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CC1150-RTY1

Texas Instruments

CC1150-RTY1 by Texas Instruments

CC1150-RTY1 by Texas Instruments is a cellphone IC with 16 terminals, operating at -40 to 85°C. It features a supply voltage of 3V, RF and baseband circuitry, and CMOS technology. This surface-mount chip carrier has a square shape, 0.65mm terminal pitch, and MSL level of 3 for industrial applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,272 parts In-Stock

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Digiode

USA . 4,257 parts In-Stock

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Native Components

USA . 910 parts In-Stock

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$0.108

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$0.103

910

$0.108

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$0.103

Northwest PG Solutions

USA . 2,340 parts In-Stock

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$0.119

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$0.105

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$0.105

AZTECH Wire

Italy . 863 parts In-Stock

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$13.082

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863

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Parana Technologies

USA . 329 parts In-Stock

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$14.277

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$14.730

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329

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DigiPath Technology Company

USA . 390 parts In-Stock

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$15.721

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$14.463

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390

$15.721

$14.463

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IDEA Electronic Components Group

UK . 2,090 parts In-Stock

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$16.042

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$15.240

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$14.438

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$16.042

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ChromeModa Solutions

Germany . 1,782 parts In-Stock

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$16.042

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$13.154

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One Stop Electronics

USA . 1,387 parts In-Stock

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$408.000

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Ampacity Inc.

Singapore . 1,424 parts In-Stock

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$756.000

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Corphita

USA . 3,404 parts In-Stock

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Overview

Experience superior quality and performance with the Texas Instruments CC1150-RTY1, a top-notch Cellphone IC that offers cutting-edge technology and reliability. Designed by a trusted manufacturer, this surface-mount device is ideal for a wide range of applications. With its advanced features and efficient design, the CC1150-RTY1 delivers exceptional value and benefits to customers seeking high-quality components. Upgrade your products with this innovative solution and enjoy the advantages it brings to your projects.

Feature Benefit Bullets

Surface Mount: YES

Easy to mount on a circuit board, reducing assembly time and cost.

Package Shape: SQUARE

Compact shape saves space on the circuit board.

Power Supplies (V): 1.8/3.6

Compatible with a wide range of power supply voltages, offering flexibility in application.

No. of Terminals: 16

Sufficient number of terminals for connecting various components in the cellphone IC.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Various package styles provide options for different mounting and cooling requirements.

Maximum Operating Temperature: 85 °C

High operating temperature range ensures reliable performance even under demanding conditions.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows operation in both high and low temperature environments.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality terminal finish for reliable connections.

Terminal Position: QUAD

Quad terminal position facilitates easy and secure mounting on the circuit board.

Maximum Seated Height: 0.95 mm

Low profile design for space-constrained applications.

Width: 4 mm

Compact width for efficient use of space on the circuit board.

Maximum Time At Peak Reflow Temperature (s): 30

Good thermal performance during soldering process.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering without damage.

Length: 4 mm

Compact length for efficient use of space on the circuit board.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications with robust performance in harsh environments.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation.

Terminal Form: NO LEAD

Lead-free terminal form for environmental and health safety.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Designed for telecommunications applications with integrated RF and baseband circuitry.

Nominal Supply Voltage: 3 V

Optimal supply voltage for efficient operation of the cellphone IC.

Terminal Pitch: 0.65 mm

Fine terminal pitch for compact layout and high density integration.

Moisture Sensitivity Level (MSL): 3

Moderate moisture sensitivity level for handling and storage.

Technical Specifications

Cellphone ICs CC1150-RTY1 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N16

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC16,.16SQ,25

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.8/3.6

Qualification:

Not Qualified

Maximum Seated Height:

.95 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

CC1150-RTY1 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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