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TRF371109IRGZR

Texas Instruments

TRF371109IRGZR by Texas Instruments

TRF371109IRGZR by Texas Instruments is a cellphone IC with 48 terminals, operating at -40 to 85°C. It features a 5V supply voltage, RF and baseband circuit for telecom applications. The chip carrier package has a square shape, measures 7x7mm in size, and is surface mountable.

Median Price

$21.329

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 25,815 parts In-Stock

1+ parts

$21.329

100+ parts

$18.631

1k+ parts

$12.849

10k+ parts

-

25,815

$21.329

$18.631

$12.849

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,407 parts In-Stock

1+ parts

$20.263

100+ parts

-

1k+ parts

-

10k+ parts

-

1,407

$20.263

-

-

-

Vyrian

USA . 3,774 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,774

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 725 parts In-Stock

1+ parts

$14.440

100+ parts

-

1k+ parts

-

10k+ parts

-

725

$14.440

-

-

-

Parana Technologies

USA . 1,522 parts In-Stock

1+ parts

$15.570

100+ parts

-

1k+ parts

$15.943

10k+ parts

-

1,522

$15.570

-

$15.943

-

DigiPath Technology Company

USA . 1,007 parts In-Stock

1+ parts

$17.144

100+ parts

$15.773

1k+ parts

-

10k+ parts

-

1,007

$17.144

$15.773

-

-

IDEA Electronic Components Group

UK . 803 parts In-Stock

1+ parts

$17.494

100+ parts

$16.619

1k+ parts

$15.745

10k+ parts

-

803

$17.494

$16.619

$15.745

-

ChromeModa Solutions

Germany . 66 parts In-Stock

1+ parts

$17.494

100+ parts

$14.345

1k+ parts

-

10k+ parts

-

66

$17.494

$14.345

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-

Corphita

USA . 4,597 parts In-Stock

1+ parts

$19.196

100+ parts

-

1k+ parts

-

10k+ parts

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4,597

$19.196

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-

-

Overview

Elevate your cellphone's performance with the TRF371109IRGZR by Texas Instruments, a top-quality RF and baseband circuit that guarantees seamless communication. With a reputation for excellence, Texas Instruments delivers cutting-edge technology in a compact square package for easy installation. Perfect for various telecommunications applications, this cellphone IC ensures reliability and efficiency, making it a must-have for tech-savvy individuals looking for superior connectivity. Upgrade your device today and experience the unmatched value and benefits that Texas Instruments brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used in electronic components due to its durability and ability to protect the internal circuitry.

Surface Mount: YES

Surface mount technology allows for compact and efficient placement of components on circuit boards, saving space and improving reliability.

Power Supplies (V): 5

This voltage is commonly used in cellphone ICs, providing the necessary power for efficient operation.

No. of Terminals: 48

Having a high number of terminals allows for more connections and functionalities within the IC.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures the IC can perform reliably in various environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the IC to function in cold environments without issues.

Telecom IC Type: RF AND BASEBAND CIRCUIT

Being designed for RF and baseband circuit applications, this IC can support wireless communication functions efficiently.

Technical Specifications

Cellphone ICs TRF371109IRGZR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N48

JESD-609 Code:

e4

Length:

7 mm

Moisture Sensitivity Level (MSL):

2

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD SILVER

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Trade Compliance

TRF371109IRGZR Telecommunications trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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