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M29DW128F70NF1F

STMicroelectronics

M29DW128F70NF1F by STMicroelectronics

M29DW128F70NF1F by STMicroelectronics is a 128Mb NOR Flash memory with a 3V supply, featuring asynchronous operation and a max access time of 70 ns. Its compact SOIC package (14x18.4 mm) makes it ideal for space-constrained applications. With 8M words organized in sectors, it's perfect for embedded systems requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,169 parts In-Stock

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Digiode

USA . 2,059 parts In-Stock

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2,059

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Anansix

USA . 1,823 parts In-Stock

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1,823

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,183 parts In-Stock

1+ parts

$3.433

100+ parts

-

1k+ parts

$3.090

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2,183

$3.433

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$3.090

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MKK Technologies

India . 40 parts In-Stock

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$6.456

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40

$6.456

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DigiPath Technology Company

USA . 40 parts In-Stock

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$6.456

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40

$6.456

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Corphita

USA . 2,238 parts In-Stock

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Parana Technologies

USA . 1,193 parts In-Stock

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$4.105

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1,193

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$4.105

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Overview

Unlock unparalleled performance and reliability with the M29DW128F70NF1F from STMicroelectronics. As a leader in innovative memory solutions, STMicroelectronics ensures exceptional quality and durability in this versatile flash memory, ideal for diverse applications like consumer electronics, automotive systems, and industrial devices. Experience faster access times and energy efficiency that drive your projects forward, making it the perfect choice for cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and protection against environmental factors, making this flash memory reliable for various applications.

Surface Mount: YES

Surface mount technology allows for compact designs and ease of integration into modern electronic devices, enhancing the versatility of this product.

Package Shape: RECTANGULAR

The rectangular package shape helps in efficient space utilization on circuit boards, facilitating smoother assembly processes.

Operating Mode: ASYNCHRONOUS

Asynchronous operation reduces latency during read and write processes, improving overall system responsiveness.

Nominal Supply Voltage / Vsup (V): 3

A nominal supply voltage of 3V indicates compatibility with a wide range of power supply systems, ensuring flexibility in system design.

Power Supplies (V): 3/3.3

Dual voltage support (3V and 3.3V) accommodates various applications, making it suitable for both standard and low-power devices.

No. of Terminals: 56

The 56 terminals provide ample connectivity options, allowing for comprehensive integration in complex electronic systems.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The small outline, thin profile design is perfect for space-constrained applications, maintaining a low form factor.

Alternate Memory Width: 8

Support for an alternate memory width of 8 increases flexibility in memory configurations, catering to varying application needs.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliable performance in moderately high-temperature environments.

Organization: 8MX16

The organization of 8MX16 provides a good balance between data density and access efficiency, enhancing the performance of data-intensive applications.

Minimum Operating Temperature: 0 °C

Operating from 0 °C ensures functionality in a broad range of environments, providing a stable option for various applications.

No. of Sectors/Size: 16,254

Having 16,254 sectors allows for efficient data management and better allocation of memory resources in longer-term storage applications.

Terminal Finish: MATTE TIN/TIN BISMUTH

The matte tin/tin bismuth finish enhances solderability, ensuring a more reliable connection during assembly.

Terminal Position: DUAL

Dual terminal positioning aids in effective mounting and integration, reducing potential assembly complications.

Maximum Seated Height: 1.2 mm

The low maximum seated height is ideal for devices with tight space constraints, allowing for a sleek design.

Width: 14 mm

The compact width of 14 mm makes it suitable for miniaturized electronic devices where space is at a premium.

Minimum Supply Voltage (Vsup): 2.7 V

The ability to operate down to 2.7V increases compatibility with a variety of power supply designs.

Page Size (words): 8/16

The flexible page size options of 8 or 16 words enable optimization depending on the specific application requirements.

Maximum Time At Peak Reflow Temperature (s): 40

A maximum peak reflow time of 40 seconds ensures minimal thermal stress during assembly, enhancing product longevity.

Peak Reflow Temperature °C: 260

Withstanding a peak reflow temperature of 260 °C indicates compatibility with modern soldering processes, ensuring reliability.

Type: NOR TYPE

As a NOR type flash memory, it allows for faster read speeds and is suitable for executing code directly from memory.

Common Flash Interface: YES

Support for a common flash interface ensures widespread compatibility with existing systems, simplifying integration.

Length: 18.4 mm

The length of 18.4 mm contributes to the compact design, making it an excellent choice for handheld and space-limited devices.

Programming Voltage (V): 3

A programming voltage of 3V aligns with standard voltage levels, providing ease of integration in typical electronic environments.

Temperature Grade: COMMERCIAL

Commercial temperature grading means it is suitable for a broad range of consumer electronics applications.

Technology: CMOS

CMOS technology offers low power consumption and high speed, positioning it as an efficient choice for battery-operated devices.

Parallel or Serial: PARALLEL

Parallel interface allows for faster data throughput compared to serial interfaces, improving performance in high-demand scenarios.

Terminal Form: GULL WING

Gull wing terminals are advantageous for automated assembly processes, facilitating efficiency in manufacturing.

Sector Size (Words): 8K, 64K

The sector size options provide flexibility for data management, accommodating both small and large data segments efficiently.

Maximum Supply Current: 20 mA

A maximum supply current of 20 mA ensures energy efficiency, making this product a good option for low-power applications.

No. of Words: 8388608 words

With 8,388,608 words, the memory density is suitable for data-intensive applications, providing ample storage capacity.

Toggle Bit: YES

The toggle bit feature enhances error detection and memory reliability, making it suitable for critical applications.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing and faster data access, improving overall performance.

Terminal Pitch: 0.5 mm

0.5 mm terminal pitch is standard for many modern devices, facilitating compatibility and easier assembly.

No. of Words Code: 8M

The 8M words coding denotes sufficient space for substantial applications, catering to diverse software and storage needs.

Command User Interface: YES

Having a command user interface makes it straightforward to interact with the memory, simplifying programming and control.

Ready or Busy: YES

The ready or busy signal provides essential feedback for system control, enhancing the efficiency of data transactions.

Maximum Supply Voltage (Vsup): 3.6 V

The capability to handle up to 3.6V ensures robustness and adaptability to various power supply conditions.

Boot Block: BOTTOM/TOP

The dual boot block configuration allows flexibility in firmware design and more effective memory management.

Memory Density: 134217728 bit

With a memory density of 134,217,728 bits, this flash memory can support large data sets, ideal for extensive applications.

Memory IC Type: FLASH

As a flash memory IC, it combines fast read/write capabilities with non-volatility, ensuring data retention without power.

Maximum Standby Current: 0.0001 Amp

A very low maximum standby current enhances power efficiency, making it perfect for battery-operated devices that require longevity.

Maximum Access Time: 70 ns

Fast access time of 70 ns ensures quick data retrieval, crucial for applications that require high performance.

Data Polling: YES

Data polling capability allows for efficient data management and enhanced functionality, assisting in various operational scenarios.

Technical Specifications

Flash Memory M29DW128F70NF1F attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

100,000 PROGRAM/ERASE CYCLES

Alternate Memory Width:

8

Boot Block:

BOTTOM/TOP

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G56

JESD-609 Code:

e3/e6

Length:

18.4 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

16,254

No. of Terminals:

56

No. of Words:

8388608 words

No. of Words Code:

8M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP56,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Page Size (words):

8/16

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

8K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN/TIN BISMUTH

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Toggle Bit:

YES

Type:

NOR TYPE

Width:

14 mm

Trade Compliance

M29DW128F70NF1F Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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