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153 Flash Memory 98

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
MTFC4GLGDM-AITZ by Micron Technology

MTFC4GLGDM-AITZ

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Words Code: 4G;

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

MTFC4GMWDM-3MAIT by Micron Technology

MTFC4GMWDM-3MAIT

Micron Technology

MTFC4GMWDM-3MAIT by Micron Technology is a 4GX8 flash memory with 34359738368 bit density. Operating in synchronous mode, it has a thin profile and fine pitch package style. Ideal for industrial applications, it supports parallel programming with a voltage range of 2.7V to 3.6V.

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

11.5 mm

RPSEMC16DA1 by Panasonic

RPSEMC16DA1

Panasonic

Panasonic RPSEMC16DA1 is a 16GX8 MLC NAND flash memory with 17179869184 words capacity. Operating in industrial temperature range (-40 to 85 °C), it has a low profile, fine pitch grid array package style. Suitable for applications requiring high memory density and reliability, with a supply voltage range of 2.7V to 3.6V.

R-PBGA-B153

13 mm

137438953472 bit

FLASH CARD

8

3

1

153

17179869184 words

16G

ASYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

2.7

AEC-Q100

1.4 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

MLC NAND TYPE

11.5 mm

MTFC2GMDEA-0MWTA by Micron Technology

MTFC2GMDEA-0MWTA

Micron Technology

MTFC2GMDEA-0MWTA by Micron Technology is a 2GX8 flash memory with 17179869184 bit density. Operating at 52 MHz, it has a very thin profile and fine pitch package style suitable for synchronous applications. With a voltage range of 2.7V to 3.6V, it is ideal for high-speed data storage in electronic devices.

ALSO HAVING MMC CONTROLLER

52 MHz

R-PBGA-B153

e2

13 mm

17179869184 bit

FLASH

8

1

153

2147483648 words

2G

SYNCHRONOUS

85 Cel

-25 Cel

2GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

3.3

.8 mm

3.6 V

2.7 V

3.3

YES

CMOS

OTHER

TIN SILVER COPPER NICKEL

BALL

.5 mm

BOTTOM

30

11.5 mm

SFEM008GB1EA1TO-I-GE-111-STD by Swissbit Ag

SFEM008GB1EA1TO-I-GE-111-STD

Swissbit Ag

Swissbit Ag's SFEM008GB1EA1TO-I-GE-111-STD is a Flash Memory with 8GX8 organization, MLC NAND type, and 68719476736 bit memory density. It has a very thin profile, fine pitch GRID ARRAY package style suitable for applications requiring high memory capacity in compact spaces. Operating temperature ranges from -40 to 85 °C making it versatile for various environments.

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

MLC NAND TYPE

11.5 mm

MTFC64GAPALBH-IT by Micron Technology

MTFC64GAPALBH-IT

Micron Technology

MTFC64GAPALBH-IT by Micron Technology is a 64GX8 NAND flash memory with 3-STATE output, operating at up to 200 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and wide temperature range support from -40°C to 85°C.

200 MHz

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC64GASAONS-AAT by Micron Technology

MTFC64GASAONS-AAT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

52 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.461 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

MTFC64GASAONS-AITESTR by Micron Technology

MTFC64GASAONS-AITESTR

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: TFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3.3;

52 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

95 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.461 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NOT SPECIFIED

NAND TYPE

11.5 mm

THGBMJG6C1LBAIL by Kioxia Holdings

THGBMJG6C1LBAIL

Kioxia Holdings

Kioxia Holdings' THGBMJG6C1LBAIL is an 8GX8 flash memory IC with 68719476736-bit memory density. It operates b/w -25°C to 85°C, with a voltage range of 2.7V to 3.6V. This rectangular GRID ARRAY package is surface-mountable and ideal for applications requiring high-speed data storage in compact devices.

