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M29DW128F60ZA1E

STMicroelectronics

M29DW128F60ZA1E by STMicroelectronics

M29DW128F60ZA1E from STMicroelectronics is a 128Mb NOR Flash memory with a 3V supply, featuring asynchronous operation and a max access time of 60 ns. It supports parallel interface and operates in temperatures from 0 °C to 70 °C. Ideal for embedded applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,756 parts In-Stock

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2,756

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Digiode

USA . 2,615 parts In-Stock

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2,615

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Anansix

USA . 1,476 parts In-Stock

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1,476

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,992 parts In-Stock

1+ parts

$5.339

100+ parts

-

1k+ parts

$4.805

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1,992

$5.339

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$4.805

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MKK Technologies

India . 2,240 parts In-Stock

1+ parts

$10.039

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2,240

$10.039

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DigiPath Technology Company

USA . 2,240 parts In-Stock

1+ parts

$10.039

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2,240

$10.039

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Parana Technologies

USA . 1,772 parts In-Stock

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$6.383

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1,772

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$6.383

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Corphita

USA . 978 parts In-Stock

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978

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Overview

Unlock the potential of your designs with the M29DW128F60ZA1E Flash Memory from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers this high-performance memory solution perfect for embedded systems, automotive applications, and consumer electronics. With its compact design and robust reliability, enjoy faster data access and seamless integration, ensuring your projects stand out in today’s competitive market. Elevate your technology with a trusted partner!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material enhances reliability and protection against environmental factors.

Surface Mount: YES

Surface mount technology allows for compact design and efficient use of PCB space.

Package Shape: RECTANGULAR

A rectangular package shape optimizes layout and integration into various electronic designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides fast data access without needing synchronized clock signals.

Nominal Supply Voltage / Vsup (V): 3

The nominal supply voltage ensures compatibility with a wide range of devices and systems.

Power Supplies (V): 3/3.3

Flexible power supply options enhance adaptability across multiple applications.

No. of Terminals: 64

A higher number of terminals facilitate greater connectivity and functionality.

Package Style (Meter): GRID ARRAY, THIN PROFILE

A thin grid array enables a compact footprint, ideal for space-constrained applications.

Alternate Memory Width: 8

The alternate memory width provides versatility for various memory allocation needs.

Maximum Operating Temperature: 70 °C

This higher operating temperature rating ensures reliability in warmer environments.

Organization: 8MX16

The 8MX16 organization offers a balance of capacity and performance for data storage.

Minimum Operating Temperature: 0 °C

Operation from 0 °C guarantees functionality in standard ambient conditions.

No. of Sectors/Size: 16,254

A high number of sectors increases the efficiency and organization of data storage.

Terminal Position: BOTTOM

Bottom terminal positioning aids in effective mounting on PCBs.

Maximum Seated Height: 1.2 mm

A low seated height minimizes the profile while promoting space-saving designs.

Width: 10 mm

An optimal width of 10 mm provides a balanced footprint for integration.

Minimum Supply Voltage (Vsup): 2.7 V

The low minimum supply voltage broadens the range of applications this product suits.

Page Size (words): 8/16

Flexible page sizes enhance data management and throughput in memory operation.

Maximum Time At Peak Reflow Temperature (s): 40

A reasonable reflow time ensures quality soldering without damaging the component.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerances allow compatibility with advanced soldering techniques.

Type: NOR TYPE

NOR type memory offers the benefit of random access and efficient read operations.

Common Flash Interface: YES

A standard interface simplifies integration into existing systems and accelerates design cycles.

Length: 13 mm

This compact length makes the product suitable for small form factor applications.

Programming Voltage (V): 3

Consistent programming voltage supports reliable writing and erasing of memory.

Temperature Grade: COMMERCIAL

Designed for commercial use, offering reliability in regular operating conditions.

Technology: CMOS

CMOS technology provides low power consumption and enhanced performance.

Parallel or Serial: PARALLEL

Parallel processing allows for faster read/write operations, enhancing overall performance.

Terminal Form: BALL

Ball terminal form factors improve connection reliability and facilitate soldering.

Sector Size (Words): 8K, 64K

Multiple sector sizes allow for flexible data storage strategies depending on application needs.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA ensures efficiency while maintaining performance.

No. of Words: 8388608 words

This high word count translates to significant storage capacity for applications.

Toggle Bit: YES

Toggle bit functionality aids in efficient data retrieval and management processes.

Memory Width: 16

A wider memory interface enables faster data transfer rates for demanding applications.

Terminal Pitch: 1 mm

A 1 mm terminal pitch is compatible with a variety of PCB layouts and designs.

No. of Words Code: 8M

An 8M word code designation indicates substantial data storage capacity.

Command User Interface: YES

User-friendly command interface simplifies memory access and control for developers.

Ready or Busy: YES

Ready or busy functionality enhances control over memory operation states.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum voltage of 3.6 V allows compatibility with a wide array of electronic systems.

Boot Block: BOTTOM/TOP

Flexible boot block configuration aids in optimal memory management and performance.

Memory Density: 134217728 bit

High memory density supports extensive data storage for various applications.

Memory IC Type: FLASH

As a FLASH memory type, this product supports rapid erasure and reprogramming.

Maximum Standby Current: 0.0001 Amp

Ultra-low standby current consumption enhances energy efficiency in idle states.

Maximum Access Time: 60 ns

Fast access time results in improved data retrieval speeds in high-performance scenarios.

Data Polling: YES

Data polling capability further enhances data management, providing status feedback during operations.

Technical Specifications

Flash Memory M29DW128F60ZA1E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

60 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PBGA-B64

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M29DW128F60ZA1E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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