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MMBT2132T3G

Onsemi

MMBT2132T3G by Onsemi

MMBT2132T3G by Onsemi is a NPN BJT with 30V VCEO, 0.7A IC, and hFE of 150. Ideal for small signal amplification in electronic circuits due to its high gain and low power dissipation capabilities. Its GULL WING terminals make it suitable for surface mount applications where space is limited.

Median Price

$0.106

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 200 parts In-Stock

1+ parts

$1.695

100+ parts

$1.678

1k+ parts

-

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200

$1.695

$1.678

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Rochester

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.092

1k+ parts

$0.077

10k+ parts

$0.068

10,000

-

$0.092

$0.077

$0.068

DigiKey

USA . 10,000 parts In-Stock

1+ parts

-

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$0.120

10,000

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$0.120

Verical

USA . 10,000 parts In-Stock

1+ parts

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1k+ parts

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$0.086

10,000

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$0.086

Distributors (In-Stock)

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Digiode

USA . 2,402 parts In-Stock

1+ parts

$0.072

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2,402

$0.072

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Vyrian

USA . 10,730 parts In-Stock

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10,730

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DigiKey Marketplace

USA . 10,000 parts In-Stock

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10,000

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Distributors (Availability)

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Corphita

USA . 1,536 parts In-Stock

1+ parts

$0.068

100+ parts

-

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1,536

$0.068

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Corohmni

South Africa . 378 parts In-Stock

1+ parts

$0.076

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378

$0.076

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Component Stockers USA

USA . 10,825 parts In-Stock

1+ parts

$0.080

100+ parts

$0.070

1k+ parts

$0.070

10k+ parts

$0.070

10,825

$0.080

$0.070

$0.070

$0.070

Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$1.695

100+ parts

$1.678

1k+ parts

$1.610

10k+ parts

-

200

$1.695

$1.678

$1.610

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AZTECH Wire

Italy . 989 parts In-Stock

1+ parts

$13.600

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989

$13.600

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QUARKTWIN TECHNOLOGY LTD

USA . 24,469 parts In-Stock

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24,469

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Continental Prestige Electronics

USA . 10,000 parts In-Stock

1+ parts

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$0.069

10,000

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$0.069

SupplyDigital Components

Austria . 7,831 parts In-Stock

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7,831

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Problanco Electronics

Mexico . 6,924 parts In-Stock

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6,924

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Kulean Microsystems

USA . 4,875 parts In-Stock

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4,875

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TANS Electronics

Latvia . 3,347 parts In-Stock

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3,347

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UHIMA Technologies

Türkiye . 813 parts In-Stock

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813

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Overview

Discover the power of the MMBT2132T3G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers unmatched performance and reliability. With Onsemi's reputation for excellence in manufacturing, this NPN transistor is perfect for a variety of applications. From amplifiers to switching circuits, this product delivers value and benefits to customers looking for high-quality components. Trust Onsemi to provide you with the best in transistor technology, setting you up for success in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

Commonly used type of transistor which allows for easy integration into various electronic circuits.

Configuration: SINGLE

Simplified circuit design and implementation for ease of use.

Surface Mount: YES

Facilitates automated assembly, reducing overall production costs.

Package Shape: RECTANGULAR

Space-efficient design for compact electronic devices.

Terminal Form: GULL WING

Provides secure and reliable connections during installation.

No. of Terminals: 6

Offers flexibility in connection options for various circuit configurations.

Maximum Power Dissipation (Abs): 0.342 W

Can handle a moderate level of power dissipation without overheating.

Package Style (Meter): SMALL OUTLINE

Ideal for applications where space is limited and compactness is important.

Minimum DC Current Gain (hFE): 150

Provides reliable amplification capabilities for signal processing.

Maximum Operating Temperature: 150 °C

Able to operate efficiently at high temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low to moderate voltage applications.

Transistor Element Material: SILICON

Offers high performance and reliability compared to other materials.

Maximum Collector Current (IC): 0.7 A

Capable of handling medium current levels in electronic circuits.

Terminal Finish: TIN

Provides good conductivity and resistance to corrosion for long-term durability.

Terminal Position: DUAL

Allows for versatile mounting options in circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Sufficient time for proper soldering during assembly processes.

Peak Reflow Temperature °C: 260

Can withstand high temperature soldering processes without damage.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT2132T3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

150

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

MMBT2132T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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