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CC1110F8RHH

Texas Instruments

CC1110F8RHH by Texas Instruments

CC1110F8RHH by Texas Instruments is a Cellphone IC with 36 terminals in a square chip carrier package. It operates at temperatures ranging from -40 to 85°C, making it suitable for industrial applications. This RF and baseband circuit has a supply voltage of 3V and uses CMOS technology for efficient performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,821 parts In-Stock

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2,821

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Digiode

USA . 365 parts In-Stock

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365

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Distributors (Availability)

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Native Components

USA . 565 parts In-Stock

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$0.248

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$0.238

565

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$0.238

Northwest PG Solutions

USA . 1,276 parts In-Stock

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$0.273

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$0.241

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Parana Technologies

USA . 2,206 parts In-Stock

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$11.462

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$11.879

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2,206

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$11.879

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DigiPath Technology Company

USA . 82 parts In-Stock

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$12.621

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82

$12.621

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ChromeModa Solutions

Germany . 6,214 parts In-Stock

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$12.879

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$10.561

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$12.879

$10.561

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IDEA Electronic Components Group

UK . 1,677 parts In-Stock

1+ parts

$12.879

100+ parts

$12.235

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$11.591

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1,677

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$11.591

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AZTECH Wire

Italy . 670 parts In-Stock

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$13.131

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One Stop Electronics

USA . 521 parts In-Stock

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$513.000

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Corphita

USA . 4,289 parts In-Stock

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Overview

Unleash the power of connectivity with the CC1110F8RHH by Texas Instruments! This cutting-edge cellphone IC offers unmatched quality and reliability, thanks to its world-renowned manufacturer. Ideal for a wide range of applications, this innovative product delivers exceptional value and benefits to customers looking for seamless communication solutions. Trust Texas Instruments to provide you with top-of-the-line technology that exceeds expectations. Embrace the future of connectivity with the CC1110F8RHH today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and can withstand high temperatures, making it a reliable choice for cellphone ICs.

Surface Mount: YES

Surface mount technology enables easy and efficient assembly of the ICs onto the circuit board, saving space and improving overall reliability.

Power Supplies (V): 3

Operating at a voltage of 3V allows for compatibility with a wide range of cellphones, ensuring consistent performance.

No. of Terminals: 36

Having 36 terminals provides ample connectivity options for various functions within the cellphone, allowing for versatility in design and functionality.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this IC can function under a range of conditions without compromising performance or reliability.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of nickel, palladium, and gold as terminal finish materials ensures excellent conductivity, corrosion resistance, and longevity for the ICs.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and compatibility with various digital devices, making it an ideal choice for efficient cellphone ICs.

Nominal Supply Voltage: 3 V

Having a nominal supply voltage of 3V ensures compatibility with common power sources in cellphone applications, enhancing ease of integration.

Moisture Sensitivity Level (MSL): 3

A moisture sensitivity level of 3 indicates that the ICs are moderately sensitive to moisture, but suitable for use in controlled environments typical of cellphone assemblies.

Technical Specifications

Cellphone ICs CC1110F8RHH attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N36

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

CC1110F8RHH Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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