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CC2510F32RSPR

Texas Instruments

CC2510F32RSPR by Texas Instruments

CC2510F32RSPR by Texas Instruments is a cellphone IC with 36 terminals in a square chip carrier package. It operates b/w -40 to 85°C, with a supply voltage of 2.5/3.3V and peak reflow temperature of 260°C. Ideal for RF and baseband circuits in industrial telecom applications due to its CMOS technology and low profile design.

Median Price

$2.760

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 32,893 parts In-Stock

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$2.760

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$2.700

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$2.650

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Vyrian

USA . 3,726 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,500 parts In-Stock

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Digiode

USA . 1,806 parts In-Stock

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Prism Electronics

USA . 36 parts In-Stock

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Sunrise Surplus Inc.

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PC Components Company LLC

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Bristol Electronics

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Distributors (Availability)

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Native Components

USA . 531 parts In-Stock

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$0.107

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$0.103

531

$0.107

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$0.103

Northwest PG Solutions

USA . 647 parts In-Stock

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$0.118

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$0.104

647

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AZTECH Wire

Italy . 535 parts In-Stock

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$9.064

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535

$9.064

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Parana Technologies

USA . 2,185 parts In-Stock

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$11.891

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$12.287

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DigiPath Technology Company

USA . 2,092 parts In-Stock

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$13.094

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$12.046

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ChromeModa Solutions

Germany . 6,147 parts In-Stock

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$13.361

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$10.956

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$13.361

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IDEA Electronic Components Group

UK . 2,325 parts In-Stock

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$13.361

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$12.693

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$12.025

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Component Stockers USA

USA . 708 parts In-Stock

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$99.990

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One Stop Electronics

USA . 1,230 parts In-Stock

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$344.000

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Kepictronics

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Lixinc

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Metaverse IC Inc.

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A-Z Elektronik GmbH

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QUARKTWIN TECHNOLOGY LTD

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Alle Elektronik GmbH

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Authorized Procurement Solutions

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Assy Fe

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Corphita

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Formix International (Excess)

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Perfect Parts

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Overview

Experience the cutting-edge technology of Texas Instruments with the CC2510F32RSPR Cellphone IC. Designed for optimal performance and reliability, this surface mount device offers a compact package shape and a wide range of applications in the telecommunications industry. With a focus on quality and innovation, Texas Instruments delivers unmatched value to customers seeking efficient and advanced solutions for their electronic devices. Upgrade your products today with the CC2510F32RSPR and stay ahead of the competition.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly of the product onto a PCB, saving space and reducing production costs.

Package Shape: SQUARE

The square shape of the package provides stability and uniformity in mounting the IC on the circuit board, ensuring a reliable connection.

Power Supplies (V): 2.5/3.3

Supporting multiple power supply options makes this IC versatile and compatible with a variety of systems, enhancing its usability.

No. of Terminals: 36

Having a high number of terminals allows for increased connectivity and functionality within the cellphone, enabling more features and capabilities.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of chip carrier, heat sink/slug, and very thin profile package styles offer efficient heat dissipation, space-saving design, and compatibility with slim devices.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can withstand demanding conditions and maintain performance under heat stress.

Minimum Operating Temperature: -40 °C

The wide range of operating temperature ensures reliability in extreme environments, making it suitable for various applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The use of high-quality terminal finish ensures stable electrical connections, corrosion resistance, and longevity of the IC.

Terminal Position: QUAD

The quad terminal position enables efficient signal transmission and reduces signal interference, enhancing the overall performance of the IC.

Maximum Seated Height: 0.9 mm

The low seated height allows for compact design and facilitates slim form factor integration in mobile devices.

Width: 6 mm

The compact width of the IC enables space-saving on the PCB, optimizing layout and design of the cellphone circuitry.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature prevents overheating during assembly, ensuring the integrity and reliability of the IC solder joints.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for proper soldering of the IC onto the PCB, ensuring a secure and durable connection.

Length: 6 mm

The compact length of the IC contributes to overall space efficiency and ease of integration into the cellphone design.

Temperature Grade: INDUSTRIAL

The industrial-grade temperature rating ensures reliable operation in harsh industrial environments, making it suitable for rugged applications.

Technology: CMOS

The CMOS technology offers low power consumption, high speed, and compatibility with digital circuits, enhancing the efficiency and performance of the IC.

Terminal Form: NO LEAD

The lead-free terminal form complies with environmental regulations, reducing environmental impact and ensuring safe disposal of the product.

Telecom IC Type: RF AND BASEBAND CIRCUIT

The integration of RF and baseband circuits in a single IC enables seamless communication and signal processing in cellular networks, improving overall connectivity and performance.

Nominal Supply Voltage: 3 V

The 3V nominal supply voltage is a common standard in cellphone electronics, ensuring compatibility and smooth operation in various mobile devices.

Terminal Pitch: 0.5 mm

The small terminal pitch allows for high-density mounting on the PCB, optimizing space usage and enabling complex circuitry in the cellphone.

Moisture Sensitivity Level (MSL): 3

The moisture sensitivity level of 3 indicates the IC can withstand moderate exposure to moisture during handling and assembly processes, ensuring long-term reliability.

Technical Specifications

Cellphone ICs CC2510F32RSPR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N36

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

CC2510F32RSPR Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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