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MTFC8GAMALBH-AITTR

Micron Technology

MTFC8GAMALBH-AITTR by Micron Technology

MTFC8GAMALBH-AITTR by Micron Technology is a NAND flash memory with 8GX8 organization, 200 MHz clock frequency, and 85°C max operating temp. Ideal for automotive applications due to AEC-Q104 screening level, thin profile package style, and wide temperature range from -40°C to 85°C.

Median Price

$14.535

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 600 parts In-Stock

1+ parts

$14.535

100+ parts

-

1k+ parts

-

10k+ parts

-

600

$14.535

-

-

-

Chip Stock

USA . 18,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,100

-

-

-

-

Vyrian

USA . 7,075 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,075

-

-

-

-

Digiode

USA . 1,049 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,049

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 304 parts In-Stock

1+ parts

$5.350

100+ parts

-

1k+ parts

-

10k+ parts

-

304

$5.350

-

-

-

AZTECH Wire

Italy . 428 parts In-Stock

1+ parts

$5.970

100+ parts

-

1k+ parts

-

10k+ parts

-

428

$5.970

-

-

-

Ampacity Inc.

Singapore . 1,412 parts In-Stock

1+ parts

$11.000

100+ parts

-

1k+ parts

-

10k+ parts

-

1,412

$11.000

-

-

-

Semicontronic

India . 286 parts In-Stock

1+ parts

$13.000

100+ parts

$12.675

1k+ parts

$12.610

10k+ parts

-

286

$13.000

$12.675

$12.610

-

Aranea Global

USA . 50 parts In-Stock

1+ parts

$14.245

100+ parts

-

1k+ parts

$13.675

10k+ parts

-

50

$14.245

-

$13.675

-

Continental Prestige Electronics

USA . 116 parts In-Stock

1+ parts

$14.535

100+ parts

-

1k+ parts

-

10k+ parts

$14.245

116

$14.535

-

-

$14.245

Corohmni

South Africa . 9 parts In-Stock

1+ parts

$24.099

100+ parts

-

1k+ parts

-

10k+ parts

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9

$24.099

-

-

-

Corphita

USA . 1,178 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,178

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-

-

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Argo Parts USA

USA . 1,001 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,001

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-

-

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,000

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-

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Overview

Discover the unparalleled quality and reliability of Micron Technology's MTFC8GAMALBH-AITTR Flash Memory. Designed with cutting-edge technology and superior materials, this product offers unmatched performance and durability for a wide range of applications. Whether you're enhancing your digital devices or optimizing system performance, this flash memory provides the speed, efficiency, and reliability you need. Upgrade to Micron Technology and experience the value and benefits that set this product apart from the rest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability for the flash memory product.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on circuit boards.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise timing and synchronization of data, improving overall performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this flash memory can handle demanding environments without issue.

Technology: CMOS

The CMOS technology used in this flash memory offers low power consumption and high speed operation.

Technical Specifications

Flash Memory MTFC8GAMALBH-AITTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Alternate Memory Width:

4

Maximum Clock Frequency (fCLK):

200 MHz

Command User Interface:

NO

Data Polling:

NO

Minimum Data Retention Time:

5

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

68719476736 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

8589934592 words

No. of Words Code:

8G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

8GX8

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

2.7

Ready or Busy:

YES

Screening Level:

AEC-Q104

Maximum Seated Height:

1.2 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Toggle Bit:

NO

Type:

NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC8GAMALBH-AITTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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