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CC2511F16RSPRG3

Texas Instruments

CC2511F16RSPRG3 by Texas Instruments

CC2511F16RSPRG3 by Texas Instruments is a cellphone IC with 36 terminals in a square package. It operates at temperatures ranging from -40 to 85°C and has a supply voltage of 3V. This RF and baseband circuit technology features a very thin profile, making it ideal for industrial telecom applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,107 parts In-Stock

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6,107

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Digiode

USA . 3,939 parts In-Stock

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3,939

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Distributors (Availability)

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Native Components

USA . 244 parts In-Stock

1+ parts

$0.407

100+ parts

-

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$0.391

244

$0.407

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$0.391

Northwest PG Solutions

USA . 130 parts In-Stock

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$0.448

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-

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$0.395

130

$0.448

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$0.395

Parana Technologies

USA . 2,288 parts In-Stock

1+ parts

$11.243

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$11.679

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2,288

$11.243

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$11.679

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DigiPath Technology Company

USA . 1,511 parts In-Stock

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$12.380

100+ parts

$11.390

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1,511

$12.380

$11.390

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ChromeModa Solutions

Germany . 3,694 parts In-Stock

1+ parts

$12.633

100+ parts

$10.359

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3,694

$12.633

$10.359

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IDEA Electronic Components Group

UK . 1,329 parts In-Stock

1+ parts

$12.633

100+ parts

$12.001

1k+ parts

$11.370

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1,329

$12.633

$12.001

$11.370

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AZTECH Wire

Italy . 637 parts In-Stock

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$18.807

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637

$18.807

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Semicontronic

India . 676 parts In-Stock

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$33.000

100+ parts

$32.175

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$32.010

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676

$33.000

$32.175

$32.010

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One Stop Electronics

USA . 843 parts In-Stock

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$496.000

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843

$496.000

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Ampacity Inc.

Singapore . 657 parts In-Stock

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$873.000

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657

$873.000

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Corphita

USA . 3,910 parts In-Stock

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Corohmni

South Africa . 159 parts In-Stock

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159

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Overview

Experience top-notch quality and reliability with the CC2511F16RSPRG3 by Texas Instruments, a leading manufacturer in the industry. This cellphone IC offers unparalleled performance and efficiency, making it an ideal choice for a wide range of applications. From enhancing connectivity to optimizing power management, this product delivers exceptional value to customers seeking cutting-edge technology. Elevate your designs with the advantages and benefits that come with choosing Texas Instruments for all your integrated circuit needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protects the internal components of the cellphone IC, ensuring a longer lifespan.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation of the IC onto PCBs, saving time and reducing production costs.

Power Supplies (V): 3

Operating at a voltage of 3V makes the IC compatible with a wide range of devices and power sources.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, the IC can withstand high temperatures, making it suitable for industrial applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish ensures good conductivity, corrosion resistance, and reliable connections for the IC.

Technology: CMOS

Using CMOS technology in the IC offers low power consumption, high noise immunity, and faster operation speeds, making it an efficient choice.

Technical Specifications

Cellphone ICs CC2511F16RSPRG3 attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N36

JESD-609 Code:

e4

Length:

6 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

36

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC36,.25SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

.9 mm

Sub-Category:

Other Telecom ICs

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Technology:

CMOS

Telecom IC Type:

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

CC2511F16RSPRG3 Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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