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AFE8030EDIABJ

Texas Instruments

AFE8030EDIABJ by Texas Instruments

AFE8030EDIABJ by Texas Instruments is a cellphone IC with 400 terminals in a square grid array package. It operates b/w -40 to 85°C, with terminal finish of Tin Silver Copper. This RF and baseband circuit has a compact size of 17x17mm for telecom applications.

Median Price

$2,936.000

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 1,416 parts In-Stock

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$2,936.000

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1,416

$2,936.000

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Distributors (In-Stock)

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Digiode

USA . 1,645 parts In-Stock

1+ parts

$2,789.200

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-

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1,645

$2,789.200

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Vyrian

USA . 5,472 parts In-Stock

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5,472

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VNN

France . 2,903 parts In-Stock

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2,903

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Nova Conductors

Japan . 45 parts In-Stock

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45

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Distributors (Availability)

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Corohmni

South Africa . 796 parts In-Stock

1+ parts

$6.969

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-

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796

$6.969

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AZTECH Wire

Italy . 696 parts In-Stock

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$12.420

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696

$12.420

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Parana Technologies

USA . 2,003 parts In-Stock

1+ parts

$15.982

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$16.325

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2,003

$15.982

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$16.325

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DigiPath Technology Company

USA . 2,167 parts In-Stock

1+ parts

$17.598

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2,167

$17.598

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ChromeModa Solutions

Germany . 4,651 parts In-Stock

1+ parts

$17.957

100+ parts

$14.725

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4,651

$17.957

$14.725

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IDEA Electronic Components Group

UK . 434 parts In-Stock

1+ parts

$17.957

100+ parts

$17.059

1k+ parts

$16.161

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434

$17.957

$17.059

$16.161

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Ampacity Inc.

Singapore . 1,021 parts In-Stock

1+ parts

$2,495.600

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1,021

$2,495.600

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Semicontronic

India . 968 parts In-Stock

1+ parts

$2,495.600

100+ parts

$2,433.210

1k+ parts

$2,420.732

10k+ parts

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968

$2,495.600

$2,433.210

$2,420.732

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Corphita

USA . 3,802 parts In-Stock

1+ parts

$2,642.400

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3,802

$2,642.400

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Continental Prestige Electronics

USA . 6,632 parts In-Stock

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6,632

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Argo Parts USA

USA . 4,869 parts In-Stock

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4,869

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Bastille Electronics

Australia . 98 parts In-Stock

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98

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Overview

Experience the superior quality and reliability of Texas Instruments with the AFE8030EDIABJ, a cutting-edge cellphone IC designed to enhance performance and functionality. This innovative product boasts advanced technology and precision engineering, offering customers unmatched value and benefits. Perfect for telecom applications requiring RF and baseband circuitry, this IC's grid array package style and fine pitch make it ideal for various mobile devices. Trust Texas Instruments for top-notch solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection to the internal components of the IC, ensuring a longer lifespan for the product.

Surface Mount: YES

Being surface mount compatible makes the IC easier to integrate onto circuit boards, saving space and simplifying the overall design of electronic devices.

Package Shape: SQUARE

The square package shape allows for efficient use of space on the circuit board, enabling a compact design for the overall product.

No. of Terminals: 400

With a high number of terminals, this IC can support complex functions and connectivity options, making it suitable for advanced cellphone applications.

Package Style (Meter): GRID ARRAY, FINE PITCH

The grid array fine pitch package style offers precise terminal placement and high density, enabling high-speed performance and reliability for the cellphone IC.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures that the IC can withstand extended use under various environmental conditions, making it ideal for cellphone applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the IC to function in cold environments without any performance issues, enhancing the versatility of the product.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin, silver, and copper provides excellent conductivity and corrosion resistance, enhancing the overall reliability and performance of the IC.

Terminal Position: BOTTOM

The bottom terminal position simplifies the soldering process and ensures a secure connection to the circuit board, contributing to the overall durability of the product.

Maximum Seated Height: 2.65 mm

The low maximum seated height allows for a slim profile design, making the cellphone IC suitable for compact devices without compromising on performance.

Width: 17 mm

The compact width of the IC enables space-efficient placement on the circuit board, facilitating a streamlined design for the overall cellphone product.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, the IC can withstand the soldering process without any damage, ensuring reliable performance during manufacturing.

Length: 17 mm

The 17 mm length offers a balanced form factor for the IC, allowing for easy integration into various cellphone designs without compromising on functionality.

Terminal Form: BALL

The ball terminal form ensures a secure connection and improves thermal conductivity, contributing to the overall performance and reliability of the cellphone IC.

Telecom IC Type: RF AND BASEBAND CIRCUIT

The RF and baseband circuit type makes this IC suitable for handling wireless communications and data processing in cellphones, offering comprehensive functionality for modern mobile devices.

Terminal Pitch: 0.8 mm

The 0.8 mm terminal pitch provides precise spacing for terminals, enabling high-speed data transfer and signal integrity, essential for optimal cellphone performance.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, the IC can withstand exposure to moderate levels of moisture without any degradation in performance, ensuring long-term reliability in cellphone applications.

Technical Specifications

Cellphone ICs AFE8030EDIABJ attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

Additional Features:

RF frequency(Min)(MHz) : 600; RF frequency(Max)(MHz) : 5500

JESD-30 Code:

S-PBGA-B400

JESD-609 Code:

e1

Length:

17 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

400

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA400,20X20,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

2.65 mm

Surface Mount:

YES

Telecom IC Type:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

17 mm

Trade Compliance

AFE8030EDIABJ Telecommunications trade compliance attributes, and parameters.

ECCN

5A991.B

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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