Loading...

KAF-09001-ABA-DP-BA

Onsemi

KAF-09001-ABA-DP-BA by Onsemi

The Onsemi KAF-09001-ABA-DP-BA is a CCD image sensor with 3024x3024 pixels, 12x12 um pixel size, and 84 dB dynamic range. It operates b/w -50 to 60 °C and has a supply voltage range of 14.8V to 17V. Ideal for high-resolution imaging applications in various industries due to its full-frame array and current output.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,020 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,020

-

-

-

-

Digiode

USA . 2,411 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,411

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 975 parts In-Stock

1+ parts

$21.680

100+ parts

-

1k+ parts

-

10k+ parts

-

975

$21.680

-

-

-

Problanco Electronics

Mexico . 3,590 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,590

-

-

-

-

TANS Electronics

Latvia . 2,897 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,897

-

-

-

-

Kulean Microsystems

USA . 2,103 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,103

-

-

-

-

Corphita

USA . 1,791 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,791

-

-

-

-

SupplyDigital Components

Austria . 1,712 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,712

-

-

-

-

UHIMA Technologies

Türkiye . 511 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

511

-

-

-

-

Corohmni

South Africa . 166 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

166

-

-

-

-

Overview

Discover the unparalleled quality and precision of the KAF-09001-ABA-DP-BA image sensor by Onsemi. With a pixel size of 12x12 um, this advanced CCD sensor offers exceptional performance in a variety of applications. From high-resolution imaging to industrial automation, this sensor delivers unmatched reliability and accuracy. Experience enhanced image capture with the KAF-09001-ABA-DP-BA, backed by the trusted manufacturer Onsemi, known for their cutting-edge technology and commitment to excellence. Unlock endless possibilities with this top-of-the-line image sensor, providing value, benefits, and advantages that set it apart from the competition.

Feature Benefit Bullets

Pixel Size (um): 12X12

This small pixel size allows for high resolution images to be captured with sharp details.

Maximum Supply Voltage: 17 V

A higher supply voltage allows for better performance and flexibility in powering the image sensor.

Body Width: 51.25 inch

The larger body width accommodates a full-frame array, providing a larger imaging area for capturing more detailed images.

Sensors or Transducers Type: IMAGE SENSOR,CCD

CCD sensors offer high-quality image capture with low noise, making them ideal for professional photography and imaging applications.

Body Height: 3.45 mm

The slim body height allows for easy integration into compact devices without adding unnecessary bulk.

Package Shape or Style: RECTANGULAR

The rectangular shape makes the image sensor easy to mount and align in a variety of devices and applications.

Minimum Supply Voltage: 14.8 V

Having a lower minimum supply voltage ensures that the image sensor can operate efficiently even in low power situations.

Maximum Operating Temperature: 60 °C

The high maximum operating temperature enables the image sensor to function reliably in a wide range of environmental conditions.

Horizontal Pixel: 3024

A high horizontal pixel count ensures detailed and high-resolution images with excellent clarity.

Output Type: CURRENT OUTPUT

Current output provides a direct measurement of the captured image signal, offering precise data for further processing and analysis.

Minimum Operating Temperature: -50 °C

The low minimum operating temperature allows the image sensor to function in extreme cold environments without losing performance.

Housing: CERAMIC

A ceramic housing provides excellent durability and resistance to temperature fluctuations, ensuring long-term reliability.

Dynamic Range: 84 dB

A high dynamic range allows the image sensor to capture both bright and dark details with minimal loss of information, resulting in vibrant and accurate images.

Vertical Pixel: 3024

The high vertical pixel count complements the horizontal resolution, resulting in a balanced and detailed image capture.

Body Length/Diameter: 63.8 mm

The compact body length makes the image sensor suitable for integration into smaller devices while maintaining high-quality imaging capabilities.

Termination Type: SOLDER

Solder termination ensures a reliable electrical connection, preventing signal loss and maintaining consistent performance.

Array Type: FULL FRAME

A full-frame array allows for maximum light capture and image resolution, making it suitable for high-quality photography and imaging applications.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting offers secure and stable installation of the image sensor in various devices, ensuring optimal alignment and performance.

Technical Specifications

Image Sensors KAF-09001-ABA-DP-BA attributes and parameters. Explore more Image Sensors devices from Onsemi

Specs

Additional Features:

IT HAS A OUTPUT SENSITIVITY OF 24 MICROVOLT PER ELECTRON; IT ALSO OPERATES AT DYNAMIC RANGE 75 DB AT 20 MHZ LINEAR

Array Type:

FULL FRAME

Body Width:

51.25 inch

Body Height:

3.45 mm

Body Length/Diameter:

63.8 mm

Dynamic Range:

84 dB

Horizontal Pixel:

3024

Housing:

CERAMIC

Mounting Feature:

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-50 Cel

Output Type:

Package Shape or Style:

Pixel Size (um):

12X12

Sensors or Transducers Type:

Maximum Supply Voltage:

17 V

Minimum Supply Voltage:

14.8 V

Termination Type:

SOLDER

Vertical Pixel:

3024

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20