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AFE7989IABJ

Texas Instruments

AFE7989IABJ by Texas Instruments

AFE7989IABJ by Texas Instruments is a Cellphone IC with 400 terminals in a GRID ARRAY, FINE PITCH package. It operates b/w -40 to 85°C and features RF AND BASEBAND CIRCUIT for telecom applications. The package is made of PLASTIC/EPOXY, measures 17x17 mm, and has a terminal pitch of 0.8 mm.

Median Price

$1,565.300

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 123,312 parts In-Stock

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Digiode

USA . 4,815 parts In-Stock

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$1,487.035

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Vyrian

USA . 4,580 parts In-Stock

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4,580

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EPE Components Inc.

USA . 63 parts In-Stock

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Bristol Electronics

USA . 63 parts In-Stock

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Advanced Electronics

New Zealand . 83 parts In-Stock

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$10.428

100+ parts

$9.489

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$8.551

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83

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Parana Technologies

USA . 922 parts In-Stock

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$12.251

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$12.674

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922

$12.251

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$12.674

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Corohmni

South Africa . 687 parts In-Stock

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$12.402

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ChromeModa Solutions

Germany . 3,260 parts In-Stock

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$13.765

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$11.287

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IDEA Electronic Components Group

UK . 599 parts In-Stock

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$13.765

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$13.077

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$12.388

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AZTECH Wire

Italy . 436 parts In-Stock

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$18.920

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Corphita

USA . 1,928 parts In-Stock

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DigiPath Technology Company

USA . 1,827 parts In-Stock

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$12.411

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Northwest PG Solutions

USA . 1,791 parts In-Stock

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Native Components

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Overview

Experience the innovation and reliability of Texas Instruments with the AFE7989IABJ Cellphone IC. This state-of-the-art component boasts high-quality construction and a range of applications in telecom devices. With a grid array package and fine pitch style, this IC offers superior performance in a compact design. Trust in Texas Instruments for cutting-edge technology that delivers value and efficiency to customers in the ever-evolving world of telecommunications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body makes the product lightweight and durable, ideal for portable electronic devices like cellphones.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly of the IC onto the circuit board, saving time and effort in manufacturing.

Package Shape: SQUARE

The square package shape provides a compact design, saving space on the circuit board and enabling higher component density for enhanced functionality.

No. of Terminals: 400

The large number of terminals allows for greater connectivity options and capabilities, enabling the IC to support complex cellphone functions.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the IC can withstand demanding operating conditions in cellphone applications without overheating or performance degradation.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the IC can function reliably in a wide range of environmental conditions, making it versatile for various cellphone usage scenarios.

Terminal Finish: TIN SILVER COPPER

The tin, silver, and copper terminal finish provides excellent conductivity and corrosion resistance, maintaining signal integrity and reliability in the long term.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and routing, enhancing signal integrity and reducing interference for optimal performance.

Maximum Seated Height: 2.65 mm

The low maximum seated height allows for a slim and compact overall profile, suitable for slim cellphone designs without compromising on performance.

Width: 17 mm

The compact width of the IC enables space-efficient integration into the cellphone's PCB layout, enabling sleek and modern device designs.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature ensures proper soldering and thermal stability during manufacturing processes, preventing damage to the IC.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows for reliable soldering during assembly, ensuring strong mechanical bonds and electrical connections for robust performance.

Length: 17 mm

The compact length of the IC contributes to a space-efficient design, enabling versatile placement within the cellphone's circuitry for optimized performance.

Temperature Grade: INDUSTRIAL

The industrial temperature grade certification confirms the IC's reliability and durability in harsh operating environments, making it suitable for demanding cellphone applications.

Terminal Form: BALL

The ball terminal form facilitates easy and secure mounting onto the PCB, ensuring stable electrical connections and efficient assembly during manufacturing.

Telecom IC Type: RF AND BASEBAND CIRCUIT

The RF and baseband circuitry type of the IC indicates its specialization in handling telecommunications functions, making it a reliable choice for advanced cellphone communication capabilities.

Terminal Pitch: 0.8 mm

The fine terminal pitch allows for high-density mounting of the IC on the PCB, enabling advanced functionality and performance in modern cellphone designs.

Moisture Sensitivity Level (MSL): 3

The moisture sensitivity level of 3 indicates the IC's robustness against moisture and humidity, ensuring long-term reliability and performance in cellphone applications.

Technical Specifications

Cellphone ICs AFE7989IABJ attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

Additional Features:

RF frequency(Min)(MHz) is 600; RF frequency(Max)(MHz) is 6000

JESD-30 Code:

S-PBGA-B400

JESD-609 Code:

e1

Length:

17 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

400

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA400,20X20,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

2.65 mm

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

17 mm

Trade Compliance

AFE7989IABJ Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.B

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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