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CC2510F32RSPRG3

Texas Instruments

CC2510F32RSPRG3 by Texas Instruments

CC2510F32RSPRG3 by Texas Instruments is a cellphone IC with 36 terminals in a square chip carrier package. It operates b/w -40 to 85°C, with a supply voltage of 2.5/3.3V and peak reflow temperature of 260°C. Ideal for RF and baseband circuits in industrial telecom applications due to its CMOS technology and compact size.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,367 parts In-Stock

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Digiode

USA . 3,456 parts In-Stock

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Parana Technologies

USA . 507 parts In-Stock

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$5.975

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$6.753

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507

$5.975

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$6.753

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ChromeModa Solutions

Germany . 4,550 parts In-Stock

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$6.713

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$5.505

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$6.713

$5.505

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IDEA Electronic Components Group

UK . 2,077 parts In-Stock

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$6.713

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$6.042

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$6.713

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$6.042

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AZTECH Wire

Italy . 395 parts In-Stock

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$17.298

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Native Components

USA . 229 parts In-Stock

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$49.720

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$47.731

229

$49.720

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$47.731

Northwest PG Solutions

USA . 1,858 parts In-Stock

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$54.692

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Ampacity Inc.

Singapore . 639 parts In-Stock

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$340.000

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Semicontronic

India . 568 parts In-Stock

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$870.000

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$848.250

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$843.900

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568

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One Stop Electronics

USA . 911 parts In-Stock

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$968.000

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911

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Corphita

USA . 1,746 parts In-Stock

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DigiPath Technology Company

USA . 173 parts In-Stock

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$6.052

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Corohmni

South Africa . 98 parts In-Stock

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Overview

Elevate your cellphone technology with the CC2510F32RSPRG3 from Texas Instruments - a high-quality Cellphone IC that promises top-notch performance and reliability. Designed with precision and expertise, this product boasts cutting-edge features that cater to the demands of modern communication devices. Whether you're looking to enhance connectivity or improve efficiency, this IC has got you covered. Trust in Texas Instruments to deliver excellence in every aspect, ensuring that you stay ahead of the curve in the fast-paced world of technology. Experience the difference with the CC2510F32RSPRG3 - where innovation meets value.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly on PCBs, making this IC a convenient choice for manufacturers.

Package Shape: SQUARE

The square package shape saves space on PCBs and allows for efficient layout design, making this IC ideal for compact devices.

Power Supplies (V): 2.5/3.3

Support for multiple power supplies gives flexibility in design and compatibility with different voltage requirements in cellphones.

No. of Terminals: 36

With a high number of terminals, this IC offers more connectivity options and functionality for cellphone applications.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The various package styles offer versatility in thermal management and form factor options for cellphone designs.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature range ensures reliability and performance in different environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature range allows for use in extreme cold environments without compromising functionality.

Terminal Finish: NICKEL PALLADIUM GOLD

The terminal finish provides excellent conductivity and corrosion resistance for reliable connections in cellphone circuits.

Terminal Position: QUAD

The quad terminal position offers increased stability and secure connections when soldered onto PCBs.

Maximum Seated Height: 0.9 mm

The low maximum seated height allows for slim and compact cellphone designs while ensuring proper clearance on the PCB.

Width: 6 mm

The small width dimension saves space on the PCB and contributes to a more compact overall design for cellphones.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature ensures quick and efficient soldering during manufacturing processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability allows for reliable soldering connections during the assembly process.

Length: 6 mm

The compact length dimension contributes to space-saving design considerations for cellphone PCB layouts.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable performance in harsh operating conditions commonly encountered in cellphone usage.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor (CMOS) technology offers low power consumption and high speed, making this IC energy-efficient and fast for cellphone applications.

Terminal Form: NO LEAD

The no-lead terminal form is environmentally friendly and compliant with RoHS regulations for reducing hazardous substances in electronics.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Support for both RF and baseband circuit integration in a single IC simplifies design complexity and optimizes performance for cellular communication.

Nominal Supply Voltage: 3 V

The 3V nominal supply voltage aligns with common voltage requirements in cellphone circuits, ensuring compatibility and stable operation.

Terminal Pitch: 0.5 mm

The small terminal pitch enables high-density integration and efficient routing of signals on the PCB, enhancing overall performance and functionality.

Moisture Sensitivity Level (MSL): 3

Moisture sensitivity level 3 indicates moderate sensitivity to moisture exposure, prompting proper handling and storage to maintain product quality.

Technical Specifications

Cellphone ICs CC2510F32RSPRG3 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N36

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

CC2510F32RSPRG3 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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