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153 Flash Memory 98

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MTFC128GAPALNS-AAT by Micron Technology

MTFC128GAPALNS-AAT

Micron Technology

MTFC128GAPALNS-AAT by Micron Technology is a 128GX8 flash memory with 1099511627776 bit density. Operating in synchronous mode, it has a thin profile and fine pitch package style. Ideal for industrial applications, it supports parallel programming with a supply voltage range of 2.7V to 3.6V.

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC128GAPALNS-AIT by Micron Technology

MTFC128GAPALNS-AIT

Micron Technology

MTFC128GAPALNS-AIT by Micron Technology is a 128GX8 flash memory with 1099511627776 bit density. Operating in synchronous mode, it has a temperature range of -40 to 85 °C and supports industrial applications. With a thin profile and fine pitch package style, it features 153 terminals in a grid array shape for surface mount assembly.

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC32GAPALBH-AAT by Micron Technology

MTFC32GAPALBH-AAT

Micron Technology

MTFC32GAPALBH-AAT by Micron Technology is a 32GX8 flash memory with 34359738368 words capacity. It operates in synchronous mode, has a thin profile package style, and supports industrial temperature grade. Ideal for applications requiring high memory density and parallel data transfer at temperatures ranging from -40 to 105°C.

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC32GAPALBH-AIT by Micron Technology

MTFC32GAPALBH-AIT

Micron Technology

Micron Technology's MTFC32GAPALBH-AIT is a 32GX8 flash memory with 274877906944 bit memory density. Operating in synchronous mode, it has a thin profile and fine pitch grid array package style. Ideal for industrial applications, it supports parallel programming with a supply voltage range of 2.7V to 3.6V.

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC64GAPALBH-AAT by Micron Technology

MTFC64GAPALBH-AAT

Micron Technology

MTFC64GAPALBH-AAT by Micron Technology is a 64GX8 flash memory with 549755813888 bit density. Operating in synchronous mode, it has a thin profile grid array package style and operates b/w -40 to 105 °C. Ideal for industrial applications requiring high-speed data storage and retrieval.

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC64GAPALBH-AIT by Micron Technology

MTFC64GAPALBH-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC64GASAONS-AITES by Micron Technology

MTFC64GASAONS-AITES

Micron Technology

MTFC64GASAONS-AITES by Micron Technology is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at 52 MHz, it has a thin profile and fine pitch package suitable for industrial applications. With a voltage range of 2.7V to 3.6V, this synchronous memory offers reliable performance in temperatures from -40°C to 95°C.

52 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

95 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.461 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC16GLWDM-4MAITZ by Micron Technology

MTFC16GLWDM-4MAITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

52 MHz

R-PBGA-B153

13 mm

137438953742 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC4GLGDM-AITA by Micron Technology

MTFC4GLGDM-AITA

Micron Technology

MTFC4GLGDM-AITA by Micron Technology is a 4GX8 NAND flash memory with 34359738368 bit density. Operating in synchronous mode at up to 52 MHz clock frequency, it offers 4294967296 words capacity for industrial applications. With a thin profile and fine pitch package style, this memory IC supports parallel communication at a voltage range of 2.7V to 3.6V.

52 MHz

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.374 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC4GMWDM-3MAITA by Micron Technology

MTFC4GMWDM-3MAITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; No. of Words Code: 4G;

52 MHz

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC8GLGDM-AITZ by Micron Technology

MTFC8GLGDM-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.374 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC8GLWDM-AITA by Micron Technology

MTFC8GLWDM-AITA

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; Type: NAND TYPE;

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC8GLWDM-AITZ by Micron Technology

MTFC8GLWDM-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

52 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.364 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC8GAMALBH-IT by Micron Technology

MTFC8GAMALBH-IT

Micron Technology

MTFC8GAMALBH-IT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at up to 200 MHz. It features a thin profile grid array package and is suitable for industrial applications requiring high memory density and fast data transfer speeds.

200 MHz

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC128GAPALNS-IT by Micron Technology

MTFC128GAPALNS-IT

Micron Technology

MTFC128GAPALNS-IT by Micron Technology is a 128GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz clock frequency. It features a thin profile grid array package suitable for industrial applications requiring high memory density and wide temperature range support.

