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CC1131TRHBRG4Q1

Texas Instruments

CC1131TRHBRG4Q1 by Texas Instruments

CC1131TRHBRG4Q1 by Texas Instruments is a cellphone IC with 32 terminals, operating at -40 to 105°C. It features a supply voltage of 3V, RF and baseband circuit for telecom applications, and AEC-Q100 screening level for industrial use.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,380 parts In-Stock

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5,380

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Digiode

USA . 2,920 parts In-Stock

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2,920

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Distributors (Availability)

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Native Components

USA . 171 parts In-Stock

1+ parts

$0.138

100+ parts

-

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$0.132

171

$0.138

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$0.132

Northwest PG Solutions

USA . 283 parts In-Stock

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$0.151

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-

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$0.134

283

$0.151

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$0.134

AZTECH Wire

Italy . 811 parts In-Stock

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$5.810

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811

$5.810

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Parana Technologies

USA . 1,202 parts In-Stock

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$8.291

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$8.913

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1,202

$8.291

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$8.913

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$8.813

100+ parts

$8.020

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$7.227

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200

$8.813

$8.020

$7.227

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IDEA Electronic Components Group

UK . 789 parts In-Stock

1+ parts

$9.316

100+ parts

$8.850

1k+ parts

$8.384

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789

$9.316

$8.850

$8.384

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ChromeModa Solutions

Germany . 31 parts In-Stock

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$9.316

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$7.639

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31

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$7.639

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Corohmni

South Africa . 15 parts In-Stock

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$12.238

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15

$12.238

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One Stop Electronics

USA . 286 parts In-Stock

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$309.000

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286

$309.000

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Lixinc

USA . 9,210 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 3,139 parts In-Stock

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DigiPath Technology Company

USA . 183 parts In-Stock

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$8.399

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183

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$8.399

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Overview

The Texas Instruments CC1131TRHBRG4Q1 offers top-notch quality and reliability in the realm of Cellphone ICs. With a focus on durability and performance, Texas Instruments is a trusted manufacturer known for delivering cutting-edge solutions. This versatile product is ideal for various applications in the telecommunications industry, providing customers with seamless connectivity and enhanced functionality. Experience the value and benefits that this innovative IC brings to your projects, setting you apart from the competition with its advanced features and superior performance. Trust Texas Instruments to deliver excellence in every aspect of your design needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material ensures durability and reliability of the cellphone ICs.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly of the cellphone ICs onto circuit boards, reducing manufacturing time and cost.

Package Shape: SQUARE

The square package shape allows for efficient use of space on circuit boards, making the cellphone ICs suitable for compact and miniaturized devices.

Power Supplies (V): 1.8/3.6

The wide range of power supply options (1.8V to 3.6V) makes the cellphone ICs versatile and compatible with different voltage requirements in mobile devices.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature of 105°C, the cellphone ICs can withstand heat and operate effectively in demanding conditions.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Being designed for RF and baseband circuits, these cellphone ICs are optimized for efficient communication and data processing in mobile devices.

Technical Specifications

Cellphone ICs CC1131TRHBRG4Q1 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N32

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

32

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC32,.2SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5 mm

Trade Compliance

CC1131TRHBRG4Q1 Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.G

ECCN Governance

EAR

HTS

8542.39.00.01

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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