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CC2420ZRTCR

Texas Instruments

CC2420ZRTCR by Texas Instruments

CC2420ZRTCR by Texas Instruments is a cellphone IC with 48 terminals in a square package. It operates b/w -40 to 85°C, with a supply voltage of 1.8V. This RF and baseband circuit has a terminal pitch of 0.5mm, making it suitable for industrial telecom applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,401 parts In-Stock

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Digiode

USA . 833 parts In-Stock

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833

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Distributors (Availability)

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Native Components

USA . 781 parts In-Stock

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$0.232

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$0.223

781

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Northwest PG Solutions

USA . 735 parts In-Stock

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$0.255

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$0.225

735

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Parana Technologies

USA . 2,195 parts In-Stock

1+ parts

$11.177

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$1,037.919

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$10.059

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2,195

$11.177

$1,037.919

$10.059

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DigiPath Technology Company

USA . 1,274 parts In-Stock

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$12.307

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IDEA Electronic Components Group

UK . 2,348 parts In-Stock

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$12.558

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$11.930

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$11.302

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2,348

$12.558

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$11.302

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ChromeModa Solutions

Germany . 736 parts In-Stock

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$12.558

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$10.298

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$12.558

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AZTECH Wire

Italy . 696 parts In-Stock

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$12.832

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One Stop Electronics

USA . 680 parts In-Stock

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$642.000

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Kepictronics

USA . 50,000 parts In-Stock

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Corphita

USA . 4,247 parts In-Stock

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Overview

Elevate your cellphone performance with the Texas Instruments CC2420ZRTCR. Crafted with precision and quality, this innovative Cellphone IC offers unparalleled reliability and efficiency. Experience seamless connectivity and enhanced functionality with this cutting-edge technology. Ideal for a wide range of applications, this product is designed to meet the diverse needs of modern consumers. Trust in Texas Instruments to deliver superior products that exceed expectations. Upgrade your device today and unlock a world of possibilities with the CC2420ZRTCR.

Feature Benefit Bullets

Surface Mount: YES

This feature allows for easy and efficient assembly onto circuit boards, saving time and labor costs.

Package Shape: SQUARE

The square shape helps with efficient use of space on the circuit board, maximizing the number of components that can be placed.

Power Supplies (V): 1.8, 1.8/3.3

Supporting multiple power supply voltages allows for flexibility in system design and compatibility with different components.

No. of Terminals: 48

Having a high number of terminals enables connections to various other components, facilitating communication and data transfer.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Offers different package styles to suit different application requirements, providing versatility in integration and optimization.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions, ensuring reliability and durability.

Minimum Operating Temperature: -40 °C

The wide temperature range allows for operation in extreme cold conditions, making it suitable for a variety of environments.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable connections and long-term performance.

Terminal Position: QUAD

The quad terminal position allows for efficient routing of signals and power, improving overall system performance and reliability.

Maximum Seated Height: 0.9 mm

The low seated height minimizes the overall profile of the component, making it suitable for compact and slim devices.

Width: 7 mm

The compact width enables efficient placement on the circuit board, contributing to space-saving design and optimization.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time helps prevent damage to the component during assembly, ensuring quality and reliability in manufacturing processes.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this product can withstand the soldering process without degradation, ensuring robust solder joints.

Length: 7 mm

The compact length allows for efficient use of space on the circuit board, contributing to overall system optimization and performance.

Temperature Grade: INDUSTRIAL

Designed for industrial applications, this product meets the stringent requirements for reliability and durability in demanding environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy-efficient and reliable in operation.

Terminal Form: NO LEAD

Having a lead-free terminal form complies with environmental regulations and ensures compatibility with lead-free soldering processes.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Combining RF and baseband circuitry in one IC simplifies design complexity, reduces component count, and enhances overall performance.

Nominal Supply Voltage: 1.8 V

The 1.8V supply voltage is common in many applications, making this product compatible with a wide range of systems and devices.

Terminal Pitch: 0.5 mm

The fine terminal pitch allows for high density mounting, optimizing circuit board space and enabling miniaturization of devices.

Moisture Sensitivity Level (MSL): 3

The MSL 3 rating indicates that this product has moderate sensitivity to moisture, requiring appropriate handling and storage to maintain performance.

Technical Specifications

Cellphone ICs CC2420ZRTCR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8,1.8/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

1.8 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Trade Compliance

CC2420ZRTCR Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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