Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DP0150ALP4-7
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;
HIGH RELIABILITY
COLLECTOR
.1 A
50 V
SINGLE
120
R-PBCC-N3
e4
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
CHIP CARRIER
260
PNP
.45 W
Not Qualified
Other Transistors
YES
NICKEL PALLADIUM GOLD
NO LEAD
BOTTOM
30
SILICON
80 MHz
MBT3904DW2T1
Onsemi
MBT3904DW2T1 by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W, hFE of 30, and operates up to 150 °C. This transistor features Gull Wing terminals, small outline package style, and can handle a max collector-emitter voltage of 40V.
.2 A
40 V
SEPARATE, 2 ELEMENTS
R-PDSO-G6
e0
2
6
SMALL OUTLINE
235
NPN
.15 W
TIN LEAD
GULL WING
DUAL
AMPLIFIER
300 MHz
250 ns
70 ns
NSBC123JDXV6T5
NSBC123JDXV6T5 by Onsemi is a NPN BJT with 2 elements, built-in resistor, hFE of 80. It has max VCE of 50V, IC of 0.1A, and Pdiss of 0.5W. Ideal for switching applications due to its small outline package and silicon element material.
BUILT IN BIAS RESISTOR RATIO 21.36
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
80
R-PDSO-F6
e3
.5 W
BIP General Purpose Small Signal
TIN
FLAT
SWITCHING
QSX2TR
ROHM
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 5 A;
5 A
30 V
270
e1
TIN SILVER COPPER
10
200 MHz
2DB1689-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 1.5 A;
1.5 A
12 V
R-PDSO-G3
MATTE TIN
2DB1694-7
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): 1 A;
1 A
2DB1697-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;
2 A
R-PSSO-F3
2 W
140 MHz
2DB1714-13
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 2 A;
2DD2661-13
2DD2661-13 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 2W, hFE of 270, and fT of 170MHz. Ideal for switching applications, it has a max collector-emitter voltage of 12V and max collector current of 2A. Suitable for surface mount with matte tin finish in a small outline package style.
170 MHz
2DD2678-13
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;
3 A
R-PDSO-F4
4
DN0150ALP4-7
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;
60 MHz
DN0150BLP4-7
200
MMDT3904V-7
MMDT3904V-7 by Diodes Inc. is a NPN BJT with 2 elements, suitable for switching applications. It has a max collector-emitter voltage of 40V, max current of 0.2A, and transition frequency of 300MHz. This transistor comes in a small outline package and operates up to 150°C, making it ideal for compact electronic devices.
.2 W
MMDT3906V-7
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;
250 MHz
300 ns
NUS2401SNT1G
NUS2401SNT1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It has 3 elements, 6 terminals, hFE of 150, max power dissipation of 0.35W, and operates up to 150 °C. With a max VCE of 50V and IC of 0.2A, it's designed for surface mount in a small outline package.
BUILT IN BIAS RESISTORS
COMPLEX
150
NPN AND PNP
.35 W
MSB710-RT1G
PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
.5 A
40
2SA1774G
2SA1774G by Onsemi is a PNP BJT transistor with hFE of 120, ideal for amplifier applications. With a max voltage of 50V and max current of 0.1A, it operates at up to 150°C. Featuring a transition frequency of 140MHz, this surface-mount device in a small outline package is suitable for compact electronic designs.
DTC144WM3T5G
DTC144WM3T5G by Onsemi is a NPN BJT transistor with built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V and can handle a max collector current of 0.1A. With a small outline package style and operating temperature up to 150 °C, it is suitable for surface mount designs requiring compact components.
BUILT-IN BIAS RESISTOR RATIO IS 2.1
SINGLE WITH BUILT-IN RESISTOR
R-PDSO-F3
.6 W
Matte Tin (Sn) - annealed
EMT1DXV6T5
EMT1DXV6T5 by Onsemi is a PNP BJT with 2 elements, hFE of 120, VCE of 60V, and fT of 140MHz. Ideal for amplifier applications, it features a small outline package with 6 terminals and can handle a max collector current of 0.1A.
60 V
EMX2DXV6T5
The Onsemi EMX2DXV6T5 is a NPN BJT transistor with 2 elements, hFE of 120, and VCE of 50V. Ideal for amplifier applications, it has a transition frequency of 180MHz and can handle a collector current of 0.1A. Suitable for surface mount with a small outline package style.
180 MHz
NSTB1002DXV5T1
NSTB1002DXV5T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features cascaded configuration with 2 elements, built-in resistor, and a max collector-emitter voltage of 50V. Ideal for switching applications, this transistor has a min hFE of 30 and peak reflow temperature of 260 °C.
BUILT IN BIAS RESISTOR RATIO IS 1
CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-F5
5
NSTB1005DXV5T1
NPN AND PNP; Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-F5;
BC857CWT1G
BC857CWT1G by Onsemi is a PNP BJT transistor with VCEsat of 0.65V, hFE of 420, and fT of 100MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 45V. Suitable for surface mount designs with matte tin terminal finish.