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

85 Cel

-25 Cel

8GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

MTFC4GACAJCN-4MITTR by Micron Technology

MTFC4GACAJCN-4MITTR

Micron Technology

Micron Technology's MTFC4GACAJCN-4MITTR is a 4GX8 MLC NAND flash memory with 34359738368-bit density. Operating at up to 52 MHz, it features a very thin profile and fine pitch grid array package suitable for industrial applications. With a wide temperature range (-40 to 85 °C), this synchronous memory offers high performance in compact dimensions.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

MTFC128GAPALBH-AAT by Micron Technology

MTFC128GAPALBH-AAT

Micron Technology

MTFC128GAPALBH-AAT by Micron Technology is a 128GX8 NAND flash memory with 1099511627776 bit density. Operating in synchronous mode, it has a terminal pitch of 0.5 mm and supports parallel communication. This thin profile package is ideal for applications requiring high-speed data storage and retrieval at temperatures ranging from -40 to 105 °C.

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.1 mm

3.6 V

2.7 V

YES

CMOS

GULL WING

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC16GAPALGT-AIT by Micron Technology

MTFC16GAPALGT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: BGA; Package Shape: RECTANGULAR; Organization: 16GX8;

200 MHz

5

R-PBGA-B153

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC8GAKAJCN-4MITTR by Micron Technology

MTFC8GAKAJCN-4MITTR

Micron Technology

Micron Technology's MTFC8GAKAJCN-4MITTR is a 8GX8 MLC NAND flash memory with 68719476736 bit density. It operates in synchronous mode at up to 52 MHz clock frequency, suitable for industrial applications. The package style is grid array with very thin profile and fine pitch, making it ideal for compact electronic devices.

52 MHz

NO

NO

R-PBGA-B153

e1

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NO

MLC NAND TYPE

11.5 mm

THGBMJG8C2LBAIL by Kioxia Holdings

THGBMJG8C2LBAIL

Kioxia Holdings

Kioxia Holdings' THGBMJG8C2LBAIL is a Flash Memory with 32GX8 organization, 274877906944 bit memory density, and CMOS technology. It features a package style of GRID ARRAY, operates b/w -25 to 85 °C, and has a terminal pitch of 0.5 mm. Ideal for applications requiring high-speed data storage in compact devices.

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

85 Cel

-25 Cel

32GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY

3.6 V

2.7 V

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

THGBMJG8C4LBAU8 by Kioxia Holdings

THGBMJG8C4LBAU8

Kioxia Holdings

Kioxia Holdings THGBMJG8C4LBAU8 is a 32GX8 flash memory with 274877906944 bit density. It operates b/w -40 to 105 °C, suitable for industrial applications. With a terminal pitch of 0.5 mm and package style GRID ARRAY, it offers high-speed data storage in compact devices.

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

BGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

11 mm

FEMC064GTTE7-T14-46 by Flexxon Global

FEMC064GTTE7-T14-46

Flexxon Global

FEMC064GTTE7-T14-46 by Flexxon Global is a Flash Memory with 64GX8 organization, MLC NAND type, and 549755813888 bit memory density. It operates b/w -25 to 85 °C, suitable for automotive applications meeting AEC-Q100 standards. With 153 terminals and CMOS technology, it offers high performance in a compact rectangular package.

R-PBGA-B153

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC016GTTE7-T14-16 by Flexxon Global

FEMC016GTTE7-T14-16

Flexxon Global

FEMC016GTTE7-T14-16 by Flexxon Global is a 16GX8 MLC NAND flash memory card with 137.4Tb density and 3.3V supply voltage. Ideal for automotive applications due to AEC-Q100 screening, TS 16949 compliance, and operating temperature range of -25°C to 85°C.

R-PBGA-B153

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

85 Cel

-25 Cel

16GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC002GTTE7-T14-17 by Flexxon Global

FEMC002GTTE7-T14-17

Flexxon Global

FEMC002GTTE7-T14-17 by Flexxon Global is a SLC NAND flash memory with 2GX8 organization, 17179869184 bit memory density, and 3.3V nominal voltage. Ideal for automotive applications due to AEC-Q100 screening level and TS 16949 certification, operating b/w -25°C to 85°C temperature range.

