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MT9V022IA7ATC-DR

Onsemi

MT9V022IA7ATC-DR by Onsemi

MT9V022IA7ATC-DR by Onsemi is a 1/3 inch CMOS image sensor with 752x480 pixels. It operates at 26.6 MHz master clock, offers a dynamic range of 54.4 dB, and has a frame rate of 60 fps. Ideal for applications requiring high-resolution imaging in devices such as surveillance cameras and industrial inspection systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 8,813 parts In-Stock

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Digiode

USA . 1,980 parts In-Stock

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Nova Conductors

Japan . 300 parts In-Stock

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Ampacity Inc.

Singapore . 1,519 parts In-Stock

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$3.750

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AZTECH Wire

Italy . 343 parts In-Stock

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Problanco Electronics

Mexico . 7,678 parts In-Stock

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Kulean Microsystems

USA . 4,520 parts In-Stock

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TANS Electronics

Latvia . 3,712 parts In-Stock

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SupplyDigital Components

Austria . 2,298 parts In-Stock

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Corphita

USA . 406 parts In-Stock

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UHIMA Technologies

Türkiye . 388 parts In-Stock

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Corohmni

South Africa . 169 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Capture the essence of every moment with the MT9V022IA7ATC-DR image sensor by Onsemi. As a leader in the industry, Onsemi ensures top-notch quality and reliability in all their products. This image sensor offers unparalleled performance in a compact package, making it ideal for a wide range of applications such as security cameras, industrial imaging, and automotive systems. With its advanced features and cutting-edge technology, this sensor delivers exceptional value, clarity, and precision to customers, allowing them to capture the world in stunning detail like never before.

Feature Benefit Bullets

Pixel Size (um): 6X6

Smaller pixel size allows for higher resolution images and better low-light performance.

Maximum Supply Voltage: 3.6 V

Higher supply voltage allows for better signal to noise ratio and improved performance in varying conditions.

Master Clock: 26.6 MHz

High master clock frequency enables fast data readout and processing, resulting in smooth video quality.

Body Width: 9 inch

Compact body width makes it suitable for applications where space is limited.

Sensors or Transducers Type: IMAGE SENSOR,CMOS

CMOS image sensor technology offers low power consumption and high-quality image output.

Body Height: 1.3 mm

Low body height allows for easy integration into compact devices.

Minimum Supply Voltage: 3 V

Lower minimum supply voltage ensures energy efficiency and longer battery life for the product.

Maximum Operating Temperature: 85 °C

Wide operating temperature range ensures reliability in various environmental conditions.

Horizontal Pixel: 752

High horizontal pixel count provides detailed and sharp images.

Output Range: -9-9mA

Wide output range allows for capturing a wide range of light intensities accurately.

Output Type: DIGITAL CURRENT

Digital current output simplifies signal processing and integration with other digital systems.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature ensures functionality even in extreme cold conditions.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish ensures good connectivity and durability.

Maximum Operating Current: 60 mA

Moderate operating current ensures energy efficiency and prevents overheating.

Dynamic Range: 54.4 dB

High dynamic range allows for capturing both bright and dark areas accurately in the same scene.

Vertical Pixel: 480

Vertical pixel count contributes to the overall image resolution and quality.

Body Length/Diameter: 9 mm

Compact body length/diameter enables versatile mounting options in various devices.

Optical Format (inch): 1/3

Optical format specification highlights the compatibility of the sensor with various lenses and optics.

Termination Type: SOLDER

Solder termination ensures secure connection and durability in harsh conditions.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and data transfer with other digital devices.

Frame Rate: 60 fps

High frame rate enables smooth video recording and fast-moving object capture.

Array Type: FRAME

Frame array type ensures efficient image capture and processing.

Mounting Feature: SURFACE MOUNT

Surface mount feature allows for easy, secure, and space-saving installation in electronic devices.

Technical Specifications

Image Sensors MT9V022IA7ATC-DR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT ALSO OPERATES AT ANALOG SUPPLY VOLTAGE 3-3.60 V, IT ALSO HAVE DYNAMIC RANGE 80DB-100DB IN HIDY MODE

Array Type:

FRAME

Body Width:

9 inch

Body Height:

1.3 mm

Body Length/Diameter:

9 mm

Dynamic Range:

54.4 dB

Frame Rate:

60 fps

Horizontal Pixel:

752

JESD-609 Code:

e1

Master Clock:

26.6 MHz

Mounting Feature:

Maximum Operating Current:

60 mA

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Range:

Output Type:

Package Shape or Style:

Pixel Size (um):

6X6

Sensors or Transducers Type:

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Terminal Finish:

TIN SILVER COPPER

Termination Type:

SOLDER

Vertical Pixel:

480

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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