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CC1100RTKRG3

Texas Instruments

CC1100RTKRG3 by Texas Instruments

CC1100RTKRG3 by Texas Instruments is a cellphone IC with 20 terminals, operating at temperatures from -40 to 85°C. It features a supply voltage of 1.8/3.6V, RF and baseband circuit technology, and a compact square package suitable for telecom applications.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,715 parts In-Stock

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Digiode

USA . 1,891 parts In-Stock

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Native Components

USA . 802 parts In-Stock

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$0.059

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$0.057

802

$0.059

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$0.057

AZTECH Wire

Italy . 737 parts In-Stock

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$5.678

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737

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Parana Technologies

USA . 2,373 parts In-Stock

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$7.873

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$8.426

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DigiPath Technology Company

USA . 137 parts In-Stock

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$8.669

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137

$8.669

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ChromeModa Solutions

Germany . 2,897 parts In-Stock

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$8.846

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$7.254

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IDEA Electronic Components Group

UK . 903 parts In-Stock

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$8.846

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$8.404

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$7.961

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903

$8.846

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Component Stockers USA

USA . 701 parts In-Stock

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$99.990

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One Stop Electronics

USA . 345 parts In-Stock

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Lixinc

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Corphita

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Northwest PG Solutions

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Overview

Elevate your cellphone technology with the CC1100RTKRG3 by Texas Instruments. This high-quality Cellphone IC boasts cutting-edge design and precision engineering, making it a top choice for telecom applications. With its sleek SQUARE package shape and advanced CMOS technology, this RF and Baseband Circuit promises superior performance and reliability. Trust in Texas Instruments to deliver excellence in every detail, from the very thin profile to the matte tin terminal finish. Upgrade your devices with the CC1100RTKRG3 and experience the value of innovation firsthand.

Feature Benefit Bullets

Surface Mount: YES

Ease of installation and space-saving on the PCB due to surface mount technology.

Package Shape: SQUARE

Square package shape provides better thermal dissipation and efficient use of board space.

Power Supplies (V): 1.8/3.6

Support for multiple power supply voltages allows for versatile usage in different applications.

No. of Terminals: 20

Sufficient number of terminals for connectivity within the device or with external components.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Multiple package styles offer flexibility in design and thermal management.

Maximum Operating Temperature: 85 °C

Suitable for operation in a wide range of temperature environments.

Minimum Operating Temperature: -40 °C

Can withstand low-temperature environments without affecting performance.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and reliability for the connections.

Terminal Position: QUAD

Quad terminal position enables efficient routing and connection of signals.

Maximum Seated Height: 0.95 mm

Low profile design for space-constrained applications.

Width: 4 mm

Compact width for fitting into tight spaces on the PCB.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for reliable soldering during assembly process within specified time limits.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during manufacturing processes without damage.

Length: 4 mm

Compact length for efficient board real estate utilization.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications where robust performance is required.

Technology: CMOS

CMOS technology offers low power consumption and high reliability.

Terminal Form: NO LEAD

Lead-free terminal form for compliance with environmental regulations and improved solder joint reliability.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Combination of RF and baseband circuits for efficient signal processing in telecommunications applications.

Nominal Supply Voltage: 3 V

Stable supply voltage for consistent performance in various operating conditions.

Terminal Pitch: 0.5 mm

Fine pitch terminals enable high-density mounting and interconnection.

Moisture Sensitivity Level (MSL): 3

Moderate moisture sensitivity level for safe handling and storage.

Technical Specifications

Cellphone ICs CC1100RTKRG3 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N20

JESD-609 Code:

e3

Length:

4 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

20

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC20,.16SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

Maximum Seated Height:

.95 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

CC1100RTKRG3 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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