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M29DW128F60NF1F

STMicroelectronics

M29DW128F60NF1F by STMicroelectronics

M29DW128F60NF1F from STMicroelectronics is a 128Mb NOR Flash memory with a 3V supply, featuring an asynchronous operating mode and a max access time of 60 ns. It comes in a compact SOIC package, ideal for embedded applications. With 8M words organized in 16 sectors, it supports efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,916 parts In-Stock

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5,916

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Digiode

USA . 1,731 parts In-Stock

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1,731

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Anansix

USA . 644 parts In-Stock

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644

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,364 parts In-Stock

1+ parts

$2.132

100+ parts

-

1k+ parts

$1.918

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2,364

$2.132

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$1.918

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MKK Technologies

India . 1,834 parts In-Stock

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$4.008

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$4.008

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DigiPath Technology Company

USA . 1,834 parts In-Stock

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$4.008

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1,834

$4.008

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Parana Technologies

USA . 2,237 parts In-Stock

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$2.549

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2,237

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$2.549

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Corphita

USA . 1,488 parts In-Stock

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1,488

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Overview

Unlock unparalleled performance with the M29DW128F60NF1F flash memory from STMicroelectronics. Renowned for its quality and reliability, STMicroelectronics ensures top-notch manufacturing standards that you can trust. Ideal for a range of applications, this versatile NOR flash brings speed and efficiency to your designs, enhancing data storage solutions while optimizing power consumption. Elevate your project with technology that delivers lasting value and superior benefits!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material enhances durability and reduces weight, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for reduced PCB space and better performance in high-density designs.

Package Shape: RECTANGULAR

The rectangular shape is optimal for fitting into smaller electronic devices, providing versatility in packaging.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for quicker data access and improved overall performance in memory-intensive tasks.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V is standard for many low-power applications, ensuring compatibility with a wide range of devices.

Power Supplies (V): 3/3.3

Compatible with multiple power supply voltages supports diverse applications, ensuring flexibility in design.

No. of Terminals: 56

A generous number of terminals facilitates complex connectivity and robust data transfer capabilities.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The thin profile allows for integration into space-constrained designs while maintaining high performance.

Alternate Memory Width: 8

This feature supports various data transfer widths, enhancing compatibility with different systems.

Maximum Operating Temperature: 70 °C

Operating at a maximum temperature of 70 °C makes it suitable for most commercial environments and applications.

Organization: 8MX16

This organization ensures efficient data storage and retrieval, improving system performance.

Minimum Operating Temperature: 0 °C

A minimum temperature of 0 °C ensures reliable operation in mild environmental conditions.

No. of Sectors/Size: 16,254

A large number of sectors provides flexibility for complex data storage requirements in various applications.

Terminal Finish: MATTE TIN/TIN BISMUTH

Matte tin and tin bismuth finishes improve solderability and reliability in electronic connections.

Terminal Position: DUAL

Dual terminal positioning enhances ease of mounting and can improve electrical performance.

Maximum Seated Height: 1.2 mm

A low seated height allows for compact design while providing excellent performance.

Width: 14 mm

Compact width makes it easier to fit into densely packed circuit boards without sacrificing performance.

Minimum Supply Voltage (Vsup): 2.7 V

A low minimum supply voltage supports battery-powered devices and low-power applications.

Page Size (words): 8/16

Flexible page sizes allow for optimized data handling based on application needs.

Maximum Time At Peak Reflow Temperature (s): 40

Extended time at peak reflow temperature ensures reliable solder joints during manufacturing.

Peak Reflow Temperature °C: 260

High peak reflow temperature compatibility ensures reliable assembly processes in manufacturing.

Type: NOR TYPE

NOR type flash memory offers fast read speeds and random access, ideal for code storage applications.

Common Flash Interface: YES

Compatibility with a common flash interface simplifies integration with existing systems.

Parallel or Serial: PARALLEL

Parallel operation allows for faster data transfers, improving overall system performance.

Terminal Form: GULL WING

Gull wing terminals provide reliable soldering and mechanical strength, enhancing durability.

Sector Size (Words): 8K,64K

Varied sector sizes allow for flexible data management and efficient utilization of memory space.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA denotes efficient power usage, suitable for portable applications.

No. of Words: 8388608 words

High word count ensures ample storage capacity for complex data and applications.

Toggle Bit: YES

Toggle bit functionality enhances the capabilities for error checking and management within memory.

Memory Width: 16

A 16-bit memory width boosts data processing speed and efficiency.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for increased component density, ideal for modern electronics.

No. of Words Code: 8M

The 8M code provides clarity on the memory's storage capacity, ensuring it meets application needs.

Command User Interface: YES

A command user interface simplifies memory operations, making it user-friendly for developers.

Ready or Busy: YES

Ready/busy signaling allows for efficient communication and synchronization with the processor.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6V supports various device designs while maintaining reliability.

Boot Block: BOTTOM/TOP

Dual boot block configuration provides more flexibility for firmware storage and recovery features.

Memory Density: 134217728 bit

High memory density ensures sufficient storage capacity for demanding applications.

Memory IC Type: FLASH

Flash memory type allows for non-volatile storage, essential for retaining data without power.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current consumption prolongs battery life in portable devices.

Maximum Access Time: 60 ns

Fast access time of 60 ns ensures swift data retrieval, enhancing system responsiveness.

Data Polling: YES

Data polling capability enhances the system's efficiency in managing memory operations and improving performance.

Technical Specifications

Flash Memory M29DW128F60NF1F attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

60 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

M29DW128F60NF1F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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