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CC2420-RTR2

Texas Instruments

CC2420-RTR2 by Texas Instruments

CC2420-RTR2 by Texas Instruments is a cellphone IC with 48 terminals, operating at -40 to 85°C. It features a supply voltage of 1.8V, CMOS technology, and RF/baseband circuitry. This surface-mount chip carrier is ideal for telecom applications due to its compact square package shape and low profile design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 4,105 parts In-Stock

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Vyrian

USA . 2,134 parts In-Stock

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Native Components

USA . 803 parts In-Stock

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$2.065

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Northwest PG Solutions

USA . 951 parts In-Stock

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$2.271

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$2.271

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AZTECH Wire

Italy . 659 parts In-Stock

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$6.180

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Parana Technologies

USA . 674 parts In-Stock

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$14.343

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$14.793

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DigiPath Technology Company

USA . 1,389 parts In-Stock

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$15.794

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ChromeModa Solutions

Germany . 1,315 parts In-Stock

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$16.116

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$13.215

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IDEA Electronic Components Group

UK . 1,249 parts In-Stock

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$16.116

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$15.310

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$14.504

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Ampacity Inc.

Singapore . 742 parts In-Stock

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$368.000

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Semicontronic

India . 1,141 parts In-Stock

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$686.000

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$668.850

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One Stop Electronics

USA . 1,264 parts In-Stock

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Corphita

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Corohmni

South Africa . 387 parts In-Stock

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Overview

Elevate your cellphone technology with the CC2420-RTR2 by Texas Instruments, a cutting-edge RF and baseband circuit that promises unrivaled performance and reliability. With a sleek square package shape and industrial-grade temperature grade, this IC is designed for seamless integration into your devices. Experience the quality and expertise of Texas Instruments in every aspect of this product, from its innovative CMOS technology to its very thin profile package style. Trust in the superior power supplies and terminal form of the CC2420-RTR2 to elevate your cellphone capabilities like never before.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient manufacturing and assembly processes, making this product a convenient choice for manufacturers.

Package Shape: SQUARE

The square package shape provides a compact design, saving space on a circuit board and enabling more efficient layout and integration in devices.

Power Supplies (V): 1.8,1.8/3.3

With multiple power supply options, this product offers flexibility in voltage requirements, allowing for compatibility with a wide range of devices and applications.

No. of Terminals: 48

The high number of terminals allows for a greater amount of connectivity options, facilitating more complex circuit designs and functionalities.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The variety of package styles offers different thermal and mechanical characteristics, catering to specific needs for heat dissipation, space constraints, and overall performance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand demanding environmental conditions, ensuring reliable performance in a wide range of applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows this product to function effectively in cold environments, making it suitable for diverse usage scenarios.

Terminal Position: QUAD

The quad terminal position offers efficient signal routing and connectivity, improving overall circuit performance and reliability.

Maximum Seated Height: 0.9 mm

The low maximum seated height helps in achieving a thinner profile for the overall device or system, enabling sleek and compact designs.

Width: 7 mm

The compact width of this product allows for space-saving integration on circuit boards, making it a suitable choice for devices with size constraints.

Length: 7 mm

The short length contributes to a more streamlined design, aiding in efficient layout and placement within electronic devices.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this product meets the rigorous standards and requirements of industrial operating environments, ensuring reliable performance in challenging conditions.

Technology: CMOS

Utilizing CMOS technology offers advantages such as low power consumption, high noise immunity, and compatibility with a wide range of devices, making this product a cost-effective and versatile choice.

Terminal Form: NO LEAD

The no-lead terminal form improves thermal performance, enhances reliability, and simplifies the manufacturing process, offering a more durable and efficient solution for electronic applications.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Combining RF and baseband circuit functionality in a single IC simplifies design and integration for telecom applications, leading to cost savings and improved performance.

Nominal Supply Voltage: 1.8 V

With a low nominal supply voltage, this product is energy-efficient and suitable for battery-powered devices, providing extended battery life and reducing power consumption.

Terminal Pitch: 0.5 mm

The small terminal pitch enables high-density mounting and compact designs, enhancing overall performance and functionality in space-constrained devices.

Technical Specifications

Cellphone ICs CC2420-RTR2 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N48

Length:

7 mm

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Power Supplies (V):

1.8,1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

7 mm

Trade Compliance

CC2420-RTR2 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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