200 MHz

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC4GLDEA-0MWTTR by Micron Technology

MTFC4GLDEA-0MWTTR

Micron Technology

Micron Technology's MTFC4GLDEA-0MWTTR is a 3.3V MLC NAND flash memory with 4GX8 organization, operating at up to 52 MHz clock frequency. With a compact rectangular package style and very thin profile, it is ideal for applications requiring high-speed synchronous operation in devices such as smartphones and tablets.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MTFC16GAPALBH-AATTR by Micron Technology

MTFC16GAPALBH-AATTR

Micron Technology

MTFC16GAPALBH-AATTR by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. It operates synchronously at up to 200 MHz clock frequency, suitable for applications requiring high-speed data storage and retrieval. With a thin profile and fine pitch grid array package style, it offers compact design flexibility for various electronic devices.

200 MHz

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

105 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

1.2 mm

3.6 V

2.7 V

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC8GAMALBH-AITTR by Micron Technology

MTFC8GAMALBH-AITTR

Micron Technology

MTFC8GAMALBH-AITTR by Micron Technology is a NAND flash memory with 8GX8 organization, 200 MHz clock frequency, and 85°C max operating temp. Ideal for automotive applications due to AEC-Q104 screening level, thin profile package style, and wide temperature range from -40°C to 85°C.

4

200 MHz

NO

NO

5

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

YES

AEC-Q104

1.2 mm

3.6 V

2.7 V

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

NAND TYPE

11.5 mm

MTFC8GLWDM-AITATR by Micron Technology

MTFC8GLWDM-AITATR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: LFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B153;

52 MHz

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

LFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC32GAPALBH-IT by Micron Technology

MTFC32GAPALBH-IT

Micron Technology

Micron Technology's MTFC32GAPALBH-IT is a 32GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a thin profile grid array package suitable for industrial applications. With a wide temperature range (-40 to 85°C) and high memory density (274877906944 bit), it is ideal for demanding environments requiring fast data storage and retrieval.

200 MHz

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

IS22TF32G-JCLA2 by Integrated Silicon Solution

IS22TF32G-JCLA2

Integrated Silicon Solution

IS22TF32G-JCLA2 by Integrated Silicon Solution is a 32GX8 TLC NAND flash memory with 3.3V programming voltage, 200 MHz clock frequency, and 105°C max operating temp. Ideal for applications requiring high-speed data storage in automotive electronics due to AEC-Q100 screening level and compact grid array package design.

200 MHz

R-PBGA-B153

13 mm

274877906944 bit

FLASH

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

NOT SPECIFIED

3.3

AEC-Q100

1 mm

.00003 Amp

55 mA

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

TLC NAND TYPE

11.5 mm

HARDWARE/SOFTWARE

MTFC8GAKAJCN-1MWT by Micron Technology

MTFC8GAKAJCN-1MWT

Micron Technology

MTFC8GAKAJCN-1MWT by Micron Technology is a 8GX8 MLC NAND flash memory with 68719476736 bit density. It operates at 3.3V, has a temperature range of -25 to 85 °C, and uses synchronous mode. Ideal for applications requiring high memory capacity in compact devices.

ALSO AVAILABE WITH TAPE AND REEL

NO

NO

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NO

MLC NAND TYPE

11.5 mm

MTFC4GACAJCN-1MWT by Micron Technology

MTFC4GACAJCN-1MWT

Micron Technology

MTFC4GACAJCN-1MWT by Micron Technology is a 4GX8 MLC NAND flash memory with 3.3V supply voltage, operating at -25 to 85 °C. It features a grid array package style, open-drain output, and very thin profile for applications requiring high-density storage in compact devices.

ALSO AVAILABE WITH TAPE AND REEL

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MTFC8GLWDM-3LAATZ by Micron Technology

MTFC8GLWDM-3LAATZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

OPEN-DRAIN

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

YES

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

11.5 mm

MTFC4GMDEA-1MWT by Micron Technology

MTFC4GMDEA-1MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN SILVER COPPER;

52 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MTFC4GLDEA-0MWT by Micron Technology

MTFC4GLDEA-0MWT

Micron Technology

FLASH CARD; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

52 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

MTFC8GLDEA-1MWT by Micron Technology

MTFC8GLDEA-1MWT

Micron Technology

MTFC8GLDEA-1MWT by Micron Technology is a 3.3V MLC NAND Flash Memory with 8GX8 organization, operating at up to 52 MHz clock frequency. It features a very thin profile, fine pitch grid array package and is suitable for applications requiring high memory density and parallel operation in devices with limited space constraints.

