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CC115LRTKR

Texas Instruments

CC115LRTKR by Texas Instruments

CC115LRTKR by Texas Instruments is a cellphone IC with a square package and 20 terminals. It operates at temperatures ranging from -40 to 85 °C and has a nominal voltage of 3.6 V. This RF and baseband circuit is suitable for industrial applications.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 8,317 parts In-Stock

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Digiode

USA . 2,878 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Corohmni

South Africa . 363 parts In-Stock

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$7.156

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363

$7.156

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AZTECH Wire

Italy . 388 parts In-Stock

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$10.770

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388

$10.770

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Parana Technologies

USA . 506 parts In-Stock

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$11.339

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$11.768

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506

$11.339

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$11.768

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ChromeModa Solutions

Germany . 4,056 parts In-Stock

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$12.741

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$10.448

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$12.741

$10.448

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IDEA Electronic Components Group

UK . 895 parts In-Stock

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$12.741

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$12.104

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$11.467

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895

$12.741

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$16.612

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$15.781

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$15.781

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One Stop Electronics

USA . 355 parts In-Stock

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$284.000

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Ampacity Inc.

Singapore . 1,372 parts In-Stock

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$684.000

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Semicontronic

India . 1,240 parts In-Stock

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$940.000

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$916.500

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$911.800

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Lixinc

USA . 11,927 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,761 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,507 parts In-Stock

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Continental Prestige Electronics

USA . 2,895 parts In-Stock

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Argo Parts USA

USA . 2,119 parts In-Stock

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Authorized Procurement Solutions

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Corphita

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DigiPath Technology Company

USA . 518 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

The CC115LRTKR by Texas Instruments is a high-quality Cellphone IC that offers numerous benefits and advantages to customers. With its surface mount design and compact square package shape, this IC is both convenient and versatile. Manufactured by the reputable Texas Instruments, known for their exceptional quality products, customers can trust in the reliability and performance of the CC115LRTKR. Ideal for applications in RF and baseband circuits, this IC provides excellent power supplies and a wide temperature range, making it suitable for various industrial environments. Experience the value and benefits of the CC115LRTKR, a game-changer in the world of cellphone ICs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and enhances the product's resistance to impact, making it an excellent choice for a cellphone IC.

Surface Mount: YES

The surface mount feature allows for easy and hassle-free installation, making this cellphone IC highly convenient and suitable for various cellphone designs.

No. of Functions: 1

With a single function, this cellphone IC simplifies integration, reducing complexity and making it an efficient choice for cellphone applications.

Package Shape: SQUARE

The square package shape optimizes space utilization, allowing designers to make the most of compact cellphone designs while providing excellent performance.

Power Supplies (V): 1.8/3.6

The availability of multiple power supply options (1.8V and 3.6V) ensures compatibility with a wide range of cellphone systems, making it a versatile and adaptable choice.

No. of Terminals: 20

The 20 terminals provide ample connectivity options, enabling seamless integration with other components, enhancing flexibility, and making it an ideal choice for complex cellphone circuits.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of chip carrier, heat sink/slug, and very thin profile in the package style ensures effective heat dissipation, compact design, and excellent performance, making it an outstanding option for mobile devices.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85°C enhances the product's reliability and resilience under challenging environmental conditions, making it a dependable choice for cellphone applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature capability of -40°C ensures reliable operation even in extreme temperature conditions, making it a reliable choice for cellphone ICs in various climates.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel palladium gold terminal finish provides excellent corrosion resistance and electrical conductivity, ensuring reliable connections and extending the lifespan of the product.

Terminal Position: QUAD

The quad terminal position facilitates easy and secure soldering, enabling smooth assembly and enhancing the overall product reliability, making it an optimal choice for cellphone ICs.

Maximum Seated Height: 0.9 mm

The compact maximum seated height of 0.9mm allows integration in ultra-thin cellphone designs without compromising performance, making it an ideal choice for modern, slim smartphones.

Width: 4 mm

With a width of 4mm, this cellphone IC offers a compact form factor, allowing for efficient use of space, enabling sleek and portable cellphone designs.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time allowed at the peak reflow temperature of 30 seconds ensures proper soldering and component reliability, making it a suitable choice for automated assembly processes.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this cellphone IC maintains robustness during soldering, enabling reliable connections and long-lasting performance.

Length: 4 mm

The compact length of 4mm contributes to the overall space-saving design of a cellphone, allowing manufacturers to create compact and portable devices.

Temperature Grade: INDUSTRIAL

The temperature grade of industrial signifies the ability of this cellphone IC to withstand demanding operating conditions, making it a reliable choice for industrial-grade applications.

Terminal Form: NO LEAD

The no-lead terminal form reduces environmental impact and enhances the product's sustainability, making it an environmentally friendly choice for cellphone ICs.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Designed for RF and baseband circuit applications, this cellphone IC provides excellent connectivity and signal processing capabilities, making it an optimal choice for reliable communication in cellphones.

Nominal Supply Voltage: 3.6 V

With a nominal supply voltage of 3.6V, this cellphone IC offers compatibility with standard cellphone power systems, making it a suitable choice for various cellphone designs.

Terminal Pitch: 0.5 mm

The compact terminal pitch of 0.5mm allows for efficient layout designs and high-density integration, enabling manufacturers to create sleek and advanced cellphones.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, this cellphone IC can withstand moderate moisture exposure during assembly and storage, ensuring product integrity and reliability.

Technical Specifications

Cellphone ICs CC115LRTKR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N20

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC20,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3.6 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

CC115LRTKR Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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