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M29DW128F60ZA1

STMicroelectronics

M29DW128F60ZA1 by STMicroelectronics

M29DW128F60ZA1 from STMicroelectronics is a 16-bit NOR Flash memory with a density of 128Mb, operating at 3V. It features asynchronous access with a max time of 60ns and supports parallel interface. Ideal for embedded applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,585 parts In-Stock

1+ parts

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4,585

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Digiode

USA . 4,333 parts In-Stock

1+ parts

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1k+ parts

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4,333

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Anansix

USA . 1,790 parts In-Stock

1+ parts

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1,790

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 328 parts In-Stock

1+ parts

$2.412

100+ parts

-

1k+ parts

$2.171

10k+ parts

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328

$2.412

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$2.171

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MKK Technologies

India . 2,238 parts In-Stock

1+ parts

$4.536

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2,238

$4.536

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DigiPath Technology Company

USA . 2,238 parts In-Stock

1+ parts

$4.536

100+ parts

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2,238

$4.536

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Corphita

USA . 4,673 parts In-Stock

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4,673

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Parana Technologies

USA . 1,690 parts In-Stock

1+ parts

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100+ parts

$2.884

1k+ parts

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1,690

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$2.884

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Overview

Unlock unparalleled performance with the M29DW128F60ZA1 Flash Memory from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers a reliable solution that enhances your applications across various sectors, from automotive to consumer electronics. With its compact design and efficient power management, this memory device ensures faster data access and seamless integration, empowering your projects with speed and efficiency. Elevate your designs today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy materials used in the package body provide excellent protection against external influences, ensuring longevity and reliability.

Surface Mount: YES

The surface mount design allows for easy integration into compact electronic devices, saving valuable space on PCBs.

Package Shape: RECTANGULAR

The rectangular shape is conducive for efficient arrangement on circuit boards, optimizing space utilization.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexible timing, making the memory suitable for a wide range of applications requiring quick access times.

Nominal Supply Voltage / Vsup: 3 V

The low nominal voltage helps in reducing power consumption, enhancing the energy efficiency of electronic devices.

Power Supplies (V): 3/3.3 V

Compatibility with both 3V and 3.3V power supplies provides flexibility for different design requirements.

No. of Terminals: 64

The 64 terminals facilitate a high level of connectivity, enabling more data lines and control signals for improved performance.

Package Style (Meter): GRID ARRAY, THIN PROFILE

The thin profile grid array package allows for high-density mounting, suitable for space-constrained applications.

Alternate Memory Width: 8

With an 8-bit alternate memory width, this memory can be used in various applications requiring specific data handling needs.

Maximum Operating Temperature: 70 °C

A high maximum operating temperature ensures stable performance in warm environments, making it suitable for automotive and industrial applications.

Organization: 8MX16

The 8M x 16 organization allows for efficient data management and storage, catering to a variety of data processing applications.

Minimum Operating Temperature: 0 °C

The ability to operate in low temperatures makes this device versatile for a range of environments without performance loss.

No. of Sectors/Size: 16,254

A high number of sectors provides flexibility in data storage organization, improving data retrieval and management capabilities.

Terminal Position: BOTTOM

Bottom terminal positioning minimizes the height profile of the device, essential for low-profile applications.

Maximum Seated Height: 1.2 mm

The low seated height is crucial for compact devices, allowing for stacking or dense arrangements in electronic designs.

Width: 10 mm

The compact width aids in fitting the memory into small designs, promoting miniaturization in electronic products.

Minimum Supply Voltage (Vsup): 2.7 V

The lower minimum supply voltage provides flexibility in power source selection, beneficial for battery-powered applications.

Page Size (words): 8/16

A configurable page size enhances data throughput flexibility, allowing for tailored optimization for specific application requirements.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds ensures compatibility with standard soldering processes, simplifying manufacturing.

Peak Reflow Temperature °C: 240

Tolerance to high peak reflow temperatures makes this memory robust against common soldering techniques.

Type: NOR TYPE

NOR type memory offers fast random access and efficient reading capabilities, making it ideal for executing code directly from flash.

Common Flash Interface: YES

The use of a common flash interface ensures compatibility with a wide range of devices and systems, enhancing integration.

Length: 13 mm

The compact length facilitates placement in tight spaces, crucial for modern electronic design.

Programming Voltage (V): 3

A standard programming voltage simplifies circuit design, allowing for easier interconnections with other components.

Temperature Grade: COMMERCIAL

Commercial temperature grading ensures reliability in typical consumer applications, making it a suitable choice for general use.

Technology: CMOS

Utilizing CMOS technology provides low power consumption and high-speed operation, favorable for portable devices.

Parallel or Serial: PARALLEL

Parallel interface supports faster data transfer rates, improving overall system performance in high-demand applications.

Terminal Form: BALL

Ball terminal form grants improved mechanical stability and facilitates better thermal performance during operation.

Sector Size (Words): 8K, 64K

Flexible sector sizes allow for efficient memory management, accommodating various application needs.

Maximum Supply Current: 20 mA

Low maximum supply current ensures energy efficiency, making it suitable for power-sensitive applications.

No. of Words: 8388608 words

An extensive memory capacity of over 8 million words supports the storage of complex data and applications.

Toggle Bit: YES

Support for toggle bit enables efficient monitoring of memory status, enhancing reliability in data operations.

Memory Width: 16

16-bit memory width allows for efficient data processing and increases the performance of data-intensive applications.

Terminal Pitch: 1 mm

The 1 mm terminal pitch allows for precise routing in densely packed printed circuit boards, making it versatile for design.

No. of Words Code: 8M

The coding of 8M words signifies a high density, suitable for sophisticated applications requiring significant data handling.

Command User Interface: YES

A command user interface simplifies interaction with the memory, making it easier for developers to integrate.

Ready or Busy: YES

The ready/busy output helps in synchronization with other components, improving system coordination during data transactions.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage allows for flexibility in power design, accommodating various application needs.

Boot Block: BOTTOM/TOP

Configuration options for boot blocks at both top and bottom enhance versatility in firmware applications.

Memory Density: 134217728 bit

A high memory density of 134 million bits ensures ample storage for a wide range of applications, from embedded systems to complex computing tasks.

Memory IC Type: FLASH

As a flash memory type, this IC offers non-volatile storage, retaining data without the need for continuous power.

Maximum Standby Current: 0.0001 Amp

Extremely low standby current ensures minimal power consumption while idle, ideal for battery-operated devices.

Maximum Access Time: 60 ns

A maximum access time of 60 ns facilitates rapid data retrieval, making the memory suitable for high-speed applications.

Data Polling: YES

Data polling capability enhances the reliability of memory operations by allowing real-time status monitoring and feedback.

Technical Specifications

Flash Memory M29DW128F60ZA1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

60 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PBGA-B64

Length:

13 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

64

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA64,8X8,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

240

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

YES

Type:

NOR TYPE

Width:

10 mm

Trade Compliance

M29DW128F60ZA1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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