.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA keeps power requirements low, making it efficient for battery-operated devices.

No. of Words: 8388608 words

With a capacity of 8,388,608 words, this flash memory provides ample storage for a wide range of applications.

Toggle Bit: YES

Support for a toggle bit mechanism enhances the efficiency of read and write operations.

Memory Width: 16

A memory width of 16 indicates a broader data path, allowing for faster data transfers.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm facilitates densely packed designs while maintaining electrical integrity.

No. of Words Code: 8M

With an 8M word code, this memory is suitable for larger applications needing significant storage capabilities.

Command User Interface: YES

A command user interface simplifies the programming and control of the flash memory.

Ready or Busy: YES

Indication of ready or busy status helps in managing data operations more efficiently.

Maximum Supply Voltage (Vsup): 3.6 V

Supports a maximum supply voltage of 3.6V, ensuring stability and performance under various conditions.

Boot Block: BOTTOM/TOP

Configurable boot block supports various architectures for initializing programs effectively.

Memory Density: 134217728 bit

With a memory density of 134,217,728 bits, this flash memory can store large files and data sets.

Memory IC Type: FLASH

As a flash memory IC, it provides non-volatile storage, retaining data even in the absence of power.

Maximum Standby Current: 0.0001 Amp

A maximum standby current of only 0.0001 A contributes to energy efficiency, ideal for power-sensitive applications.

Maximum Access Time: 60 ns

A maximum access time of 60 ns ensures rapid data retrieval, enhancing performance in applications that require quick access.

Data Polling: YES

Data polling capability allows for efficient monitoring of data processing states, providing reliability during operations.

Technical Specifications

Flash Memory M29DW128F60NF1E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

60 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

M29DW128F60NF1E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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