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CC2510F32RHH

Texas Instruments

CC2510F32RHH by Texas Instruments

CC2510F32RHH by Texas Instruments is a cellphone IC with 36 terminals in a square chip carrier package. It operates b/w -40 to 85°C, with a supply voltage of 3V. This RF and baseband circuit technology has a terminal pitch of 0.5mm, making it suitable for industrial telecom applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,070 parts In-Stock

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Digiode

USA . 4,336 parts In-Stock

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Parana Technologies

USA . 1,661 parts In-Stock

1+ parts

$10.123

100+ parts

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$10.669

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1,661

$10.123

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$10.669

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Native Components

USA . 29 parts In-Stock

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$10.850

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29

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DigiPath Technology Company

USA . 604 parts In-Stock

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$11.147

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604

$11.147

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IDEA Electronic Components Group

UK . 2,115 parts In-Stock

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$11.374

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$10.805

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$10.237

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2,115

$11.374

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$10.237

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ChromeModa Solutions

Germany . 149 parts In-Stock

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$11.374

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$9.327

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149

$11.374

$9.327

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Northwest PG Solutions

USA . 859 parts In-Stock

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$11.935

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$10.742

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859

$11.935

$10.742

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AZTECH Wire

Italy . 677 parts In-Stock

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$17.323

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Semicontronic

India . 689 parts In-Stock

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$322.000

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$313.950

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$312.340

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689

$322.000

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$312.340

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One Stop Electronics

USA . 684 parts In-Stock

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$787.000

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Lixinc

USA . 5,231 parts In-Stock

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Corphita

USA . 3,091 parts In-Stock

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Corohmni

South Africa . 300 parts In-Stock

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Overview

Upgrade your cellphone's performance with the CC2510F32RHH by Texas Instruments, a top-quality Cellphone IC that offers unmatched reliability and precision. Texas Instruments, a trusted industry leader known for their cutting-edge technology, has developed this versatile IC for seamless integration into a variety of applications. With its advanced features and efficient design, the CC2510F32RHH delivers superior performance and enhanced functionality, making it the ideal choice for customers looking to elevate their devices to the next level. Experience the difference today with the CC2510F32RHH and unlock a world of possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the IC, making it suitable for use in cellphones which may be subject to rough handling.

Surface Mount: YES

Surface mount technology allows for a more compact design and efficient assembly process.

Power Supplies (V): 2.5/3.3

The dual power supply options provide flexibility in voltage requirements for different cellphone applications.

No. of Terminals: 36

With a high number of terminals, this IC can support multiple functionalities within a cellphone.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The different package styles offer versatility in mounting options and thermal management for optimal performance.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows the IC to withstand varying environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the IC remains functional even in cold environments.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish provides excellent conductivity and corrosion resistance for reliable performance over time.

Terminal Position: QUAD

The quad terminal position allows for efficient signal routing and connection within the IC.

Technology: CMOS

CMOS technology offers low power consumption and high speed operation, ideal for cellphone applications.

Terminal Form: NO LEAD

The no lead terminal form aligns with environmental standards and regulations, making the product more sustainable.

Nominal Supply Voltage: 3 V

The 3V supply voltage is compatible with common power sources in cellphones, ensuring seamless integration.

Technical Specifications

Cellphone ICs CC2510F32RHH attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N36

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

CC2510F32RHH Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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