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200 W Power Bipolar Junction Transistors (BJT) 30

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BUF420M by STMicroelectronics

BUF420M

STMicroelectronics

BUF420M by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max VCEsat of 2V, supports up to 200W power dissipation, and operates at a max temp of 200 °C. Ideal for high-performance electronic circuits requiring robust performance.

COLLECTOR

30 A

450 V

SINGLE

TO-3

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

200 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

PIN/PEG

BOTTOM

SWITCHING

SILICON

.1 MHz

3620 ns

2 V

NJL4281DG by Onsemi

NJL4281DG

Onsemi

NJL4281DG by Onsemi is a NPN BJT transistor with 350V VCEO, 15A IC, and 200W Ptot. Ideal for amplifier applications due to its hFE of 10 and fT of 35MHz. Packaged in PLASTIC/EPOXY with FLANGE MOUNT style for through-hole mounting.

HIGH RELIABILITY

15 A

350 V

SINGLE WITH BUILT-IN DIODE

10

TO-264

R-PSFM-T5

e3

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

200 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

35 MHz

NJL4302DG by Onsemi

NJL4302DG

Onsemi

NJL4302DG by Onsemi is a PNP BJT transistor with 5 terminals. It has a max power dissipation of 200W, operating temp of 150 °C, and max collector-emitter voltage of 350V. Ideal for amplifier applications due to its single configuration with built-in diode and silicon element material.

HIGH RELIABILITY

15 A

350 V

SINGLE WITH BUILT-IN DIODE

10

TO-264

R-PSFM-T5

e3

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

200 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

35 MHz

2STA2120 by STMicroelectronics

2STA2120

STMicroelectronics

2STA2120 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

200 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

2STC5948 by STMicroelectronics

2STC5948

STMicroelectronics

2STC5948 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

200 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

NJW21193G by Onsemi

NJW21193G

Onsemi

NJW21193G by Onsemi is a PNP BJT transistor with 250V VCEO, 16A IC, and 200W power dissipation. Ideal for amplifier applications, it has a min hFE of 8 and operates up to 150°C. The package style is flange mount with a rectangular shape and through-hole terminals.

16 A

250 V

SINGLE

8

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW1302A by Onsemi

MJW1302A

Onsemi

The Onsemi MJW1302A is a PNP BJT transistor with 230V VCE, 15A IC, and 200W power dissipation. Ideal for amplifier applications, it has a min hFE of 12 and operates up to 150 °C. The package style is flange mount with a rectangular shape and through-hole terminals.

COLLECTOR

15 A

230 V

SINGLE

12

TO-247AD

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

MJW21193 by Onsemi

MJW21193

Onsemi

MJW21193 by Onsemi is a PNP BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.

ISOLATED

16 A

250 V

SINGLE

8

TO-247

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW21194 by Onsemi

MJW21194

Onsemi

MJW21194 by Onsemi is a NPN Power BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and 4MHz transition frequency. The transistor's plastic/epoxy package body and flange mount style make it suitable for through-hole mounting in various electronic devices.

ISOLATED

16 A

250 V

SINGLE

8

TO-247

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW21195 by Onsemi

MJW21195

Onsemi

MJW21195 by Onsemi is a PNP BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with through-hole terminals.

COLLECTOR

16 A

250 V

SINGLE

8

TO-247AD

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW21196 by Onsemi

MJW21196

Onsemi

MJW21196 by Onsemi is a NPN Power BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and silicon transistor element material. The package style is flange mount with through-hole terminals.

COLLECTOR

16 A

250 V

SINGLE

8

TO-247AD

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW3281A by Onsemi

MJW3281A

Onsemi

MJW3281A by Onsemi is a NPN BJT transistor with 230V max collector-emitter voltage, 15A max collector current, and 200W max power dissipation. Ideal for amplifier applications due to its single configuration and silicon element material. The package style is flange mount with through-hole terminals.

COLLECTOR

15 A

230 V

SINGLE

12

TO-247AD

R-PSFM-T3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

BUT70W by STMicroelectronics

BUT70W

STMicroelectronics

BUT70W by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200 W, operates up to 150 °C, and supports collector-emitter voltages of 125 V. Ideal for high-performance electronic circuits.

125 V

SINGLE

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BUX98APW by STMicroelectronics

BUX98APW

STMicroelectronics

BUX98APW by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200 W, operates up to 150 °C, and supports collector-emitter voltages of 450 V. Ideal for high-performance electronic circuits.

24 A

450 V

SINGLE

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

MJL1302AG by Onsemi

MJL1302AG

Onsemi

The Onsemi MJL1302AG is a PNP power BJT with 200W max power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications, it has a min hFE of 45 and operates up to 150°C. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.

ISOLATED

15 A

260 V

SINGLE

45

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

NJL1302D by Onsemi

NJL1302D

Onsemi

NJL1302D by Onsemi is a PNP BJT with 200W power dissipation, 260V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration with built-in diode. Features include 45 min DC current gain (hFE) and 30MHz nominal transition frequency.

HIGH RELIABILITY

15 A

260 V

SINGLE WITH BUILT-IN DIODE

45

TO-264

R-PSFM-T5

e0

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

PNP

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

NJL3281D by Onsemi

NJL3281D

Onsemi

NJL3281D by Onsemi is a NPN BJT with 260V VCEO, 15A IC, and 200W Ptot. Ideal for amplifier applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.