4.5 pF
45 V
420
-55 Cel
100 MHz
.65 V
MBT35200MT1G
MBT35200MT1G by Onsemi is a PNP BJT transistor with 6 terminals, capable of handling up to 2A collector current. It has a min DC current gain of 100 and operates at a max temperature of 150°C. Ideal for switching applications due to its high transition frequency of 100MHz.
35 V
100
1.75 W
MMJT9435T1G
MMJT9435T1G by Onsemi is a PNP BJT with 3W power dissipation, hFE of 90, and max operating temp of 150 °C. Ideal for small outline applications requiring a collector-emitter voltage of 30V, collector current up to 3A, and transition frequency of 110MHz.
90
TO-261AA
R-PDSO-G4
3 W
110 MHz
MSB-709RT1G
MSB-709RT1G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.1A, and min DC current gain of 210 (hFE). This surface-mount transistor operates up to 150 °C and comes in a small outline package shape.
210
BC850CLT1G
BC850CLT1G by Onsemi is a NPN BJT transistor with VCEsat of 0.6V, hFE of 420, and fT of 100MHz. It is used in small signal applications due to its low power dissipation (0.3W), high collector-emitter voltage (45V), and compact gull wing package design.
TO-236
.3 W
.6 V
2SC4617G
2SC4617G by Onsemi is a NPN BJT transistor with hFE of 120, fT of 180 MHz, and VCE of 50V. Ideal for amplifier applications due to its small outline package style and max power dissipation of 0.125W. Suitable for surface mount designs with Gull Wing terminals.
.125 W
2SC4617T1G
2SC4617T1G by Onsemi is a NPN BJT transistor with hFE of 120, fT of 180 MHz, and VCE of 50V. Ideal for amplifier applications due to its small outline package style and max power dissipation of 0.125W. Suitable for surface mount designs with Gull Wing terminals.
2SC4617T1
The Onsemi 2SC4617T1 is a NPN BJT transistor with hFE of 120, fT of 180 MHz, and VCE of 50V. Ideal for amplifier applications due to its small outline package style and max power dissipation of 0.125W. Suitable for surface mount designs with Gull Wing terminals in a rectangular shape.
Tin/Lead (Sn/Pb)
BC847CTT1G
BC847CTT1G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and a min DC current gain of 420. It is designed for amplifier applications, featuring a small outline package style and Gull Wing terminal form for surface mount assembly. With a max operating temperature of 150°C, it offers a nominal transition frequency of 100MHz, making it suitable for high-frequency amplification needs.
MMBT2369ALT3G
MMBT2369ALT3G by Onsemi is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 15V, max current of 0.2A, and min DC current gain of 20. With a small outline package style, it's ideal for surface mount designs requiring fast switching speeds.
15 V
20
TO-236AB
18 ns
12 ns
MMBT6517LT1G
MMBT6517LT1G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 350V, max collector current of 0.1A, and min DC current gain of 15. This small outline package with Gull Wing terminals operates up to 150 °C and has a transition frequency of 40MHz.
350 V
15
.225 W
40 MHz
NSL12AWT1G
NSL12AWT1G by Onsemi is a PNP BJT transistor with 6 terminals, capable of handling up to 2A collector current. It has a max operating temperature of 150 °C and a transition frequency of 100MHz. Ideal for switching applications in small outline packages.
.65 W
DDA122LU-7-F
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO 45.45
56
DDTB122LC-7-F
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;
BUILT-IN BIAS RESISTOR RATIO IS 45.45
DDTB122TC-7-F
BUILT-IN BIAS RESISTOR
DDTB142JC-7-F
BUILT-IN BIAS RESISTOR RATIO IS 21.28
DDTB142JU-7-F
BUILT-IN BIAS RESISTANCE RATIO IS 21.28
DDTB142TC-7-F
DDTC122LE-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
DDTC122LU-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
BUILT IN BIAS RESISTOR RATIO IS 45.45
DDTD122LC-7-F
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A;
DDTD122TC-7-F
BUILT IN BIAS RESISTOR
DDTD142TC-7-F
MSD1328-ST1G
The Onsemi MSD1328-ST1G is a NPN BJT transistor with 300 min hFE, 0.5A IC, and 20V VCE. Ideal for amplifier applications, it comes in a small outline package with GULL WING terminals for surface mount assembly. Operating up to 150 °C, it has a peak reflow temperature of 260°C.
20 V
300
MUN5113T1G
MUN5113T1G by Onsemi is a PNP BJT transistor with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 50V. The package is surface mountable with GULL WING terminals in a small outline style.
BUILT-IN BIAS RESISTOR RATIO IS 1
.31 W
.25 V
BCX70J-TP
Micro Commercial Components
BCX70J-TP by Micro Commercial Components is a NPN BJT transistor for switching applications. It has a max collector-emitter voltage of 45V, hFE of 250, and fT of 250MHz. With surface mount capability and GULL WING terminals, it's ideal for compact electronic designs requiring fast switching speeds.
LOW NOISE
250
.25 W
800 ns
150 ns
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