Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2SD1803T-TL-E
Onsemi
2SD1803T-TL-E by Onsemi is a PNP power bipolar junction transistor (BJT) with a max collector-emitter voltage of 50V and a max collector current of 5A. It is commonly used for switching applications due to its low VCEsat of 0.55V and high transition frequency of 130MHz.
COLLECTOR
5 A
60 pF
50 V
SINGLE
35
R-PSSO-G2
e6
1
2
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
PNP
1 W
20 W
Other Transistors
YES
TIN BISMUTH
GULL WING
30
SWITCHING
SILICON
130 MHz
.55 V
STD878T4
STMicroelectronics
STD878T4 by STMicroelectronics is a NPN Power BJT with 30V VCEO, 5A IC, and 15W Ptot. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating up to 150 °C, it offers a min hFE of 70 and matte tin finish.
30 V
70
TO-252
e3
NPN
15 W
Not Qualified
MATTE TIN
ZX5T953GQTA
Diodes Incorporated
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 100 V;
HIGH RELIABILITY
100 V
15
R-PDSO-G4
4
AEC-Q101
DUAL
125 MHz
FZT951QTC
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Package Style (Meter): SMALL OUTLINE;
60 V
10
120 MHz
FZT953QTA
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): 5 A; Reference Standard: AEC-Q101;
2SB1203S-H
The Onsemi 2SB1203S-H is a NPN BJT transistor with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. With a power dissipation of 20W, it's suitable for various power electronics designs.
40 pF
R-PSIP-T3
3
IN-LINE
NO
THROUGH-HOLE
180 MHz
.4 V
2SB1203S-TL-H
The Onsemi 2SB1203S-TL-H is a NPN Power BJT for switching applications. Features include VCEsat of 0.4V, IC of 5A, and hFE of 35. With a max operating temperature of 150°C, it's ideal for high-power switching circuits in various electronic devices.
2SB1203T-TL-H
Onsemi's 2SB1203T-TL-H is a NPN BJT transistor with VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications, it has a max operating temp of 150 °C and fT of 180MHz. With GULL WING terminals in a SMALL OUTLINE package, it offers high power dissipation at 20W.
2SD1803T-H
The Onsemi 2SD1803T-H is a PNP BJT transistor with VCEsat of 0.55V, IC of 5A, and hFE of 35. Ideal for switching applications, it has a max power dissipation of 20W and operates at temperatures up to 150°C. The package style is in-line with through-hole terminals.
2SA2012-TD-E
2SA2012-TD-E by Onsemi is a PNP BJT transistor for switching applications. With hFE of 200, it can handle up to 5A collector current and 3.5W power dissipation. Operating at max 150 °C, this transistor has a fT of 350MHz making it suitable for high-frequency applications.
200
TO-243
R-PSSO-F3
3.5 W
Tin/Bismuth (Sn/Bi)
FLAT
350 MHz
2SB1302T-TD-E
Onsemi's 2SB1302T-TD-E is a PNP BJT transistor with max. collector-emitter voltage of 20V and max. collector current of 5A. With a min. DC current gain of 60, it's ideal for switching applications in small outline packages at up to 150 °C operating temperature.
20 V
60
1.3 W
320 MHz
BUL138
BUL138 by STMicroelectronics is a NPN Power BJT transistor with 400V VCE, 5A IC, and 1V VCEsat. Ideal for switching applications, it has a max power dissipation of 80W and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
400 V
8
TO-220AB
R-PSFM-T3
FLANGE MOUNT
80 W
70 W
1500 ns
1 V
TIP122FP
TIP122FP by STMicroelectronics is a NPN power BJT with 100V VCEO, 5A IC, and 2W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode and resistor. The transistor operates up to 150°C and comes in a rectangular package with through-hole terminals.
ISOLATED
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
1000
2 W
BUL903ED
BUL903ED by STMicroelectronics is a NPN Power BJT with 400V VCE, 5A IC, and 70W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating up to 150 °C, it has hFE of min. 20 and comes in a flange mount style with matte tin terminals.
SINGLE WITH BUILT-IN DIODE
20
Matte Tin (Sn)
BUL138FP
BUL138FP by STMicroelectronics is a NPN Power BJT with 400V VCEO, 5A IC, and 33W Ptot. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The package style is flange mount with through-hole terminals.
