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MMBT2222LT3G

Onsemi

MMBT2222LT3G by Onsemi

MMBT2222LT3G by Onsemi is a NPN BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 30V, max collector current of 0.6A, and min DC current gain of 75. With a small outline package style and peak reflow temp of 260 °C, it operates at up to 150°C and has a transition frequency of 250MHz.

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Lifecycle Status

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3

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1k+

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Chip Stock

USA . 412,500 parts In-Stock

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Vyrian

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Advanced Electronics

New Zealand . 61 parts In-Stock

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$0.364

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$0.328

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AZTECH Wire

Italy . 844 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,218 parts In-Stock

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Problanco Electronics

Mexico . 8,190 parts In-Stock

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Kulean Microsystems

USA . 8,016 parts In-Stock

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SupplyDigital Components

Austria . 7,644 parts In-Stock

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TANS Electronics

Latvia . 5,415 parts In-Stock

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UHIMA Technologies

Türkiye . 861 parts In-Stock

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Corohmni

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Overview

Enhance your electronic projects with the high-quality MMBT2222LT3G by Onsemi, a top-tier manufacturer known for delivering reliable components. As a small signal bipolar junction transistor, this NPN transistor is perfect for switching applications. With its compact design and impressive performance, this transistor offers exceptional value and versatility for various projects. Upgrade your designs with the MMBT2222LT3G and experience the benefits of superior quality and efficiency that Onsemi products provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging, ensuring longevity and affordability of the product.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good efficiency and performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast response times and efficient operation.

Maximum Power Dissipation (Abs): 0.225 W

The high maximum power dissipation allows the transistor to handle higher power levels without overheating.

Maximum Operating Temperature: 150 °C

Can operate efficiently at temperatures up to 150 °C, making it suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 30 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels, increasing its versatility.

Maximum Collector Current (IC): 0.6 A

Capable of handling high collector currents up to 0.6 A, making it suitable for a wide range of applications.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for faster switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT2222LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

75

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MMBT2222LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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