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CC1111F32RSPG3

Texas Instruments

CC1111F32RSPG3 by Texas Instruments

CC1111F32RSPG3 by Texas Instruments is a cellphone IC with 36 terminals in a square chip carrier package. Operating b/w 0-85°C, it features RF and baseband circuit technology, with a supply voltage of 3V. Ideal for telecom applications, this surface-mount IC has a terminal pitch of 0.5mm and MSL rating of 3.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,407 parts In-Stock

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4,407

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Digiode

USA . 2,387 parts In-Stock

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2,387

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,084 parts In-Stock

1+ parts

$10.247

100+ parts

-

1k+ parts

$10.781

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2,084

$10.247

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$10.781

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DigiPath Technology Company

USA . 2,231 parts In-Stock

1+ parts

$11.283

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2,231

$11.283

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ChromeModa Solutions

Germany . 6,108 parts In-Stock

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$11.513

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$9.441

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6,108

$11.513

$9.441

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IDEA Electronic Components Group

UK . 709 parts In-Stock

1+ parts

$11.513

100+ parts

$10.937

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$10.362

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709

$11.513

$10.937

$10.362

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AZTECH Wire

Italy . 800 parts In-Stock

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$11.917

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800

$11.917

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Semicontronic

India . 1,178 parts In-Stock

1+ parts

$129.000

100+ parts

$125.775

1k+ parts

$125.130

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1,178

$129.000

$125.775

$125.130

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One Stop Electronics

USA . 582 parts In-Stock

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$491.000

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582

$491.000

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Native Components

USA . 150 parts In-Stock

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$572.930

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$561.471

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$555.742

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$550.013

150

$572.930

$561.471

$555.742

$550.013

Northwest PG Solutions

USA . 1,343 parts In-Stock

1+ parts

$630.223

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1,343

$630.223

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Ampacity Inc.

Singapore . 376 parts In-Stock

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$653.000

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376

$653.000

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Corphita

USA . 4,589 parts In-Stock

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Corohmni

South Africa . 120 parts In-Stock

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120

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Overview

With the CC1111F32RSPG3 by Texas Instruments, you can trust that you are getting a top-quality product from a reputable manufacturer. As a leader in the industry, Texas Instruments ensures that their cellphone ICs are reliable and efficient. This versatile chip carrier is perfect for a wide range of applications, providing customers with exceptional value and performance. Whether you're looking to upgrade your smartphone or design cutting-edge telecommunications equipment, the CC1111F32RSPG3 has you covered. Trust Texas Instruments to deliver excellence with every product they create.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the IC, making it suitable for use in various environments.

Surface Mount: YES

Enables easy and efficient installation onto circuit boards, saving time and effort during assembly.

Package Shape: SQUARE

Allows for efficient use of space on the circuit board, making the overall design more compact and streamlined.

Power Supplies (V): 3

Operates at a standard voltage level, ensuring compatibility with a wide range of devices.

No. of Terminals: 36

Provides multiple connection points for interfacing with other components, offering versatility in design and functionality.

Package Style (Meter): CHIP CARRIER

Offers enhanced thermal performance and electrical characteristics, improving the overall reliability of the IC.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for applications where heat may be a concern.

Minimum Operating Temperature: 0 °C

Can operate in cold environments without compromising performance, ensuring reliability in various conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance, ensuring long-term reliability and performance.

Terminal Position: QUAD

Offers a secure and stable connection to the circuit board, reducing the risk of signal interference or loss.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient and quick soldering of the IC onto the circuit board, reducing production time.

Peak Reflow Temperature °C: 260

Withstands high temperatures during the soldering process, ensuring a secure and reliable connection.

Technology: CMOS

Consumes low power and offers high noise immunity, making it suitable for battery-operated devices and noise-sensitive applications.

Terminal Form: NO LEAD

Eliminates the use of lead, making the IC environmentally friendly and compliant with regulations.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Combines RF and baseband functionality in a single IC, simplifying the design and reducing cost.

Nominal Supply Voltage: 3 V

Operates at a standard voltage level, ensuring compatibility with common power sources and devices.

Terminal Pitch: 0.5 mm

Provides fine spacing between terminals, allowing for high-density mounting and compact designs.

Moisture Sensitivity Level (MSL): 3

Can withstand moderate levels of moisture exposure, making it suitable for use in environments with varying humidity levels.

Technical Specifications

Cellphone ICs CC1111F32RSPG3 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N36

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

CC1111F32RSPG3 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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