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MT9M021IA3XTC-DRBR

Onsemi

MT9M021IA3XTC-DRBR by Onsemi

MT9M021IA3XTC-DRBR by Onsemi is an image sensor with 1280x960 resolution, 3.75um pixel size, and 50MHz master clock. Ideal for applications requiring a digital voltage output interface, it operates b/w -30 to 70 °C with a dynamic range of 64dB.

Median Price

$13.805

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 223 parts In-Stock

1+ parts

$14.000

100+ parts

-

1k+ parts

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223

$14.000

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-

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DigiKey

USA . 437 parts In-Stock

1+ parts

-

100+ parts

$12.720

1k+ parts

$12.720

10k+ parts

$12.720

437

-

$12.720

$12.720

$12.720

Flip Electronics (Authorized)

USA . 437 parts In-Stock

1+ parts

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437

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Verical

USA . 223 parts In-Stock

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100+ parts

$13.900

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223

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$13.900

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Rochester

USA . 10 parts In-Stock

1+ parts

-

100+ parts

$13.710

1k+ parts

$12.270

10k+ parts

$11.540

10

-

$13.710

$12.270

$11.540

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,023 parts In-Stock

1+ parts

$10.925

100+ parts

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2,023

$10.925

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Vyrian

USA . 4,345 parts In-Stock

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4,345

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Flip Electronics

USA . 437 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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437

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,813 parts In-Stock

1+ parts

$10.350

100+ parts

-

1k+ parts

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1,813

$10.350

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Corohmni

South Africa . 265 parts In-Stock

1+ parts

$11.400

100+ parts

-

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10k+ parts

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265

$11.400

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

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100+ parts

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8,000

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Problanco Electronics

Mexico . 5,324 parts In-Stock

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5,324

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SupplyDigital Components

Austria . 4,557 parts In-Stock

1+ parts

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4,557

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UHIMA Technologies

Türkiye . 650 parts In-Stock

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650

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Kulean Microsystems

USA . 329 parts In-Stock

1+ parts

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329

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TANS Electronics

Latvia . 142 parts In-Stock

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142

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Overview

Capture every moment in stunning detail with the MT9M021IA3XTC-DRBR image sensor by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-quality products that are reliable and efficient. This image sensor is perfect for a wide range of applications, providing crystal-clear images with a high dynamic range and fast frame rate. Experience the value and benefits of this innovative technology, offering customers unrivaled performance and versatility in a compact and easy-to-use package. Elevate your imaging capabilities with the MT9M021IA3XTC-DRBR and see the world in a whole new light.

Feature Benefit Bullets

Pixel Size (um): 3.75

Smaller pixel size allows for higher resolution images with more detail.

Maximum Supply Voltage: 1.95 V

Higher maximum supply voltage provides flexibility in power supply options.

Master Clock: 50 MHz

High master clock frequency allows for fast data processing and high frame rates.

Body Width: 10 inch

Compact body width allows for easy integration into various electronic devices.

Sensors or Transducers Type: IMAGE SENSOR, CMOS

CMOS image sensors are known for low power consumption and high-quality image output.

Body Height: 1.38 mm

Low profile body height enables sleek design and space-saving in devices.

Package Shape or Style: SQUARE

Square package shape provides stability and ease of mounting.

Minimum Supply Voltage: 1.7 V

Low minimum supply voltage helps in reducing power consumption.

Maximum Operating Temperature: 70 °C

Wide operating temperature range ensures reliable performance in various environments.

Horizontal Pixel: 1280

High number of horizontal pixels results in high-resolution images with sharp details.

Output Type: DIGITAL VOLTAGE

Digital voltage output simplifies signal processing and integration with digital systems.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature allows for use in cold environments without performance degradation.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Terminal finish with multiple metals ensures good conductivity and durability.

Maximum Operating Current: 55 mA

Moderate operating current ensures efficient power usage and longer battery life.

Dynamic Range: 64 dB

Wide dynamic range captures details in both bright and dark areas of the image.

Vertical Pixel: 960

High number of vertical pixels contributes to the overall image quality and resolution.

Body Length/Diameter: 10 mm

Compact body length or diameter allows for versatile placement in different devices.

Optical Format (inch): 1/3

Standard optical format ensures compatibility with various lenses and accessories.

Termination Type: SOLDER

Solder termination provides secure connections and reliability in operation.

Output Interface Type: 2-WIRE INTERFACE

2-wire interface simplifies connectivity and data transfer between the sensor and other components.

Frame Rate: 60 fps

High frame rate results in smooth video recording and real-time image capture.

Array Type: FRAME

Frame array type allows for simultaneous capture of multiple pixels for fast image processing.

Sensitivity (V/lx.s): 5.3 V/lx.s

High sensitivity enables the sensor to capture clear images even in low-light conditions.

Mounting Feature: SURFACE MOUNT

Surface mount feature facilitates easy installation and secure mounting of the sensor.

Technical Specifications

Image Sensors MT9M021IA3XTC-DRBR attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

GLOBAL SHUTTER; IT ALSO OPERATES AT ANALOG VOLTAGE OF 2.5 V TO 3.1 V

Array Type:

FRAME

Body Width:

10 inch

Body Height:

1.38 mm

Body Length/Diameter:

10 mm

Dynamic Range:

64 dB

Frame Rate:

60 fps

Horizontal Pixel:

1280

JESD-609 Code:

e1

Master Clock:

50 MHz

Mounting Feature:

Maximum Operating Current:

55 mA

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-30 Cel

Optical Format (inch):

1/3

Output Interface Type:

2-WIRE INTERFACE

Output Type:

Package Shape or Style:

Pixel Size (um):

3.75

Sensitivity (V/lx.s):

5.3 V/lx.s

Sensors or Transducers Type:

Maximum Supply Voltage:

1.95 V

Minimum Supply Voltage:

1.7 V

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Termination Type:

SOLDER

Vertical Pixel:

960

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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