52 MHz

NO

NO

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER NICKEL

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

S40410081B1B1I000 by Cypress Semiconductor

S40410081B1B1I000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B1I000 is a 8GX8 MLC NAND Flash Memory with 68719476736 bit memory density. Operating at -40 to 85 °C, it has a supply voltage range of 2.7-3.6 V and features synchronous operation for industrial applications.

4

R-PBGA-B153

13 mm

68719476736 bit

FLASH

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410081B1B1W000 by Cypress Semiconductor

S40410081B1B1W000

Cypress Semiconductor

Cypress Semiconductor's S40410081B1B1W000 is a synchronous flash memory with 8GX8 organization, MLC NAND type, and 68719476736-bit memory density. It operates at 3V with a temperature range of -25 to 85 °C. Suitable for applications requiring high-speed data storage in compact devices.

4

R-PBGA-B153

13 mm

68719476736 bit

FLASH

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410161B1B1I010 by Cypress Semiconductor

S40410161B1B1I010

Cypress Semiconductor

Cypress Semiconductor's S40410161B1B1I010 is a 16GX8 MLC NAND Flash Memory with 17179869184 words capacity. Operating at -40 to 85 °C, it has a supply voltage range of 2.7V to 3.6V for industrial applications. This rectangular package features a very thin profile, fine pitch grid array design suitable for synchronous operations in various electronic devices.

4

R-PBGA-B153

13 mm

137438953472 bit

FLASH

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

S40410161B1B1W010 by Cypress Semiconductor

S40410161B1B1W010

Cypress Semiconductor

Cypress Semiconductor's S40410161B1B1W010 is a 16GX8 MLC NAND flash memory with 17179869184 words. Operating at 3V, it has a memory density of 137438953472 bits and supports synchronous mode. With a very thin profile and fine pitch grid array package, it is ideal for applications requiring high-speed data storage in compact devices.

4

R-PBGA-B153

13 mm

137438953472 bit

FLASH

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

MTFC4GACAJCN-4MIT by Micron Technology

MTFC4GACAJCN-4MIT

Micron Technology

MTFC4GACAJCN-4MIT by Micron Technology is a 4GX8 MLC NAND flash memory with 34359738368 bit density. Operating at -40 to 85 °C, it has a clock frequency of 52 MHz and supports parallel interface. Ideal for industrial applications requiring high-speed data storage in compact devices.

52 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MTFC8GAKAJCN-4MIT by Micron Technology

MTFC8GAKAJCN-4MIT

Micron Technology

MTFC8GAKAJCN-4MIT by Micron Technology is a 8GX8 MLC NAND flash memory with 52 MHz clock frequency. It operates in industrial temperature range (-40 to 85 °C) and has a memory density of 68719476736 bit. Ideal for applications requiring high-speed data storage in compact devices.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MTFC16GAKAECN-4MIT by Micron Technology

MTFC16GAKAECN-4MIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .5 mm;

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

MTFC64GAKAEEY-4MIT by Micron Technology

MTFC64GAKAEEY-4MIT

Micron Technology

MTFC64GAKAEEY-4MIT by Micron Technology is a 64GX8 MLC NAND flash memory with 549755813888 bit density. Operating in industrial temperature range (-40 to 85 °C), it features synchronous operation, thin profile grid array package, and 153 terminals for parallel communication. Ideal for high-density storage applications requiring fast data access and reliability.

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

MLC NAND TYPE

11.5 mm

IS21ES04G-JCLI by Integrated Silicon Solution

IS21ES04G-JCLI

Integrated Silicon Solution

IS21ES04G-JCLI by Integrated Silicon Solution is a 4GX8 Flash Memory with 3.3V programming voltage and 85°C max operating temp. Ideal for industrial applications, it features a very thin profile grid array package with 153 terminals and operates in synchronous mode.

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH

8

3

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

11.5 mm

IS21ES08G-JCLI by Integrated Silicon Solution

IS21ES08G-JCLI

Integrated Silicon Solution

IS21ES08G-JCLI by Integrated Silicon Solution is a 3.3V synchronous flash memory with 8GX8 organization, operating at up to 200MHz clock frequency. Ideal for industrial applications, this MLC NAND type memory offers a memory density of 68719476736 bits and features a very thin profile grid array package with fine pitch terminals.

1

200 MHz

NO

NO

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH

8

3

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

NO

MLC NAND TYPE

11.5 mm

IS21ES16G-JCLI by Integrated Silicon Solution

IS21ES16G-JCLI

Integrated Silicon Solution

IS21ES16G-JCLI by Integrated Silicon Solution is a 16GX8 Flash Memory with synchronous operation and a max clock frequency of 200 MHz. It has a memory density of 137438953472 bit and is suitable for industrial applications.

