Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MMBT3904_NL
Fairchild Semiconductor
MMBT3904_NL by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 40V, max collector current of 0.2A, and min DC current gain of 30. With a small outline package style and surface mount capability, it operates b/w -55 to 150°C and has a transition frequency of 300MHz.
COLLECTOR
.2 A
40 V
SINGLE
30
R-PDSO-G3
e3
1
3
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN
.35 W
Not Qualified
Other Transistors
YES
MATTE TIN
GULL WING
DUAL
40
SWITCHING
SILICON
300 MHz
250 ns
70 ns
MMBT3906_NL
MMBT3906_NL by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 40V and max collector current of 0.2A. With a transition frequency of 250MHz, it operates b/w -55 to 150°C, making it ideal for small outline packages in electronic devices.
PNP
250 MHz
300 ns
DS2003TMT/NOPB
National Semiconductor
DS2003TMT/NOPB by National Semiconductor is a NPN BJT transistor for switching applications. It has 7 elements, 16 terminals, and can handle a max collector-emitter voltage of 55V. With surface mount capability and a max collector current of 0.5A, it's ideal for compact electronic designs.
LOGIC LEVEL COMPATIBLE
.5 A
55 V
COMPLEX
R-PDSO-G16
7
16
Matte Tin (Sn)
DS2003TMTX/NOPB
DS2003TMTX/NOPB by National Semiconductor is a NPN BJT transistor for switching applications. It has 7 elements, 16 terminals, and a max IC of 0.5A. With a VCE of 55V, it is ideal for surface mount designs requiring high-speed switching capabilities.
SSM2220SZ-REEL
Analog Devices
Analog Devices' SSM2220SZ-REEL is a PNP BJT with 2 elements, built-in diode, and hFE of 80. Ideal for amplifier applications, it operates up to 150°C with VCE max of 36V. This surface-mount transistor has a package style of SOIC-8 and fT of 190MHz.
LOW NOISE
.02 A
36 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
80
R-PDSO-G8
2
8
AMPLIFIER
190 MHz
SSM2220SZ
Analog Devices' SSM2220SZ is a PNP BJT with 2 elements and built-in diode, ideal for amplifier applications. With a max operating temp of 150 °C, it offers hFE of 80 and VCE of 36V. This surface-mount transistor has a transition frequency of 190MHz in a small outline package.
MMBT2222AK
MMBT2222AK by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals, max. power dissipation of 0.35W, and max. collector-emitter voltage of 40V. It is used in small outline packages for applications requiring a DC current gain (hFE) of at least 40, operating temperatures up to 150°C, and a transition frequency (fT) of 300MHz.
.6 A
285 ns
35 ns
MMBT3904K
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMJT9435T3G
Onsemi
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 3 A;
3 A
30 V
90
TO-261AA
R-PDSO-G4
4
3 W
TIN
110 MHz
NSBA113EDXV6T1G
NSBA113EDXV6T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 3, VCE of 50V, and IC of 0.1A. It comes in a small outline package suitable for surface mount applications. Ideal for low-power electronic circuits requiring high gain and voltage amplification.
BUILT IN BIAS RESISTOR RATIO IS 1
.1 A
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-F6
6
.5 W
BIP General Purpose Small Signal
FLAT
DTC144WET1G
DTC144WET1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. The package is surface mountable with Gull Wing terminals in a small outline rectangular shape.
BUILT-IN BIAS RESISTOR RATIO IS 2.1
SINGLE WITH BUILT-IN RESISTOR
NOT SPECIFIED
.2 W
Matte Tin (Sn) - annealed
UMC2NT1G
UMC2NT1G by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features a max VCEsat of 0.25V, common base configuration, and built-in resistor elements. Ideal for switching applications, this transistor has a max collector-emitter voltage of 50V and operates b/w -65 to 150 °C temperatures.