R-PBGA-B153

17179869184 bit

FLASH CARD

8

1

153

2147483648 words

2G

85 Cel

-25 Cel

2GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

SLC NAND TYPE

FEMC002GTTG7-T24-17 by Flexxon Global

FEMC002GTTG7-T24-17

Flexxon Global

FEMC002GTTG7-T24-17 by Flexxon Global is a SLC NAND flash memory with 2GX8 organization, 17179869184 bit memory density, and operates at industrial temperature grade. It has 153 terminals, package shape is rectangular made of plastic/epoxy material. Ideal for automotive applications due to AEC-Q100 screening level and TS 16949 certification.

R-PBGA-B153

17179869184 bit

FLASH CARD

8

1

153

2147483648 words

2G

85 Cel

-40 Cel

2GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

SLC NAND TYPE

FEMC004GTTE7-T14-16 by Flexxon Global

FEMC004GTTE7-T14-16

Flexxon Global

FEMC004GTTE7-T14-16 by Flexxon Global is a Flash Memory with 4GX8 organization, MLC NAND type, and 3.3V nominal voltage. It is suitable for applications requiring high memory density and operates in a wide temperature range (-25 to 85 °C).

R-PBGA-B153

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

85 Cel

-25 Cel

4GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

OTHER

BALL

BOTTOM

MLC NAND TYPE

FEMC004GTTG7-T24-16 by Flexxon Global

FEMC004GTTG7-T24-16

Flexxon Global

FEMC004GTTG7-T24-16 by Flexxon Global is a 3.3V MLC NAND flash memory with 4GX8 organization, 34359738368-bit density, and AEC-Q100 screening. Ideal for industrial applications requiring reliable data storage in temperatures ranging from -40 to 85°C. This rectangular package with 153 terminals is designed for surface mount assembly.

R-PBGA-B153

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

RECTANGULAR

AEC-Q100; TS 16949

3.3

YES

CMOS

INDUSTRIAL

BALL

BOTTOM

MLC NAND TYPE

MTFC16GAPALBH-ITTR by Micron Technology

MTFC16GAPALBH-ITTR

Micron Technology

MTFC16GAPALBH-ITTR by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a thin profile and fine pitch package style suitable for industrial applications. With a temperature range of -40 to 85 °C, it offers high-speed synchronous operation in a compact form factor.

200 MHz

R-PBGA-B153

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC16GAPALBH-IT by Micron Technology

MTFC16GAPALBH-IT

Micron Technology

MTFC16GAPALBH-IT by Micron Technology is a 16GX8 NAND flash memory with 17179869184 words capacity. Operating at up to 200 MHz, it has a thin profile and fine pitch package style suitable for industrial applications. With a temperature range of -40 to 85 °C, this flash card offers high memory density and synchronous operation.

200 MHz

R-PBGA-B153

e1

13 mm

137438953472 bit

FLASH CARD

8

1

153

17179869184 words

16G

SYNCHRONOUS

85 Cel

-40 Cel

16GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

2.7

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC64GAPALGT-AIT by Micron Technology

MTFC64GAPALGT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA153,14X14,20;

200 MHz

5

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC32GAPALGT-AAT by Micron Technology

MTFC32GAPALGT-AAT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 2.7 V;

200 MHz

5

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC8GAMALGT-AIT by Micron Technology

MTFC8GAMALGT-AIT

Micron Technology

MTFC8GAMALGT-AIT by Micron Technology is a NAND flash memory with 8GX8 organization, operating at up to 200 MHz. It features a very thin profile, fine pitch package style suitable for industrial applications. With a memory density of 68719476736 bits and AEC-Q100 screening level, it offers reliable performance in automotive electronics.