33 W
KSD1691YSTSTU
Fairchild Semiconductor
KSD1691YSTSTU by Fairchild Semiconductor is a NPN Power BJT with 20W power dissipation, hFE of 160, and 60V VCE. Ideal for applications requiring a single configuration transistor in through-hole package style, such as power amplifiers or voltage regulators.
160
TO-126
2STN2540-A
2STN2540-A by STMicroelectronics is a PNP BJT transistor with 40V VCE, 5A IC, and 1.6W power dissipation. Ideal for switching applications in small outline packages due to its high DC current gain of 50 (hFE). The Gull Wing terminal form and matte tin finish make it suitable for surface mount designs.
40 V
50
1.6 W
BUL49DFP
BUL49DFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 34W, a collector-emitter voltage of 450V, and operates up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
450 V
34 W
2STF1550
2STF1550 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.4W, a collector current of up to 5A, and operates at temperatures up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.
90
R-PDSO-F4
1.4 W
BU900TP
NPN; Configuration: DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 370 V;
370 V
DARLINGTON, 3 TRANSISTORS WITH BUILT-IN DIODE AND RESISTOR
7000
NOT SPECIFIED
55 W
STN878
STN878 by STMicroelectronics is a compact NPN BJT designed for switching applications. It features a max power dissipation of 1.6 W, operates up to 150 °C, and supports collector currents up to 5 A. Ideal for efficient power management in electronic circuits.
BUT11AI,127
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 5 A; Maximum Power Dissipation Ambient: 100 W;
14
100 W
4800 ns
1000 ns
1.5 V
BUT11APX,127
NXP Semiconductors' BUT11APX,127 is a NPN BJT transistor with 450V max collector-emitter voltage and 5A max collector current. It has a 32W power dissipation for switching applications at up to 150°C operating temperature. The package is rectangular with through-hole terminals in plastic/epoxy material.
32 W
TIP127-BP
Micro Commercial Components
TIP127-BP by Micro Commercial Components is a PNP Power BJT with hFE of 1000, VCEO of 100V, and IC of 5A. Ideal for applications requiring high current amplification in electronic circuits. Package style: Flange Mount, Terminal finish: Matte Tin, and operating temp up to 150°C.
STN888
STN888 by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and a collector current of 5 A. It operates at up to 150 °C with a collector-emitter voltage of 30 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.
Matte Tin (Sn) - annealed
STSA851-AP
STSA851-AP by STMicroelectronics is a NPN BJT transistor with 60V VCEO, 5A IC, and 130MHz fT. Ideal for switching applications, it has a single configuration in a cylindrical package with matte tin finish. Operating up to 150°C, it offers a min hFE of 30 and dissipation of 1.1W.
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
1.1 W
BOTTOM
STSA851
STSA851 by STMicroelectronics is a NPN BJT transistor with 60V VCEO, 5A IC, and 130MHz fT. Ideal for switching applications, it has a max power dissipation of 1.1W in a cylindrical package with matte tin finish for through-hole mounting.
STD1805-1
STD1805-1 from STMicroelectronics is a robust NPN BJT designed for switching applications, featuring a max power dissipation of 15W and collector current of 5A. It operates efficiently up to 150 °C with a collector-emitter voltage of 60V. Ideal for various electronic circuits, it ensures reliable performance in compact designs.
TO-251AA
150 MHz
STD1805T4
STD1805T4 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 15W, collector current of 5A, and operates up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.
TO-252AA
STSA1805
STSA1805 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.1W, operates up to 150 °C, and supports collector-emitter voltages up to 60V. Ideal for efficient circuit designs in various electronic devices.
2STN2550
2STN2550 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 5 A, a collector-emitter voltage of 50 V, and operates up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.
80
BUL1203EFP
BUL1203EFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 550 V, a power dissipation of 36 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.
550 V
9
36 W
BULB49DT4
BULB49DT4 by STMicroelectronics is an NPN power BJT designed for efficient switching applications. It features a max collector-emitter voltage of 450V, 80W power dissipation, and operates up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.
TO-263AB
245
MJD200T4G
MJD200T4G by Onsemi is a NPN BJT transistor with 5A max collector current, 13W power dissipation, and 65MHz transition frequency. Ideal for amplifier applications, it features a small outline package, matte tin terminal finish, and can operate up to 150°C.
