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M29DW128F60NF1

STMicroelectronics

M29DW128F60NF1 by STMicroelectronics

M29DW128F60NF1 from STMicroelectronics is a 16-bit NOR Flash memory with a density of 128Mb, operating at 3V. It features asynchronous access with a max speed of 60ns and supports up to 16 sectors. Ideal for embedded applications, it offers reliable data storage in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,916 parts In-Stock

1+ parts

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2,916

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Digiode

USA . 1,760 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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1,760

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Anansix

USA . 1,652 parts In-Stock

1+ parts

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100+ parts

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1,652

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,597 parts In-Stock

1+ parts

$4.336

100+ parts

-

1k+ parts

$3.902

10k+ parts

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1,597

$4.336

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$3.902

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MKK Technologies

India . 2,339 parts In-Stock

1+ parts

$8.153

100+ parts

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2,339

$8.153

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DigiPath Technology Company

USA . 2,339 parts In-Stock

1+ parts

$8.153

100+ parts

-

1k+ parts

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10k+ parts

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2,339

$8.153

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Corphita

USA . 4,766 parts In-Stock

1+ parts

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4,766

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Parana Technologies

USA . 1,918 parts In-Stock

1+ parts

-

100+ parts

$5.184

1k+ parts

-

10k+ parts

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1,918

-

$5.184

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Overview

Unlock unparalleled performance and reliability with the M29DW128F60NF1 Flash Memory from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality memory offers exceptional speed and efficiency for diverse applications, from consumer electronics to industrial systems. Benefit from its compact design and low power consumption, ensuring your devices operate smoothly while maximizing longevity. Experience the perfect blend of cutting-edge technology and trusted manufacturing excellence, elevating your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors.

Surface Mount: YES

Surface mount technology allows for compact design and efficient space utilization on PCBs.

Package Shape: RECTANGULAR

The rectangular design helps in effective placement and optimization in various applications.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility and ease of integration in systems requiring non-blocking access.

Nominal Supply Voltage / Vsup (V): 3

A nominal voltage of 3V ensures compatibility with a wide range of circuits and reduces power consumption.

Power Supplies (V): 3/3.3

This dual supply range accommodates various system designs while maintaining reliable performance.

No. of Terminals: 56

A higher number of terminals allows for complex configurations and more connections for functionality.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Thin profile packaging aids in space-constrained applications and enhances design flexibility.

Alternate Memory Width: 8

8-bit width optimizes performance for applications needing efficient data handling.

Maximum Operating Temperature: 70 °C

A high operating temperature range makes this memory suitable for various environments without risk of failure.

Organization: 8MX16

An organized structure of 8M x 16 supports efficient data management and access.

Minimum Operating Temperature: 0 °C

The ability to operate at a minimum of 0 °C ensures functionality in cooler climates.

No. of Sectors/Size: 16,254

A large number of sectors enhances data organization and supports large applications needing segment control.

Terminal Finish: TIN LEAD

Tin-lead finish provides excellent solderability and reliability in connections.

Terminal Position: DUAL

Dual position terminals allow for versatile mounting options in various system designs.

Maximum Seated Height: 1.2 mm

A low profile seating height facilitates integration into tight spaces and compact designs.

Width: 14 mm

This compact width makes it suitable for applications with limited PCB area.

Minimum Supply Voltage (Vsup): 2.7 V

Flexibility in the supply voltage starting low at 2.7V broadens compatibility with diverse devices.

Page Size (words): 8/16

The variable page size accommodates different data handling needs enhancing performance.

Type: NOR TYPE

NOR type memory offers fast random access making it suitable for applications requiring quick data retrieval.

Common Flash Interface: YES

Compatibility with common flash interfaces simplifies integration with existing hardware.

Length: 18.4 mm

The compact length ensures compatibility with space-limited designs.

Programming Voltage (V): 3

A consistent programming voltage of 3V enhances reliability during programming operations.

Temperature Grade: COMMERCIAL

Commercial temperature grade ensures sufficient performance for general consumer applications.

Technology: CMOS

CMOS technology offers low power consumption increasing efficiency in battery-operated devices.

Parallel or Serial: PARALLEL

Parallel access allows for faster data transmission speeds boosting overall performance.

Terminal Form: GULL WING

Gull wing leads provide ease of soldering and reliable connections on PCBs.

Sector Size (Words): 8K,64K

Flexible sector sizes accommodate various programming and data storage strategies.

Maximum Supply Current: 20 mA

Low maximum supply current ensures reduced power consumption during operation.

No. of Words: 8388608 words

A large word count provides ample storage capacity for substantial data applications.

Toggle Bit: YES

The toggle bit adds functionality for better control and monitoring of data states.

Memory Width: 16

Supporting a 16-bit width allows for efficient processing of larger data blocks.

Terminal Pitch: 0.5 mm

A tight terminal pitch facilitates high-density designs, optimizing PCB space.

No. of Words Code: 8M

An 8M word code indicates a high capacity, providing a robust solution for demanding applications.

Command User Interface: YES

The user interface simplifies operations and programming, making it user-friendly for developers.

Ready or Busy: YES

The readiness indicator enhances operational control for efficient data management.

Maximum Supply Voltage (Vsup): 3.6 V

The upper voltage limit of 3.6V allows for flexibility in power supply selections.

Boot Block: BOTTOM/TOP

Boot block configuration enables versatile system design and programming capabilities.

Memory Density: 134217728 bit

High memory density accommodates large data sets essential for modern applications.

Memory IC Type: FLASH

Flash memory provides the ability to be electrically erased and reprogrammed, enhancing versatility.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current minimizes power drain, making it ideal for energy-efficient designs.

Maximum Access Time: 60 ns

A fast access time of 60 ns improves read speeds, significantly enhancing performance levels.

Data Polling: YES

Data polling feature allows for real-time monitoring of the memory state, aiding in management and control.

Technical Specifications

Flash Memory M29DW128F60NF1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

60 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

M29DW128F60NF1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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