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CC1111F32RSPRG3

Texas Instruments

CC1111F32RSPRG3 by Texas Instruments

The Texas Instruments CC1111F32RSPRG3 is a cellphone IC with 36 terminals in a square chip carrier package. Operating at temperatures from 0 to 85°C, it features RF and baseband circuit technology with a supply voltage of 3V. Ideal for telecom applications, this IC has a terminal pitch of 0.5mm and is surface mountable.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,534 parts In-Stock

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7,534

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Digiode

USA . 2,456 parts In-Stock

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2,456

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Distributors (Availability)

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AZTECH Wire

Italy . 633 parts In-Stock

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$9.291

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633

$9.291

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Parana Technologies

USA . 520 parts In-Stock

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$9.816

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$10.386

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520

$9.816

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$10.386

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DigiPath Technology Company

USA . 2,331 parts In-Stock

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$10.808

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2,331

$10.808

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ChromeModa Solutions

Germany . 4,214 parts In-Stock

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$11.029

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$9.044

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4,214

$11.029

$9.044

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IDEA Electronic Components Group

UK . 2,195 parts In-Stock

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$11.029

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$10.478

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$9.926

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2,195

$11.029

$10.478

$9.926

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Corohmni

South Africa . 78 parts In-Stock

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$11.405

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78

$11.405

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Ampacity Inc.

Singapore . 714 parts In-Stock

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$853.000

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714

$853.000

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One Stop Electronics

USA . 379 parts In-Stock

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$932.000

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379

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Continental Prestige Electronics

USA . 6,409 parts In-Stock

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Argo Parts USA

USA . 3,450 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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2,000

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Corphita

USA . 902 parts In-Stock

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902

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Overview

Experience superior quality and performance with the CC1111F32RSPRG3 by Texas Instruments. Known for their cutting-edge technology and innovation, Texas Instruments delivers top-of-the-line Cellphone ICs that guarantee seamless connectivity and optimal functionality. Whether you're designing a smartphone or a wearable device, this RF and Baseband Circuit is the perfect solution to meet your needs. Trust in Texas Instruments to provide reliable, high-quality products that exceed expectations. Elevate your projects with the CC1111F32RSPRG3 and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY packaging material is cost-effective and lightweight, making the product easier to handle and reducing overall manufacturing costs.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation onto circuit boards, saving time and simplifying the assembly process.

Power Supplies (V): 3

Operating at a low voltage of 3V reduces power consumption and increases the efficiency of the cell phone ICs.

No. of Terminals: 36

Having a higher number of terminals allows for more connectivity options and functionality within the cell phone ICs.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures that the cell phone ICs can withstand heat stress and operate reliably in various environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the cell phone ICs energy-efficient and reliable.

Nominal Supply Voltage: 3 V

The nominal supply voltage of 3V ensures compatibility with standard power sources and promotes efficient energy consumption.

Technical Specifications

Cellphone ICs CC1111F32RSPRG3 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N36

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

CC1111F32RSPRG3 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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