25 V
13 W
AMPLIFIER
65 MHz
MJD200G
The Onsemi MJD200G is a NPN BJT transistor with 5A IC, 25V VCE, and 13W Pd. Ideal for amplifier applications, it has a hFE of 10 and fT of 65MHz. The GULL WING terminal form and SMALL OUTLINE package make it suitable for surface mount designs.
MJE210G
MJE210G by Onsemi is a PNP BJT transistor with 40V VCE, 5A IC, and 1.5W power dissipation. Ideal for amplifier applications due to its high transition frequency of 65MHz and single configuration in a plastic/epoxy package. Operating up to 150°C, it has through-hole terminals with matte tin finish.
TO-225
1.5 W
TIP125G
TIP125G by Onsemi is a PNP power BJT with 65W max power dissipation, ideal for amplifier applications. Featuring a Darlington configuration with built-in diode and resistor, it has a hFE of 1000 and can handle up to 5A collector current. With a max operating temperature of 150°C and collector-emitter voltage of 60V, this transistor is suitable for various electronic projects.
65 W
TIP120-BP
TIP120-BP by Micro Commercial Components is a NPN Darlington BJT with hFE of 1000, VCE of 60V, and IC of 5A. Ideal for amplifier applications, it features a plastic/epoxy body, through-hole terminals, and matte tin finish.
DARLINGTON
TIP122-BP
TIP122-BP by Micro Commercial Components is a NPN Darlington BJT with hFE of 1000, VCE of 100V, and IC of 5A. It is used in power applications requiring high current gain and voltage handling capabilities. The package style is flange mount with through-hole terminals for easy installation.
MJF127G
The Onsemi MJF127G is a PNP Power BJT with Darlington configuration, built-in diode, and resistor. It has a max power dissipation of 30W and can handle up to 5A collector current. Ideal for switching applications in various industries due to its high DC current gain of 2000.
2000
30 W
UL RECOGNIZED
2N6497G
The Onsemi 2N6497G is a NPN power BJT with max. collector-emitter voltage of 250V, max. collector current of 5A, and max. power dissipation of 80W. Ideal for switching applications due to its single configuration and high transition frequency of 5MHz in a rectangular package style.
LEADFORM OPTIONS ARE AVAILABLE
250 V
TIN
5 MHz
BUL45G
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 12 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 5 A;
7
75 W
12 MHz
MJE18004G
MJE18004G by Onsemi is a NPN BJT transistor with 450V VCEO, 5A IC, and 75W Ptot. Ideal for switching applications, it has a min hFE of 6 and operates up to 150°C. The package style is flange mount with through-hole terminals in a rectangular shape.
6
13 MHz
MJE18004D2G
MJE18004D2G by Onsemi is a NPN BJT transistor with 450V VCE, 5A IC, and 75W Ptot. Ideal for switching applications, it has a hFE of 6 and operates up to 150 °C. Its package style is flange mount with through-hole terminals.
BUILT-IN EFFICIENT ANTISATURATION NETWORK
TIP126G
TIP126G by Onsemi is a PNP power BJT with Darlington configuration, ideal for amplifier applications. It features a max collector-emitter voltage of 80V, max collector current of 5A, and min DC current gain of 1000. With a package style of flange mount and max power dissipation of 65W, it offers high performance in various electronic designs.
80 V
MJE210TG
MJE210TG by Onsemi is a PNP BJT with 15W power dissipation, 40V max. collector-emitter voltage, and 5A max. collector current. Ideal for amplifier applications due to its 65MHz transition frequency and single terminal configuration in a rectangular package style.
MJE210T
MJE210T by Onsemi is a PNP BJT transistor with 40V VCEO, 5A IC, and 1.5W power dissipation. Ideal for amplifier applications due to its hFE of 10 and fT of 65MHz. Packaged in plastic/epoxy with through-hole terminals, it operates up to 150 °C.
e0
235
TIN LEAD
2N5154S1
2N5154S1 from STMicroelectronics is an NPN power BJT ideal for switching applications. It features a max VCEsat of 1.5V, 35W power dissipation, and operates b/w -65 °C to 200 °C. Its compact no-lead design enhances efficiency in various electronic circuits.
250 pF
40
R-XBCC-N3
200 Cel
-65 Cel
UNSPECIFIED
CHIP CARRIER
3.3 W
35 W
NO LEAD
1300 ns
500 ns
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