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CC2591RGVRG4

Texas Instruments

CC2591RGVRG4 by Texas Instruments

CC2591RGVRG4 by Texas Instruments is a cellphone IC with 16 terminals in a square package. It operates at temperatures from -40 to 85°C and has a supply voltage of 3V. This RF front end circuit has a max supply current of 4mA, making it ideal for industrial telecom applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 162,500 parts In-Stock

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Vyrian

USA . 2,899 parts In-Stock

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Digiode

USA . 1,772 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Parana Technologies

USA . 386 parts In-Stock

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$10.634

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$11.125

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386

$10.634

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ChromeModa Solutions

Germany . 4,248 parts In-Stock

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$11.948

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$9.797

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IDEA Electronic Components Group

UK . 2,013 parts In-Stock

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$11.948

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$11.351

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$10.753

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One Stop Electronics

USA . 693 parts In-Stock

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$12.000

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AZTECH Wire

Italy . 836 parts In-Stock

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$19.831

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Ampacity Inc.

Singapore . 273 parts In-Stock

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$577.000

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QUARKTWIN TECHNOLOGY LTD

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Perfect Parts

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Authorized Procurement Solutions

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Continental Prestige Electronics

USA . 2,705 parts In-Stock

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DigiPath Technology Company

USA . 1,069 parts In-Stock

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Metaverse IC Inc.

Canada . 270 parts In-Stock

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Corphita

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Bastille Electronics

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Argo Parts USA

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Overview

Enhance your cellphone's performance with the Texas Instruments CC2591RGVRG4. Known for its superior quality and reliability, Texas Instruments is a leading manufacturer in the industry. This RF front end circuit offers enhanced connectivity and signal strength, making it perfect for a wide range of applications. Experience the value and benefits of this high-quality product, designed to meet the demands of today's technology-driven world. Trust Texas Instruments to deliver top-notch solutions for all your cellphone IC needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is lightweight, durable, and cost-effective, making it ideal for a wide range of applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and reducing overall production costs.

Power Supplies (V): 3

Operating at a low voltage of 3V helps to conserve power and improve efficiency, making the product suitable for portable devices.

No. of Terminals: 16

Having 16 terminals allows for a higher level of connectivity and functionality, enabling more advanced features in the product.

Maximum Time At Peak Reflow Temperature (s): 30

The ability to withstand peak reflow temperatures for up to 30 seconds ensures reliable performance during the manufacturing process.

Telecom IC Type: RF FRONT END CIRCUIT

Being designed as an RF front end circuit specifically for telecommunications applications, this product offers excellent signal reception and transmission capabilities.

Nominal Supply Voltage: 3 V

Operating at a nominal supply voltage of 3V ensures compatibility with standard power sources and helps to optimize energy efficiency.

Technical Specifications

Cellphone ICs CC2591RGVRG4 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.16SQ,25

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Maximum Supply Current:

4 mA

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4 mm

Trade Compliance

CC2591RGVRG4 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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