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CC2510F16RHH

Texas Instruments

CC2510F16RHH by Texas Instruments

CC2510F16RHH by Texas Instruments is a cellphone IC with 36 terminals in a square chip carrier package. It operates b/w -40 to 85°C, with a supply voltage of 2.5/3.3V and peak reflow temperature of 260°C. Ideal for RF and baseband circuits in industrial telecom applications due to its CMOS technology and compact size.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,627 parts In-Stock

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8,627

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Digiode

USA . 434 parts In-Stock

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434

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 258 parts In-Stock

1+ parts

$0.463

100+ parts

-

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$0.445

258

$0.463

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-

$0.445

Northwest PG Solutions

USA . 2,025 parts In-Stock

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$0.510

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-

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$0.449

2,025

$0.510

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$0.449

Parana Technologies

USA . 474 parts In-Stock

1+ parts

$13.981

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-

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$14.452

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474

$13.981

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$14.452

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DigiPath Technology Company

USA . 1,791 parts In-Stock

1+ parts

$15.395

100+ parts

$14.163

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1,791

$15.395

$14.163

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ChromeModa Solutions

Germany . 6,823 parts In-Stock

1+ parts

$15.709

100+ parts

$12.881

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6,823

$15.709

$12.881

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IDEA Electronic Components Group

UK . 1,940 parts In-Stock

1+ parts

$15.709

100+ parts

$14.924

1k+ parts

$14.138

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1,940

$15.709

$14.924

$14.138

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AZTECH Wire

Italy . 647 parts In-Stock

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$18.609

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647

$18.609

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One Stop Electronics

USA . 374 parts In-Stock

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$245.000

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374

$245.000

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Corphita

USA . 3,592 parts In-Stock

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3,592

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Overview

Elevate your cellphone's performance with the CC2510F16RHH by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers cutting-edge technology in the form of this RF and baseband circuit IC. Designed for industrial-grade applications, this chip carrier offers a very thin profile and impressive features like a nominal supply voltage of 3V and a wide temperature range. With Texas Instruments at the helm, you can trust that your cellphone will operate seamlessly, giving you the ultimate user experience. Upgrade your device today with the CC2510F16RHH and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides a lightweight and durable housing for the cellphone IC, making it suitable for portable electronic devices.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and reducing costs in production.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this cellphone IC can reliably handle demanding usage conditions without overheating.

Technology: CMOS

The CMOS technology used in this IC offers low power consumption and high noise immunity, contributing to energy efficiency and robust performance.

Nominal Supply Voltage: 3V

The 3V nominal supply voltage ensures compatibility with common power sources, simplifying integration into various electronic devices.

Technical Specifications

Cellphone ICs CC2510F16RHH attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N36

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

CC2510F16RHH Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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