200 MHz

5

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC128GAPALBH-AIT by Micron Technology

MTFC128GAPALBH-AIT

Micron Technology

Micron Technology's MTFC128GAPALBH-AIT is a 128GX8 NAND flash memory with 1.1mm seated height, operating at up to 200MHz clock frequency. Ideal for industrial applications, it offers a memory density of 1099511627776 bit and operates in an industrial temperature range from -40°C to 85°C.

200 MHz

5

R-PBGA-B153

e1

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

AEC-Q100

1.1 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC8GAMALGT-AAT by Micron Technology

MTFC8GAMALGT-AAT

Micron Technology

Micron Technology's MTFC8GAMALGT-AAT is a NAND flash memory with 8GX8 organization, 200 MHz clock frequency, and 105°C max operating temp. Ideal for industrial applications requiring high-speed data storage in compact devices due to its fine pitch grid array package and low power consumption.

200 MHz

5

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

105 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC32GAPALGT-AIT by Micron Technology

MTFC32GAPALGT-AIT

Micron Technology

FLASH CARD; Temperature Grade: INDUSTRIAL; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B153;

200 MHz

5

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q100

.8 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC128GAZAQJP-AIT by Micron Technology

MTFC128GAZAQJP-AIT

Micron Technology

MTFC128GAZAQJP-AIT by Micron Technology is a 128GX8 NAND flash memory with 1.8V programming voltage, operating at up to 200MHz clock frequency. It is designed for industrial applications requiring high memory density and operates in synchronous mode with a temperature range of -40 to 85°C.

200 MHz

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

AEC-Q100

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC64GAZAQHD-AIT by Micron Technology

MTFC64GAZAQHD-AIT

Micron Technology

Micron Technology's MTFC64GAZAQHD-AIT is a 64GX8 NAND flash memory with 68719476736 words capacity. Operating at 200 MHz, it has a low profile of 0.9 mm and supports industrial temperature grade applications. With a package style of GRID ARRAY, it offers high memory density and synchronous operation for various electronic devices.

200 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

AEC-Q100

.9 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC128GASAQJP-AIT by Micron Technology

MTFC128GASAQJP-AIT

Micron Technology

FLASH CARD; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 13 mm; Maximum Supply Voltage (Vsup): 3.6 V;

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

1 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC128GASAQJP-AAT by Micron Technology

MTFC128GASAQJP-AAT

Micron Technology

FLASH CARD; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH; Data Polling: NO;

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

105 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

1 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC64GASAQHD-AAT by Micron Technology

MTFC64GASAQHD-AAT

Micron Technology

MTFC64GASAQHD-AAT by Micron Technology is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at 200 MHz, it offers synchronous operation and a very thin profile package style. Ideal for automotive applications due to AEC-Q104 screening level and wide temperature range from -40°C to 105°C.

200 MHz

NO

NO

1

R-PBGA-B153

e1

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

105 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

30

NAND TYPE

11.5 mm

MTFC32GASAQHD-AIT by Micron Technology

MTFC32GASAQHD-AIT

Micron Technology

FLASH CARD; No. of Terminals: 153; Package Code: VFBGA; Package Shape: RECTANGULAR; Screening Level: AEC-Q104; Command User Interface: NO;

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC64GASAQHD-AIT by Micron Technology

MTFC64GASAQHD-AIT

Micron Technology

Micron Technology's MTFC64GASAQHD-AIT is a 64GX8 NAND flash memory with 549755813888 bit density. Operating at up to 200 MHz, it suits applications requiring high-speed data storage. With AEC-Q104 screening and -40 to 85 °C temp range, it's ideal for automotive electronics.

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC32GASAQHD-AAT by Micron Technology

MTFC32GASAQHD-AAT

Micron Technology

Micron's MTFC32GASAQHD-AAT is a 32GX8 NAND flash memory with 34359738368 words. Operating in synchronous mode at up to 200 MHz, it offers a memory density of 274877906944 bits. Ideal for applications requiring high-speed data storage and retrieval in automotive electronics due to AEC-Q104 screening level.

