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M29DW128F70NF1

STMicroelectronics

M29DW128F70NF1 by STMicroelectronics

M29DW128F70NF1 from STMicroelectronics is a 16-bit NOR flash memory with a density of 128Mb, operating at 3V. It features asynchronous access with a max speed of 70 ns and supports parallel interface. Ideal for embedded applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 6,756 parts In-Stock

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6,756

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Anansix

USA . 2,604 parts In-Stock

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2,604

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Vyrian

USA . 2,088 parts In-Stock

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2,088

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 894 parts In-Stock

1+ parts

$5.375

100+ parts

-

1k+ parts

$4.837

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894

$5.375

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$4.837

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MKK Technologies

India . 1,488 parts In-Stock

1+ parts

$10.107

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1,488

$10.107

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DigiPath Technology Company

USA . 1,488 parts In-Stock

1+ parts

$10.107

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1,488

$10.107

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Corphita

USA . 598 parts In-Stock

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598

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Parana Technologies

USA . 287 parts In-Stock

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$6.426

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287

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$6.426

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Overview

Unlock unparalleled performance with the M29DW128F70NF1 Flash Memory from STMicroelectronics, a leader in innovative semiconductor solutions. Engineered for reliability and efficiency, this compact memory device delivers optimal storage for diverse applications, from consumer electronics to industrial systems. Experience enhanced data integrity and reduced power consumption, ensuring your projects thrive in demanding environments. Choose STMicroelectronics for quality you can trust!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and reliable material choice, ensuring long-lasting performance in various environments.

Surface Mount: YES

Allows for efficient use of PCB space and enhances soldering reliability.

Package Shape: RECTANGULAR

Standard shape facilitates easy integration into existing designs and layouts.

Operating Mode: ASYNCHRONOUS

Enables faster data access compared to synchronous memory, making it suitable for high-speed applications.

Nominal Supply Voltage / Vsup: 3 V

Lowest operating voltage reduces power consumption, ideal for battery-operated devices.

Power Supplies (V): 3/3.3 V

Versatile voltage range allows compatibility with a variety of systems and designs.

No. of Terminals: 56

Provides sufficient connections for various functionalities and better data handling capabilities.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Compact design is perfect for space-constrained applications, ensuring versatility in product design.

Alternate Memory Width: 8

Offers flexibility in data handling width, enhancing compatibility across different platforms.

Maximum Operating Temperature: 70 °C

High-temperature tolerance ensures reliable operation in demanding environments.

Organization: 8MX16

Efficient organization structure maximizes memory usage and optimizes overall performance.

Minimum Operating Temperature: 0 °C

Usable in a wider range of environments, enhancing the applicability of the product.

No. of Sectors/Size: 16,254

Large sector count allows for more versatile data management and storage segmentation.

Terminal Finish: TIN LEAD

Provides excellent solderability and reliability, ensuring long-term performance.

Terminal Position: DUAL

Optimizes board space and ensures stable electrical connection.

Maximum Seated Height: 1.2 mm

Low height profile means better fit in compact designs, improving overall product aesthetics.

Width: 14 mm

Compact width aids in fitting into various applications without compromising performance.

Minimum Supply Voltage (Vsup): 2.7 V

Lower voltage requirement expands compatibility with various power supply designs.

Page Size (words): 8/16

Flexibility in page size allows for efficient data management according to application needs.

Type: NOR TYPE

Optimal for random access applications, ensuring quick read speeds and data integrity.

Common Flash Interface: YES

Standard interface enhances compatibility with a variety of systems and easy integration.

Length: 18.4 mm

Compact length makes this product suitable for designs requiring minimal physical footprint.

Programming Voltage (V): 3

Standard voltage simplifies design considerations and ensures compatibility with existing systems.

Temperature Grade: COMMERCIAL

Commercial temperature grade makes it suitable for a wide array of everyday applications.

Technology: CMOS

CMOS technology ensures lower power consumption and higher density, making the product efficient.

Parallel or Serial: PARALLEL

Parallel architecture provides faster data transfer rates, improving performance in high-demand applications.

Terminal Form: GULL WING

Gull wing terminals provide better mechanical strength and easier soldering in automated processes.

Sector Size (Words): 8K, 64K

Diverse sector sizes allow for tailored storage solutions, accommodating various application needs.

Maximum Supply Current: 20 mA

Low supply current minimizes power requirements, making it suitable for energy-efficient designs.

No. of Words: 8,388,608 words

Large memory capacity ensures extensive data storage and supports complex applications.

Toggle Bit: YES

Toggle bit functionality improves the reliability of data operations and access control.

Memory Width: 16

Wider memory width allows for faster data transactions and increased data throughput.

Terminal Pitch: 0.5 mm

Fine pitch provides more connections without increasing the overall footprint on the PCB.

No. of Words Code: 8M

Indicates vast storage potential, optimal for memory-intensive applications.

Command User Interface: YES

User-friendly interface simplifies programming and enhances developer accessibility.

Ready or Busy: YES

Ability to indicate the state improves data transfer reliability and efficiency in operations.

Maximum Supply Voltage (Vsup): 3.6 V

Provides a safe operational limit, enhancing reliability and safety in power management.

Boot Block: BOTTOM/TOP

Versatile boot block configuration allows for flexible firmware management and booting processes.

Memory Density: 134,217,728 bit

High memory density supports extensive data storage, catering to modern application requirements.

Memory IC Type: FLASH

Flash memory type allows for non-volatile storage, ideal for long-term data retention.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current makes it suitable for power-sensitive applications.

Maximum Access Time: 70 ns

Quick access time enhances performance in application environments requiring rapid data retrieval.

Data Polling: YES

Data polling capability allows for confirming data operations, ensuring data reliability.

Technical Specifications

Flash Memory M29DW128F70NF1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

M29DW128F70NF1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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