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TRF3710IRGZTG4

Texas Instruments

TRF3710IRGZTG4 by Texas Instruments

TRF3710IRGZTG4 by Texas Instruments is a cellphone IC with 48 terminals, operating at -40 to 85°C. It features a 5V supply voltage, RF and baseband circuit for telecom applications. The package style is chip carrier with very thin profile, suitable for surface mount assembly.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,623 parts In-Stock

1+ parts

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5,623

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Digiode

USA . 400 parts In-Stock

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400

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,467 parts In-Stock

1+ parts

$6.353

100+ parts

-

1k+ parts

$7.106

10k+ parts

-

1,467

$6.353

-

$7.106

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ChromeModa Solutions

Germany . 3,225 parts In-Stock

1+ parts

$7.138

100+ parts

$5.853

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3,225

$7.138

$5.853

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IDEA Electronic Components Group

UK . 515 parts In-Stock

1+ parts

$7.138

100+ parts

-

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$6.424

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515

$7.138

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$6.424

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AZTECH Wire

Italy . 603 parts In-Stock

1+ parts

$15.647

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603

$15.647

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One Stop Electronics

USA . 1,508 parts In-Stock

1+ parts

$362.000

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1,508

$362.000

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Corphita

USA . 3,278 parts In-Stock

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3,278

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DigiPath Technology Company

USA . 1,720 parts In-Stock

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100+ parts

$6.436

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1,720

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$6.436

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Overview

Enhance your cellphone's performance with the TRF3710IRGZTG4 by Texas Instruments, a top-quality RF and baseband circuit designed to optimize your device's functionality. With Texas Instruments' reputation for excellence in manufacturing, you can trust that this cellphone ICs will deliver superior performance and reliability. Whether you're looking to improve signal strength, reduce power consumption, or enhance data processing speed, this product offers unmatched value and benefits. Upgrade your cellphone experience today with the TRF3710IRGZTG4!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for portable devices like cellphones.

Surface Mount: YES

Surface mount technology allows for easier and more efficient assembly of the product, making it cost-effective.

Power Supplies (V): 5

Operating at a low voltage of 5V helps in reducing power consumption and extending battery life in cellphones.

No. of Terminals: 48

Having a higher number of terminals allows for more connectivity options and functionality in the product.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand heat and perform reliably in various environmental conditions.

Moisture Sensitivity Level (MSL): 3

A lower MSL indicates that the product is less sensitive to moisture, making it more robust and reliable in humid conditions.

Technical Specifications

Cellphone ICs TRF3710IRGZTG4 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Trade Compliance

TRF3710IRGZTG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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