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M29DW128F60NF6

STMicroelectronics

M29DW128F60NF6 by STMicroelectronics

M29DW128F60NF6 from STMicroelectronics is a 16-bit NOR Flash memory with a density of 128Mb, operating at 3V. It features asynchronous access with a max speed of 60 ns and operates in extreme temperatures from -40 °C to 85 °C. Ideal for industrial applications, it supports dual terminal configurations and offers reliable data polling.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 6,557 parts In-Stock

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6,557

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Anansix

USA . 2,622 parts In-Stock

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2,622

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Vyrian

USA . 1,009 parts In-Stock

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1,009

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 39 parts In-Stock

1+ parts

$3.355

100+ parts

-

1k+ parts

$3.020

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39

$3.355

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$3.020

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MKK Technologies

India . 775 parts In-Stock

1+ parts

$6.309

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775

$6.309

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DigiPath Technology Company

USA . 775 parts In-Stock

1+ parts

$6.309

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775

$6.309

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Corphita

USA . 6,286 parts In-Stock

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6,286

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Parana Technologies

USA . 499 parts In-Stock

1+ parts

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$4.012

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499

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$4.012

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Overview

Unlock the potential of your designs with the M29DW128F60NF6 Flash Memory from STMicroelectronics. Renowned for its exceptional quality and reliability, this memory chip is perfect for demanding industrial applications, combining a robust temperature range with efficient performance. Experience faster data access and seamless integration in compact spaces, ensuring your projects thrive in any environment. Elevate your innovation with the trusted expertise of STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy construction ensures robust performance and resistance to environmental factors.

Surface Mount: YES

Surface mount technology allows for efficient use of PCB space, making integration into compact designs easier.

Package Shape: RECTANGULAR

The rectangular package shape provides a standard footprint for easy placement and soldering on PCBs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows faster access and simpler interfacing with various microcontrollers.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V optimizes power consumption while maintaining performance.

Power Supplies (V): 3/3.3

Supports both 3V and 3.3V power supplies, making it versatile for different applications.

No. of Terminals: 56

A higher number of terminals allows for a more complex interface, enabling greater functionality and connectivity.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The thin profile design facilitates space-saving in electronic devices without sacrificing performance.

Alternate Memory Width: 8

An 8-bit memory width provides flexibility for data handling in various applications, optimizing performance.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments, making it suitable for industrial applications.

Organization: 8MX16

The organization into 8M x 16 maximizes data storage efficiency and access speed.

Minimum Operating Temperature: -40 °C

Capable of functioning in low-temperature settings, enhancing reliability in harsh environments.

No. of Sectors/Size: 16,254

A high number of sectors provides flexible memory management and can improve read/write efficiency.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers excellent solderability and reliability during manufacturing.

Terminal Position: DUAL

Dual terminal positioning allows for better mechanical stability and connection options in circuit designs.

Maximum Seated Height: 1.2 mm

Low seated height enables compact packaging designs, important for space-constrained applications.

Width: 14 mm

A compact width aids in fitting into tight spaces within electronic assemblies.

Minimum Supply Voltage (Vsup): 2.7 V

Operating at a minimum of 2.7V ensures compatibility with various power sources, including battery-powered devices.

Page Size (words): 8/16

Support for multiple page sizes enhances data handling efficiency and flexibility.

Type: NOR TYPE

NOR type flash memory offers reliable random access and fast read speeds, making it ideal for code storage.

Common Flash Interface: YES

Common interface standardization facilitates easier integration with existing systems and reduces design complexity.

Length: 18.4 mm

Compact length allows for placement in small electronic devices without sacrificing performance.

Programming Voltage (V): 3

Standard programming voltage of 3V streamlines development and ensures compatibility with most systems.

Temperature Grade: INDUSTRIAL

Industrial temperature grade guarantees robustness in extreme environmental conditions, ensuring device longevity.

Technology: CMOS

CMOS technology enhances power efficiency and reliability, important for low-power applications.

Parallel or Serial: PARALLEL

Parallel interface allows for faster data transfer rates, enhancing overall performance.

Terminal Form: GULL WING

Gull wing terminals facilitate easier soldering and mounting on PCBs, improving reliability.

Sector Size (Words): 8K,64K

Diverse sector sizes provide flexibility in data management and optimize storage according to application needs.

Maximum Supply Current: 20 mA

Low maximum supply current minimizes power consumption, ideal for battery-powered devices.

No. of Words: 8388608 words

A high word count ensures substantial data storage capacity, suitable for various applications.

Toggle Bit: YES

Toggle bit feature enables easy and reliable data polling during programming, enhancing performance.

Memory Width: 16

16-bit memory width facilitates efficient data processing and access, important for modern applications.

Terminal Pitch: 0.5 mm

A 0.5 mm terminal pitch allows for high-density PCB layouts, making it suitable for compact designs.

No. of Words Code: 8M

The 8M word code indicates a significant storage capability, suitable for a variety of applications.

Command User Interface: YES

A user-friendly command interface simplifies operation and integration into existing systems.

Ready or Busy: YES

The ready/busy signal allows for effective state management during data operations, improving system reliability.

Maximum Supply Voltage (Vsup): 3.6 V

Max supply voltage of 3.6V provides a buffer for safe operation even with voltage fluctuations.

Boot Block: BOTTOM/TOP

Bottom/top boot block configuration allows flexibility in system design and memory allocation.

Memory Density: 134217728 bit

High memory density enables efficient storage solutions, catering to more complex applications.

Memory IC Type: FLASH

Flash memory is versatile for various applications, providing fast access and reliable data retention.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current enhances power efficiency, critical for battery-operated devices.

Maximum Access Time: 60 ns

Fast access time of 60 ns ensures quick data retrieval, improving overall system performance.

Data Polling: YES

The presence of data polling feature aids in optimizing performance during write cycles, ensuring reliability.

Technical Specifications

Flash Memory M29DW128F60NF6 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

60 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

M29DW128F60NF6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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