200 MHz

NO

NO

1

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

105 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

AEC-Q104

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

MTFC64GAZAQHD-WT by Micron Technology

MTFC64GAZAQHD-WT

Micron Technology

MTFC64GAZAQHD-WT by Micron Technology is a 64GX8 NAND flash memory with 549755813888 bit density. Operating in synchronous mode, it has a package style of GRID ARRAY, suitable for applications requiring high-speed data storage. With a very thin profile and fine pitch, it offers parallel operation at temperatures ranging from -25 to 85 °C.

1

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-25 Cel

64GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

.9 mm

3.6 V

2.7 V

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

SFEM032GB1EA1TO-I-HG-12P-STD by Swissbit Ag

SFEM032GB1EA1TO-I-HG-12P-STD

Swissbit Ag

Swissbit Ag's SFEM032GB1EA1TO-I-HG-12P-STD is a 32GX8 SLC NAND flash memory with 20000 Write/Erase Cycles endurance. Operating at 3.3V, it offers 34359738368 words capacity and supports up to 200 MHz clock frequency. Ideal for applications requiring high-speed synchronous memory in compact form factors.

200 MHz

NO

NO

1

20000 Write/Erase Cycles

R-PBGA-B153

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

NO

SLC NAND TYPE

11.5 mm

ASFC8G31M-51BIN by Alliance Memory

ASFC8G31M-51BIN

Alliance Memory

ASFC8G31M-51BIN by Alliance Memory is a 3V, 200MHz synchronous flash memory with 8GX8 organization and MLC NAND type. It features a very thin profile, fine pitch grid array package suitable for applications requiring high-speed data storage in compact spaces. With a wide operating temperature range of -40 to 85 °C, it is ideal for industrial and automotive electronics.

200 MHz

NO

NO

R-PBGA-B153

13 mm

68719476736 bit

FLASH CARD

8

1

153

8589934592 words

8G

SYNCHRONOUS

85 Cel

-40 Cel

8GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

ASFC4G31M-51BINTR by Alliance Memory

ASFC4G31M-51BINTR

Alliance Memory

Alliance Memory's ASFC4G31M-51BINTR is a 3V, 4GX8 MLC NAND flash memory with 200MHz clock frequency. With 34359738368-bit density and 4294967296 words, it's ideal for high-speed data storage applications. Featuring a very thin profile and fine pitch grid array package, it operates b/w -40°C to 85°C.

200 MHz

NO

NO

R-PBGA-B153

13 mm

34359738368 bit

FLASH CARD

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-40 Cel

4GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3

1 mm

3.6 V

2.7 V

3

YES

CMOS

BALL

.5 mm

BOTTOM

NO

MLC NAND TYPE

11.5 mm

THGAMVT0T43BAIR by Kioxia Holdings

THGAMVT0T43BAIR

Kioxia Holdings

Kioxia Holdings' THGAMVT0T43BAIR is a NAND flash memory with 128GX8 organization, operating at 52 MHz clock frequency. It features a package style of GRID ARRAY, very thin profile, and fine pitch. Suitable for applications requiring high-speed data storage in compact devices due to its synchronous operation and 1.8V programming voltage.

3.3V SUPPLY IS ALSO AVAILABLE

52 MHz

YES

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-25 Cel

128GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8

1 mm

.00104 Amp

135 mA

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

SFEM064GB1ED1TO-I-6F-111-STD by Swissbit Ag

SFEM064GB1ED1TO-I-6F-111-STD

Swissbit Ag

Swissbit Ag's SFEM064GB1ED1TO-I-6F-111-STD is a 64GX8 TLC NAND flash memory with 549755813888 bit density. Operating at 3.3V, it supports up to 200 MHz clock frequency and has a temperature range of -40 to 85 °C. Ideal for applications requiring high-speed synchronous memory in compact form factors.

