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5 A Power Bipolar Junction Transistors (BJT) 55

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2ST1480FP by STMicroelectronics

2ST1480FP

STMicroelectronics

2ST1480FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max power dissipation of 25W, collector-emitter voltage of 80V, and operates up to 150 °C. Ideal for efficient control in electronic circuits.

ISOLATED

5 A

80 V

SINGLE

50

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

25 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

120 MHz

STS05DTP03 by STMicroelectronics

STS05DTP03

STMicroelectronics

STS05DTP03 from STMicroelectronics is a versatile NPN/PNP BJT designed for switching applications. It features a max power dissipation of 2W, supports up to 5A collector current, and operates at temperatures up to 150 °C. Its compact SO package ensures efficient surface mounting.

5 A

30 V

SEPARATE, 2 ELEMENTS

80

R-PDSO-G8

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

2 W

Not Qualified

BIP General Purpose Small Signal

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

PBSS5540Z/ZLF by Nexperia

PBSS5540Z/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Reference Standard: IEC-60134;

COLLECTOR

5 A

40 V

SINGLE

250

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

120 MHz

PBSS5540Z/ZLX by Nexperia

PBSS5540Z/ZLX

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 5 A; Package Style (Meter): SMALL OUTLINE;

COLLECTOR

5 A

40 V

SINGLE

250

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

120 MHz

2SB1203T-H by Onsemi

2SB1203T-H

Onsemi

The Onsemi 2SB1203T-H is a NPN Power BJT with max VCEsat of 0.4V, IC of 5A, and hFE of 35. Ideal for switching applications due to its high transition frequency of 180MHz and low collector-emitter voltage of 50V. The transistor comes in a plastic/epoxy package with through-hole terminals, making it suitable for various power electronics designs.

COLLECTOR

5 A

40 pF

50 V

SINGLE

35

R-PSIP-T3

e6

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NPN

1 W

20 W

Other Transistors

NO

TIN BISMUTH

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

180 MHz

.4 V

FMMT411FDBW-7 by Diodes Incorporated

FMMT411FDBW-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

17 pF

15 V

SINGLE

100

S-PDSO-N3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

NPN

1.8 W

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

110 MHz

.1 V

FZT855QTA by Diodes Incorporated

FZT855QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 90 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 5 A;

COLLECTOR

5 A

22 pF

150 V

SINGLE

15

R-PDSO-G4

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

3 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

GULL WING

DUAL

SILICON

90 MHz

.355 V