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CC1110F16RSP

Texas Instruments

CC1110F16RSP by Texas Instruments

The Texas Instruments CC1110F16RSP is a cellphone IC with 36 terminals in a square chip carrier package. It operates b/w -40 to 85°C, with a supply voltage of 3V. This RF and baseband circuit has a terminal pitch of 0.5mm and is suitable for industrial applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,731 parts In-Stock

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Digiode

USA . 4,446 parts In-Stock

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Euro-Tech

UK . 440 parts In-Stock

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440

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Zilex Electronics Inc.

Canada . 332 parts In-Stock

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332

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Component Sense

UK . 79 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 949 parts In-Stock

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$0.344

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$0.330

949

$0.344

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$0.330

Northwest PG Solutions

USA . 559 parts In-Stock

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$0.378

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$0.333

559

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$0.333

Parana Technologies

USA . 1,870 parts In-Stock

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$9.315

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$9.940

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1,870

$9.315

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$9.940

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AZTECH Wire

Italy . 591 parts In-Stock

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$9.847

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591

$9.847

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ChromeModa Solutions

Germany . 2,673 parts In-Stock

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$10.466

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$8.582

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2,673

$10.466

$8.582

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IDEA Electronic Components Group

UK . 846 parts In-Stock

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$10.466

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$9.943

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$9.419

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846

$10.466

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One Stop Electronics

USA . 518 parts In-Stock

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$828.000

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518

$828.000

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Corphita

USA . 2,947 parts In-Stock

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DigiPath Technology Company

USA . 1,583 parts In-Stock

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$9.436

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$9.436

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Overview

Experience seamless connectivity and superior performance with the Texas Instruments CC1110F16RSP cellphone IC. Known for their high-quality products, Texas Instruments delivers unmatched reliability and innovation in the telecommunications industry. Whether you're designing cutting-edge smartphones or optimizing network infrastructure, this surface mount IC offers unparalleled value and efficiency. Stay ahead of the competition and unlock endless possibilities with the CC1110F16RSP by Texas Instruments.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, making it a convenient choice for manufacturers.

Package Shape: SQUARE

Square package shape helps in optimizing space utilization on the PCB and ensures a compact design for the product.

Power Supplies (V): 3

Operating at a voltage of 3V allows for compatibility with a wide range of devices and power sources.

No. of Terminals: 36

More terminals allow for greater connectivity options and functionality within the cellphone IC.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the cellphone IC can withstand demanding conditions without affecting performance.

Minimum Operating Temperature: -40 °C

The wide range of minimum operating temperature ensures the cellphone IC can function reliably in various environments.

Terminal Finish: NICKEL PALLADIUM GOLD

This terminal finish provides excellent conductivity, corrosion resistance, and durability for long-term use of the product.

Terminal Position: QUAD

Quad terminal position offers enhanced stability and efficient signal transmission in the cellphone IC.

Width: 6 mm

Compact width allows for space-efficient integration into the overall design of the cellphone IC.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures proper soldering and assembly of the cellphone IC during manufacturing processes.

Technology: CMOS

CMOS technology provides low power consumption, high speed, and reliable performance for the cellphone IC.

Terminal Form: NO LEAD

Lead-free terminal form complies with environmental regulations and ensures the product's safety and sustainability.

Nominal Supply Voltage: 3 V

The nominal supply voltage of 3V ensures efficient power consumption and compatibility with various electronic systems.

Technical Specifications

Cellphone ICs CC1110F16RSP attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N36

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

CC1110F16RSP Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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