200 MHz

R-PBGA-B153

13 mm

549755813888 bit

FLASH CARD

8

1

153

68719476736 words

64G

SYNCHRONOUS

85 Cel

-40 Cel

64GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

TLC NAND TYPE

11.5 mm

SFEM256GB1ED1TO-I-8H-111-STD by Swissbit Ag

SFEM256GB1ED1TO-I-8H-111-STD

Swissbit Ag

Swissbit Ag's SFEM256GB1ED1TO-I-8H-111-STD is a 256GX8 TLC NAND flash memory with 3.3V programming voltage, operating at -40 to 85 °C. It features a grid array package style, synchronous operation mode, and supports up to 200 MHz clock frequency. Ideal for applications requiring high-density memory storage in compact devices.

200 MHz

R-PBGA-B153

13 mm

2199023255552 bit

FLASH CARD

8

1

153

274877906944 words

256G

SYNCHRONOUS

85 Cel

-40 Cel

256GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

TLC NAND TYPE

11.5 mm

SFEM128GB1ED1TO-I-7G-111-STD by Swissbit Ag

SFEM128GB1ED1TO-I-7G-111-STD

Swissbit Ag

Swissbit Ag's SFEM128GB1ED1TO-I-7G-111-STD is a 128GX8 TLC NAND flash memory with 3.3V programming voltage, operating at up to 200 MHz clock frequency. Suitable for applications requiring high memory density and fast data processing in a compact GRID ARRAY package.

200 MHz

R-PBGA-B153

13 mm

1099511627776 bit

FLASH CARD

8

1

153

137438953472 words

128G

SYNCHRONOUS

85 Cel

-40 Cel

128GX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

3.6 V

2.7 V

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

TLC NAND TYPE

11.5 mm

EM32FQYHY-BA000-2 by Delkin Devices

EM32FQYHY-BA000-2

Delkin Devices

Delkin Devices' EM32FQYHY-BA000-2 is a 32GX8 TLC NAND flash memory with 3.3V programming voltage and 85°C max temp. Ideal for hardware write protection, it features a compact rectangular package style with 153 terminals in a grid array layout for various applications requiring high-density memory storage.

NO

NO

R-PBGA-B156

13 mm

274877906944 bit

FLASH CARD

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-40 Cel

32GX8

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

3.3

1 mm

3.3

YES

CMOS

BALL

.5 mm

BOTTOM

NO

TLC NAND TYPE

11.5 mm

HARDWARE

MTFC4GMXEA-WT by Micron Technology

MTFC4GMXEA-WT

Micron Technology

MTFC4GMXEA-WT by Micron Technology is a 4GX8 NAND flash memory with 34359738368 bit density. Operating at 52 MHz, it has a low profile of 0.8 mm and supports hardware write protection. Ideal for embedded MMC applications, this synchronous memory features a very thin grid array package with 153 terminals.

52 MHz

R-PBGA-B153

13 mm

34359738368 bit

Embedded MMC

8

1

153

4294967296 words

4G

SYNCHRONOUS

85 Cel

-25 Cel

4GX8

OPEN-DRAIN

PLASTIC/EPOXY

VFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

.8 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE

MTFC32GLXDM-WT by Micron Technology

MTFC32GLXDM-WT

Micron Technology

MTFC32GLXDM-WT by Micron Technology is a 32GX8 NAND flash memory with 34359738368 words capacity. Operating at 52 MHz, it has a thin profile and fine pitch package style suitable for embedded MMC applications. With a voltage range of 1.65V to 1.95V, this CMOS technology chip offers hardware write protection and open-drain output characteristics.

52 MHz

R-PBGA-B153

13 mm

274877906944 bit

Embedded MMC

8

1

153

34359738368 words

32G

SYNCHRONOUS

85 Cel

-25 Cel

32GX8

OPEN-DRAIN

PLASTIC/EPOXY

TFBGA

BGA153,14X14,20

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

1.2 mm

80 mA

1.95 V

1.65 V

1.8

YES

CMOS

BALL

.5 mm

BOTTOM

NAND TYPE

11.5 mm

HARDWARE