BUILT-IN BIAS RESISTOR RATIO IS 1
COMMON BASE, 2 ELEMENTS WITH BUILT-IN RESISTOR
60
R-PDSO-G5
5
-65 Cel
NPN AND PNP
.15 W
Tin (Sn)
.25 V
MAT14ARZ-RL
MAT14ARZ-RL by Analog Devices is a NPN BJT transistor with 200 min hFE, 40V VCEO, and 300MHz fT. Ideal for amplifier applications, it features a small outline package with Gull Wing terminals and operates up to 150°C.
.03 A
200
MS-012AB
R-PDSO-G14
14
MAT14ARZ
MAT14ARZ by Analog Devices is a NPN BJT transistor with 4 elements and 14 terminals. It has a hFE of 200, operates up to 150°C, and handles a max voltage of 40V. Ideal for amplifier applications due to its high transition frequency of 300MHz and small outline package style.
UMA4NT1G
UMA4NT1G by Onsemi is a PNP BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max power dissipation of 0.15W, and min DC current gain of 160. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mount assembly.
BUILT IN BIAS RESISTOR
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
160
BC859CLT1G
BC859CLT1G by Onsemi is a PNP BJT with 3 terminals, hFE of 420, and max operating temp of 150 °C. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency of 100 MHz, and collector-emitter voltage of 30V.
420
TO-236AB
.3 W
100 MHz
MMBT6517LT3G
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 40 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .1 A;
350 V
15
.225 W
40 MHz
MSD601-ST1G
The Onsemi MSD601-ST1G is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.5V, min hFE of 290, and max IC of 0.1A. With GULL WING terminals and a small outline package style, it operates up to 150 °C making it suitable for various electronic circuits.
290
.5 V
PMEM4020APD,115
NXP Semiconductors
PNP; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1.3 A;
1.3 A
SINGLE WITH BUILT-IN DIODE
50
R-PDSO-G6
.6 W
150 MHz
BC849BLT3G
BC849BLT3G by Onsemi is a NPN BJT with VCEsat of 0.6V, hFE of 200, and fT of 100MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact GULL WING package.
4.5 pF
TO-236
.6 V
MMUN2231LT1G
MMUN2231LT1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and power dissipation of 0.4W. This surface-mount device comes in a small outline package suitable for high-temperature environments up to 150 °C.
.4 W
MSC2712YT1G
MSC2712YT1G by Onsemi is a NPN BJT transistor with 120 min hFE, 50 MHz fT, and 150 °C max operating temp. Ideal for amplifier applications due to its 0.2W power dissipation, 0.1A max IC, and 50V max VCE. It comes in a small outline package with Gull Wing terminals for surface mount assembly.
120
50 MHz
MUN2111T3G
MUN2111T3G by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This surface mount transistor comes in a small outline package with Gull Wing terminals.
35
.338 W
MUN5134DW1T1G
MUN5134DW1T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications, it has a max VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with Gull Wing terminals, making it suitable for surface mount designs.
BUILT-IN BIAS RESISTOR RATIO IS 0.47
2SA1576ART1G
2SA1576ART1G by Onsemi is a PNP BJT with hFE of 180, VCE of 50V, and IC of 0.1A. Ideal for amplifier applications, it's a surface-mount transistor in a small outline package with Gull Wing terminals.
180
BC859BLT1G
BC859BLT1G by Onsemi is a PNP BJT with 3 terminals, hFE of 220, and max operating temp of 150 °C. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency of 100 MHz, and collector-emitter voltage of 30V.
220
BC859BLT3G
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BCX17LT3G
BCX17LT3G by Onsemi is a PNP BJT transistor with 45V VCEO, 0.5A IC, and 150 °C max temp. Ideal for small signal applications in electronics due to its compact SOT package and high DC current gain of 40 (hFE). Suitable for surface mount PCB designs requiring low power dissipation.