HIGH RELIABILITY

15 A

260 V

SINGLE WITH BUILT-IN DIODE

45

TO-264

R-PSFM-T5

e0

1

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

NPN

200 W

Not Qualified

Other Transistors

NO

TIN LEAD

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

2N5885G by Onsemi

2N5885G

Onsemi

The Onsemi 2N5885G is a NPN BJT transistor with max. power dissipation of 200W, max. collector current of 25A, and max. collector-emitter voltage of 60V. It is used for switching applications due to its single configuration and high transition frequency of 4MHz in a round package style.

COLLECTOR

25 A

60 V

SINGLE

4

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

4 MHz

2N5302G by Onsemi

2N5302G

Onsemi

The Onsemi 2N5302G is a NPN power BJT with max. collector-emitter voltage of 60V and max. collector current of 30A. It has a min. DC current gain of 5 and can dissipate up to 200W power. Ideal for switching applications, it operates b/w -65 °C to 200°C temperatures with a transition frequency of 2MHz.

COLLECTOR

30 A

60 V

SINGLE

5

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

2 MHz

2N5883G by Onsemi

2N5883G

Onsemi

Onsemi's 2N5883G is a PNP BJT with max. collector current of 25A and power dissipation of 200W. Ideal for switching applications, it operates at up to 200°C with a max. VCE of 60V. The transistor features a single configuration in round package style, making it suitable for high-power electronic systems.

COLLECTOR

25 A

60 V

SINGLE

4

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

PNP

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

4 MHz

2N6338G by Onsemi

2N6338G

Onsemi

The Onsemi 2N6338G is a NPN BJT transistor with max. collector-emitter voltage of 100V, max. collector current of 25A, and max. power dissipation of 200W. Ideal for switching applications due to its single configuration and high transition frequency of 40MHz in a round package shape.

COLLECTOR

25 A

100 V

SINGLE

12

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

40 MHz

MJ11012G by Onsemi

MJ11012G

Onsemi

MJ11012G by Onsemi is a NPN BJT with 200W power dissipation, 60V max collector-emitter voltage, and 30A max collector current. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with round shape and matte tin terminal finish.

COLLECTOR

30 A

60 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

200

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

AMPLIFIER

SILICON

4 MHz

MJ15002G by Onsemi

MJ15002G

Onsemi

MJ15002G by Onsemi is a PNP BJT transistor with 200W power dissipation, 140V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with round shape and bottom terminal position.

COLLECTOR

15 A

140 V

SINGLE

25

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

260

PNP

200 W

Not Qualified

Other Transistors

NO

TIN

PIN/PEG

BOTTOM

AMPLIFIER

SILICON

2 MHz

MJ15011G by Onsemi

MJ15011G

Onsemi

The Onsemi MJ15011G is a NPN BJT transistor with 200W power dissipation, 250V max collector-emitter voltage, and 10A max collector current. Ideal for switching applications due to its single configuration and silicon element material. Package style is flange mount with bottom terminal position.

COLLECTOR

10 A

250 V

SINGLE

15

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

260

NPN

200 W

Not Qualified

Other Transistors

NO

TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

MJL21195G by Onsemi

MJL21195G

Onsemi

MJL21195G by Onsemi is a PNP BJT with 200W power dissipation, 250V max collector-emitter voltage, and 16A max collector current. Ideal for amplifier applications due to its single configuration and 4MHz transition frequency. The transistor's package style is flange mount with through-hole terminals in a rectangular shape.

16 A

250 V

SINGLE

8

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJL21196G by Onsemi

MJL21196G

Onsemi

The Onsemi MJL21196G is a NPN BJT transistor with 200W power dissipation, ideal for amplifier applications. It has a max collector-emitter voltage of 250V, max current of 16A, and transition frequency of 4MHz. The package style is flange mount with through-hole terminals in a rectangular shape.

16 A

250 V

SINGLE

8

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

MJW21194G by Onsemi

MJW21194G

Onsemi

MJW21194G by Onsemi is a NPN Power BJT with 250V VCEO, 16A IC, and 200W Ptot. Ideal for amplifier applications due to its high power dissipation capability and low hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-temperature environments up to 150°C.

ISOLATED

16 A

250 V

SINGLE

8

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

4 MHz

HD1750JL by STMicroelectronics

HD1750JL

STMicroelectronics

HD1750JL by STMicroelectronics is a powerful NPN BJT designed for amplifiers, featuring a max power dissipation of 200W and an operating temp up to 150 °C. It supports collector-emitter voltages of 800V and handles currents up to 24A. Ideal for high-performance applications in electronics.

24 A

800 V

SINGLE

5.5

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

HD1760JL by STMicroelectronics

HD1760JL

STMicroelectronics

HD1760JL by STMicroelectronics is a powerful NPN BJT designed for amplifiers, featuring a max power dissipation of 200W and an operating temp up to 150 °C. It supports collector-emitter voltages of 800V and handles currents up to 36A. Ideal for high-performance applications in various electronic circuits.

36 A

800 V

SINGLE

5

TO-264AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

HD1530JL by STMicroelectronics

HD1530JL

STMicroelectronics

HD1530JL by STMicroelectronics is a powerful NPN BJT designed for amplifying applications. It features a max power dissipation of 200W, operates up to 150 °C, and supports collector-emitter voltages up to 700V. Ideal for high-performance electronic circuits.

26 A

700 V

SINGLE

5

TO-264AA

R-PSFM-T3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON