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ASFC4G31M-51BINTR

Alliance Memory

ASFC4G31M-51BINTR by Alliance Memory

Alliance Memory's ASFC4G31M-51BINTR is a 3V, 4GX8 MLC NAND flash memory with 200MHz clock frequency. With 34359738368-bit density and 4294967296 words, it's ideal for high-speed data storage applications. Featuring a very thin profile and fine pitch grid array package, it operates b/w -40°C to 85°C.

Median Price

$6.110

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Kruse

Germany . 62,000 parts In-Stock

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Kruse Electronics AG

Switzerland . 30,000 parts In-Stock

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ARCO, INC.

USA . 24,000 parts In-Stock

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VNN

France . 20,973 parts In-Stock

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Vyrian

USA . 5,281 parts In-Stock

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NAC Semi

USA . 4,000 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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AZTECH Wire

Italy . 349 parts In-Stock

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Argo Parts USA

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GreenTree Electronics

Israel . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,105 parts In-Stock

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Bastille Electronics

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Overview

Revolutionize your storage solutions with the ASFC4G31M-51BINTR from Alliance Memory. Crafted with precision and expertise, this flash memory device offers unparalleled performance and reliability for a variety of applications. With a nominal supply voltage of 3V and a maximum clock frequency of 200 MHz, this versatile memory solution is perfect for high-speed data processing tasks. Trust Alliance Memory to deliver top-quality products that meet your needs and exceed your expectations. Choose the ASFC4G31M-51BINTR for unmatched value and superior performance in flash memory technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body ensures durability and reliability of the flash memory product.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster and more efficient data transfer, making this flash memory product suitable for high-performance applications.

Nominal Supply Voltage / Vsup (V): 3

The 3V nominal supply voltage ensures compatibility with a wide range of devices and power sources.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this flash memory product can withstand harsh environmental conditions.

Memory Density: 34359738368 bit

The high memory density allows for storing a large amount of data in a compact form factor, making this product ideal for applications with limited space.

Technical Specifications

Flash Memory ASFC4G31M-51BINTR attributes and parameters. Explore more Flash Memory devices from Alliance Memory

Specs

Maximum Clock Frequency (fCLK):

200 MHz

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B153

Length:

13 mm

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

MLC NAND TYPE

Width:

11.5 mm

Trade Compliance

ASFC4G31M-51BINTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Alliance Memory

Alliance Memory is a worldwide fabless manufacturer of legacy and new technology memory products that are pin for pin drop-in replacements for SRAM, DRAM, and NOR FLASH ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, Pseudo SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) 1.2V quadruple rate(DDR4) synchronous DRAMs, along with 5V Parallel NOR Flash devices. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM, DRAM, and FLASH products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in Kirkland, Washington.

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