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TRF4900PWRG4

Texas Instruments

TRF4900PWRG4 by Texas Instruments

TRF4900PWRG4 by Texas Instruments is a cellphone IC with 24 terminals, operating at 3V. It features CMOS technology, RF and baseband circuit for telecom applications. The package is small outline, thin profile, suitable for surface mount with a temperature range of -20 to 60°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,130 parts In-Stock

1+ parts

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7,130

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Digiode

USA . 1,891 parts In-Stock

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1,891

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Distributors (Availability)

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AZTECH Wire

Italy . 612 parts In-Stock

1+ parts

$6.511

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612

$6.511

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Parana Technologies

USA . 1,247 parts In-Stock

1+ parts

$7.712

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$8.242

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1,247

$7.712

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$8.242

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DigiPath Technology Company

USA . 1,102 parts In-Stock

1+ parts

$8.492

100+ parts

$7.812

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1,102

$8.492

$7.812

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ChromeModa Solutions

Germany . 3,186 parts In-Stock

1+ parts

$8.665

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$7.105

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3,186

$8.665

$7.105

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IDEA Electronic Components Group

UK . 1,186 parts In-Stock

1+ parts

$8.665

100+ parts

$8.232

1k+ parts

$7.798

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1,186

$8.665

$8.232

$7.798

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One Stop Electronics

USA . 1,045 parts In-Stock

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$436.000

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$436.000

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Corphita

USA . 3,588 parts In-Stock

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3,588

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Overview

Experience seamless connectivity and enhanced performance with the TRF4900PWRG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch quality and reliability. Ideal for cellphone applications, this compact IC offers exceptional value by delivering unparalleled efficiency and versatility. Stay ahead in the competitive market with the TRF4900PWRG4, providing you with the cutting-edge technology you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures a lightweight and durable package, making the product suitable for portable devices like cellphones.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly of the IC onto the PCB, saving space and reducing manufacturing costs.

Power Supplies (V): 3

Operating at a standard voltage of 3V makes the IC compatible with common power sources, ensuring widespread usability.

No. of Terminals: 24

Having 24 terminals provides ample connectivity options for interfacing with other components, enabling versatile functionality.

Maximum Operating Temperature: 60 °C

With a high maximum operating temperature of 60°C, the IC can withstand environmental conditions and maintain reliability under stress.

Minimum Operating Temperature: -20 °C

The low minimum operating temperature of -20°C ensures that the IC can function in a wide range of temperature conditions, enhancing its versatility.

Terminal Position: DUAL

Dual terminal positions provide redundancy and flexibility in connections, improving the reliability and performance of the IC.

Width: 4.4 mm

The compact width of 4.4mm allows for space-saving installation in densely populated PCB layouts, optimizing design efficiency.

Temperature Grade: COMMERCIAL

Designed for commercial use, this IC meets industry standards for performance and reliability in typical operating environments.

Technology: CMOS

Using CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and stability of the IC.

Technical Specifications

Cellphone ICs TRF4900PWRG4 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-G24

Length:

7.8 mm

No. of Functions:

1

No. of Terminals:

24

Maximum Operating Temperature:

60 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP24,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

.075 mA

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

4.4 mm

Trade Compliance

TRF4900PWRG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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