45 V
BSP19AT1G
BSP19AT1G by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 350V, max power dissipation of 1.5W, and min DC current gain of 40. With a package style of small outline and surface mount capability, it is ideal for compact electronic devices requiring high-speed switching capabilities.
1.5 W
70 MHz
EMC3DXV5T5G
EMC3DXV5T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It has 2 elements, 5 terminals, hFE of 35, VCE of 50V, IC of 0.1A, and Ptot of 0.5W. This transistor operates up to 150 °C with a peak reflow temp of 260°C in a small outline package suitable for surface mount technology.
R-PDSO-F5
EMG2DXV5T1G
The Onsemi EMG2DXV5T1G is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). Ideal for switching applications in small outline packages.
EMG2DXV5T5G
The Onsemi EMG2DXV5T5G is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max operating temp of 150 °C, and min DC current gain of 80 (hFE). Ideal for switching applications in surface mount designs due to its small outline package style.
MMBT2132T3G
MMBT2132T3G by Onsemi is a NPN BJT with 30V VCEO, 0.7A IC, and hFE of 150. Ideal for small signal amplification in electronic circuits due to its high gain and low power dissipation capabilities. Its GULL WING terminals make it suitable for surface mount applications where space is limited.
.7 A
150
.342 W
MMBT2222LT3G
MMBT2222LT3G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 30V, max collector current of 0.6A, and min DC current gain of 75. With a small outline package style and peak reflow temp of 260 °C, it operates at up to 150°C and has a transition frequency of 250MHz.
75
MMBT6520LT3G
MMBT6520LT3G by Onsemi is a PNP BJT transistor with 350V VCEO, 0.5A IC, and 40MHz fT. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mount assembly. With a max operating temp of 150 °C, it offers a min hFE of 15 and 0.225W power dissipation.
MMBTA20LT1G
MMBTA20LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for amplifier applications. It has a max power dissipation of 0.225W, hFE of 40, and operates at up to 150 °C. With a max collector-emitter voltage of 40V and peak reflow temp of 260°C, it offers high performance in small outline packages for various electronic designs.
125 MHz
MMBTA43LT1G
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .5 A;
200 V
MMBTA70LT1G
MMBTA70LT1G by Onsemi is a PNP BJT transistor with 40V VCEO, 0.1A IC, and 125MHz fT. It is ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.225W. The GULL WING terminal form and SMALL OUTLINE package make it suitable for surface mount designs requiring compact components.
MMBTA93LT1G
MMBTA93LT1G by Onsemi is a PNP BJT transistor with 200V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high transition frequency and low power dissipation of 0.3W. Its GULL WING terminals and compact SMALL OUTLINE package make it suitable for surface mount designs.
25
MUN5134T1G
MUN5134T1G by Onsemi is a PNP BJT transistor with single configuration and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline package with gull wing terminals is surface mountable and features a matte tin finish.
BUILT-IN BIAS RESISTOR RATIO IS 2.14
BIP General Purpose Small Signals
PZT3906T1G
PZT3906T1G by Onsemi is a PNP BJT with 4 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for small outline packages in applications requiring a high transition frequency up to 250MHz such as signal amplification in electronic circuits.
SN75468DE4
Texas Instruments
SN75468DE4 by Texas Instruments is a NPN BJT transistor with VCEsat of 1.6V, IC of 0.5A, and VCEO of 100V. It is used for switching applications in surface mount designs due to its small outline package style and Gull Wing terminals.
100 V
MS-012AC
e4
70 Cel
0 Cel
NICKEL PALLADIUM GOLD
1.6 V
DN0150BDJ-7
Diodes Incorporated
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
SEPARATE, 2 ELEMENTS
60 MHz
DP0150ADJ-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
80 MHz
DP0150BDJ-7
DSS4140V-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;
1 A
DSS4220V-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 260 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 2 A;
2 A
20 V
260 MHz
.35 V
DSS5140V-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): 1 A;
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