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MTFC4GLDEA-0MWTTR

Micron Technology

MTFC4GLDEA-0MWTTR by Micron Technology

Micron Technology's MTFC4GLDEA-0MWTTR is a 3.3V MLC NAND flash memory with 4GX8 organization, operating at up to 52 MHz clock frequency. With a compact rectangular package style and very thin profile, it is ideal for applications requiring high-speed synchronous operation in devices such as smartphones and tablets.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,944 parts In-Stock

1+ parts

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8,944

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Digiode

USA . 1,761 parts In-Stock

1+ parts

-

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1k+ parts

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1,761

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

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100+ parts

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100

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,316 parts In-Stock

1+ parts

$9.000

100+ parts

-

1k+ parts

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10k+ parts

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1,316

$9.000

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AZTECH Wire

Italy . 410 parts In-Stock

1+ parts

$13.305

100+ parts

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410

$13.305

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Corohmni

South Africa . 713 parts In-Stock

1+ parts

$26.841

100+ parts

-

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713

$26.841

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Continental Prestige Electronics

USA . 3,591 parts In-Stock

1+ parts

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3,591

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Corphita

USA . 2,483 parts In-Stock

1+ parts

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2,483

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Argo Parts USA

USA . 1,015 parts In-Stock

1+ parts

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1,015

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Microchip USA

USA . 400 parts In-Stock

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400

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Overview

Experience lightning-fast data transfer speeds and reliable performance with the MTFC4GLDEA-0MWTTR by Micron Technology. As a leading manufacturer in the flash memory category, Micron Technology delivers top-quality products that exceed customer expectations. This versatile device is perfect for a wide range of applications, offering value and efficiency to users seeking high-speed storage solutions. Upgrade your system with the MTFC4GLDEA-0MWTTR and enjoy the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the flash memory, making it a reliable choice for long-term use.

Surface Mount: YES

The ability to be surface mounted makes installation easy and efficient, saving time and effort during the assembly process.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space in electronic devices, making this flash memory a compact and space-saving option.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures precise and coordinated data transfers, resulting in faster and more reliable performance.

Nominal Supply Voltage (Vsup): 3.3V

With a stable supply voltage, this flash memory can operate efficiently and effectively without risk of fluctuations causing malfunctions.

No. of Terminals: 153

The high number of terminals allows for more connections and data transfer capabilities, enhancing the overall performance of the flash memory.

Package Style: GRID ARRAY, VERY THIN PROFILE, FINE PITCH

This package style offers a thin profile and fine pitch, making it suitable for compact and slim electronic devices.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature tolerance ensures that this flash memory can withstand elevated heat levels, making it suitable for a wide range of operating environments.

Organization: 4GX8

The organization of 4GX8 indicates a high capacity and efficient data organization structure, providing ample storage space and easy access to stored data.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature tolerance allows this flash memory to function reliably in cold environments, ensuring consistent performance in various conditions.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper provides corrosion resistance and enhances connectivity, ensuring a long-lasting and reliable connection.

Terminal Position: BOTTOM

The terminal position at the bottom of the package makes it easy to integrate and connect the flash memory with other components, simplifying the installation process.

Technical Specifications

Flash Memory MTFC4GLDEA-0MWTTR attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

52 MHz

Command User Interface:

NO

Data Polling:

NO

JESD-30 Code:

R-PBGA-B153

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

34359738368 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

153

No. of Words:

4294967296 words

No. of Words Code:

4G

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

4GX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA153,14X14,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Programming Voltage (V):

3.3

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.5 mm

Terminal Position:

BOTTOM

Toggle Bit:

NO

Type:

MLC NAND TYPE

Width:

11.5 mm

Trade Compliance

MTFC4GLDEA-0MWTTR Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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