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LMH6522SQ/NOPB

Texas Instruments

LMH6522SQ/NOPB by Texas Instruments

LMH6522SQ/NOPB by Texas Instruments is a 54-terminal cellphone IC with a package style of CHIP CARRIER. It operates b/w -40 to 85°C, has 4 channels, and a gain tolerance of 25.74 dB. This RF and baseband circuit is ideal for industrial telecom applications due to its low supply current of 485 mA at 5V.

Median Price

$14.880

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 82,192 parts In-Stock

1+ parts

$14.880

100+ parts

$12.998

1k+ parts

$8.964

10k+ parts

-

82,192

$14.880

$12.998

$8.964

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 5,037 parts In-Stock

1+ parts

$14.136

100+ parts

-

1k+ parts

-

10k+ parts

-

5,037

$14.136

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-

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Vyrian

USA . 4,739 parts In-Stock

1+ parts

$14.880

100+ parts

-

1k+ parts

-

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4,739

$14.880

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Anansix

USA . 2,138 parts In-Stock

1+ parts

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2,138

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 112 parts In-Stock

1+ parts

$7.504

100+ parts

-

1k+ parts

$8.008

10k+ parts

-

112

$7.504

-

$8.008

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DigiPath Technology Company

USA . 551 parts In-Stock

1+ parts

$8.263

100+ parts

-

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-

10k+ parts

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551

$8.263

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ChromeModa Solutions

Germany . 2,701 parts In-Stock

1+ parts

$8.432

100+ parts

$6.914

1k+ parts

-

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-

2,701

$8.432

$6.914

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IDEA Electronic Components Group

UK . 838 parts In-Stock

1+ parts

$8.432

100+ parts

$8.010

1k+ parts

$7.589

10k+ parts

-

838

$8.432

$8.010

$7.589

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Corphita

USA . 1,775 parts In-Stock

1+ parts

$13.392

100+ parts

-

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1,775

$13.392

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Lixinc

USA . 19,039 parts In-Stock

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19,039

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Perfect Parts

USA . 3,503 parts In-Stock

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3,503

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Overview

Enhance the performance of your cellphone with the LMH6522SQ/NOPB by Texas Instruments. This top-quality IC is designed to meet industrial standards, ensuring reliability and durability. With 4 channels and a maximum gain tolerance of 25.74 dB, this chip delivers outstanding RF and baseband circuit performance. Its compact size and surface mount capability make it easy to integrate into your device. Trust Texas Instruments for cutting-edge technology that elevates your cellphone's functionality. Upgrade today and experience the difference!

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for efficient and compact assembly of the product, making it suitable for modern manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape helps optimize space utilization and allows for easy integration into various electronic devices.

No. of Terminals: 54

Having a high number of terminals enables the IC to support multiple functionalities and complex circuit designs.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance even in demanding environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows for operation in a wide range of temperature conditions, enhancing versatility.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring long-lasting connections.

Width: 5.5 mm

Compact width makes the IC suitable for space-constrained applications and enhances overall design flexibility.

Nominal Supply Voltage: 5 V

The nominal supply voltage of 5V is a common standard in many electronic systems, making integration easier.

Moisture Sensitivity Level (MSL): 2

MSL level of 2 indicates that the IC is moderately sensitive to moisture, allowing for proper handling and storage procedures.

Technical Specifications

Cellphone ICs LMH6522SQ/NOPB attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

Maximum Gain Tolerance:

25.74 dB

JESD-30 Code:

R-XQCC-N54

JESD-609 Code:

e3

Length:

10 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

4

No. of Functions:

1

No. of Terminals:

54

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Current:

485 mA

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5.5 mm

Trade Compliance

LMH6522SQ/NOPB Telecommunications trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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