1

200 MHz

NO

NO

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH

8

3

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

NO

MLC NAND TYPE

11.5 mm

IS21ES32G-JCLI by Integrated Silicon Solution

IS21ES32G-JCLI

Integrated Silicon Solution

IS21ES32G-JCLI by Integrated Silicon Solution is a 32GX8 MLC NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a very thin profile grid array package suitable for industrial applications requiring high memory density and a wide operating temperature range from -40°C to 85°C.

1

200 MHz

NO

NO

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH

8

3

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

3-STATE

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

NO

MLC NAND TYPE

11.5 mm

IS22ES04G-JCLA1 by Integrated Silicon Solution

IS22ES04G-JCLA1

Integrated Silicon Solution

IS22ES04G-JCLA1 by Integrated Silicon Solution is a 4GX8 flash memory with 3.3V programming voltage and operates synchronously at -40 to 85°C. With a package style of GRID ARRAY, it's ideal for industrial applications requiring high memory density and reliability in harsh environments.

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH

8

3

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

AEC-Q100

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

10

11.5 mm

THGBMHG7C2LBAIL by Toshiba

THGBMHG7C2LBAIL

Toshiba

FLASH; Temperature Grade: OTHER; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

R-PBGA-B153

137438953472 bit

FLASH

8

1

153

17179869184 words

16G

ASYNCHRONOUS

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

BGA

RECTANGULAR

GRID ARRAY

PARALLEL

2.7

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

BOTTOM

IS21ES04G-JCLI-TR by Integrated Silicon Solution

IS21ES04G-JCLI-TR

Integrated Silicon Solution

IS21ES04G-JCLI-TR by Integrated Silicon Solution is a synchronous flash memory with 4GX8 organization, 34359738368 bit memory density, and operates at industrial temperature grade. It features a very thin profile grid array package with 153 terminals and is suitable for applications requiring high-speed data storage in industrial environments.

R-PBGA-B153

13 mm

34359738368 bit

FLASH

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

IS21ES08G-JCLI-TR by Integrated Silicon Solution

IS21ES08G-JCLI-TR

Integrated Silicon Solution

IS21ES08G-JCLI-TR by Integrated Silicon Solution is an 8GX8 flash memory with 68719476736 bit density. Operating at 3.3V, it features a very thin profile grid array package and operates in industrial temperature range (-40 to 85 °C). Ideal for applications requiring high-speed synchronous flash memory with parallel interface.

R-PBGA-B153

13 mm

68719476736 bit

FLASH

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

MTFC16GAKAEJP-4MIT by Micron Technology

MTFC16GAKAEJP-4MIT

Micron Technology

MTFC16GAKAEJP-4MIT by Micron Technology is a 16GX8 Flash Memory with 17179869184 words capacity. Operating in synchronous mode, it has a memory width of 8 and memory density of 137438953472 bit. Ideal for industrial applications, this very thin profile package offers parallel programming with a terminal pitch of 0.5 mm.

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

11.5 mm

MTFC32GAKAEJP-4MIT by Micron Technology

MTFC32GAKAEJP-4MIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 13 mm;

R-PBGA-B153

e1

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

11.5 mm

EM04APGD4-BA000-2 by Delkin Devices

EM04APGD4-BA000-2

Delkin Devices

Delkin Devices' EM04APGD4-BA000-2 is a Flash Memory with 4GX8 organization, 34359738368 bit memory density, and operates at 3.3V. Ideal for industrial applications, it features a very thin profile GRID ARRAY package with 153 terminals and can withstand temperatures from -40 to 85 °C.

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

EM04APYD3-BA000-2 by Delkin Devices

EM04APYD3-BA000-2

Delkin Devices

Delkin Devices' EM04APYD3-BA000-2 is a 4GX8 flash memory card with 34359738368 bit memory density. Operating at 3.3V, it features a very thin profile and fine pitch design for industrial applications. With a temperature range of -40 to 85 °C, this rectangular package offers synchronous operation in parallel mode.

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

MTFC8GAMALBH-AIT by Micron Technology

MTFC8GAMALBH-AIT

Micron Technology

MTFC8GAMALBH-AIT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at -40 to 85°C. It features a thin profile package style with 153 terminals and uses parallel programming mode. Ideal for industrial applications requiring high memory density and fast data access.

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm