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LMH6522SQ

Texas Instruments

LMH6522SQ by Texas Instruments

Texas Instruments LMH6522SQ is a 54-terminal cellphone IC with RF and baseband circuit. Operating b/w -40 to 85°C, it has a nominal voltage of 5V. This surface-mount chip carrier is ideal for telecom applications due to its compact size and industrial temperature grade.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,898 parts In-Stock

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6,898

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Digiode

USA . 2,007 parts In-Stock

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2,007

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Anansix

USA . 1,975 parts In-Stock

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1,975

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Distributors (Availability)

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AZTECH Wire

Italy . 699 parts In-Stock

1+ parts

$11.924

100+ parts

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699

$11.924

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Parana Technologies

USA . 568 parts In-Stock

1+ parts

$13.435

100+ parts

-

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$13.954

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568

$13.435

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$13.954

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DigiPath Technology Company

USA . 2,184 parts In-Stock

1+ parts

$14.793

100+ parts

$13.610

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2,184

$14.793

$13.610

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ChromeModa Solutions

Germany . 1,262 parts In-Stock

1+ parts

$15.095

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$12.378

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1,262

$15.095

$12.378

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IDEA Electronic Components Group

UK . 877 parts In-Stock

1+ parts

$15.095

100+ parts

$14.340

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$13.586

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877

$15.095

$14.340

$13.586

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One Stop Electronics

USA . 1,045 parts In-Stock

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$790.000

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1,045

$790.000

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Corphita

USA . 1,022 parts In-Stock

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1,022

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Overview

Experience the next level of performance with the LMH6522SQ by Texas Instruments - a high-quality cellphone IC designed for telecom applications. With Texas Instruments' reputation for excellence in manufacturing, this chip offers unmatched value and reliability. Perfect for RF and baseband circuits, this surface mount IC boasts a compact design and wide temperature range, making it ideal for industrial-grade applications. Elevate your products with the LMH6522SQ and enjoy top-notch performance and durability.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly, making this product suitable for high volume production and reducing overall costs.

Package Shape: RECTANGULAR

The rectangular shape provides compatibility with standard PCB layouts and allows for efficient use of space on the circuit board.

No. of Terminals: 54

Having a high number of terminals allows for more connections and functionalities within the IC, making it versatile and suitable for complex cell phone applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can withstand challenging conditions and maintain reliable performance even in demanding environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures that the IC can function effectively in a wide range of climates and temperatures, increasing its overall reliability.

Terminal Position: QUAD

The quad terminal position allows for efficient routing of connections and signal paths within the IC, enhancing performance and reducing signal interference.

Maximum Seated Height: 0.8 mm

The low maximum seated height makes this IC suitable for slim and compact cell phone designs, enabling manufacturers to create sleek and portable devices.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures that this IC can meet the demands of rugged industrial environments, making it a reliable choice for robust cell phone applications.

Nominal Supply Voltage: 5 V

The 5V nominal supply voltage is a common standard in cell phone applications, ensuring compatibility and ease of integration with existing systems and components.

Terminal Pitch: 0.5 mm

The small terminal pitch allows for high density packaging and miniaturization, making this IC suitable for space-constrained cell phone designs without sacrificing performance.

Technical Specifications

Cellphone ICs LMH6522SQ attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-XQCC-N54

Length:

10 mm

No. of Functions:

1

No. of Terminals:

54

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Seated Height:

.8 mm

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5.5 mm

Trade Compliance

LMH6522SQ Telecommunications trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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